FMMT415 FMMT417 TYPICAL CHARACTERISTICS 180 160 80 30 100 3. 20 40 0 0 20 40 60 0 80 100 120 140 160 180 -60 -40 -20 0 Maximum Avalanche Current v Pulse Width IUSB v Temperature for the specified conditions 100 220 80 200 VCE =10V - (V) 175°C 60 Risetime of Base Drive Current = 5mA/ns 180 20 -55°C 100µA 1mA V h 25°C 100mA IB =100mA IB =200mA 1n Collector-Emitter Capacitance (F) hFE v IC Minimum starting voltage as a function of capacitance 175 170 IB =100mA 165 IB =200mA 1 100n Risetime of Base Drive (mA/ns) UNIT 320 V Collector-Emitter Voltage VCEO 100 100 V Emitter-Base Voltage VEBO 6 V Continuous Collector Current IC 500 mA Peak Collector Current (Pulse Width=20ns) ICM 60 A Power Dissipation Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C Collector-Base Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. FMMT415 V(BR)CES 260 V FMMT417 320 V IC=1mA 100 V IC=100µA Collector-Emitter Breakdown Voltage VCEO(sus) Emitter-Base Breakdown Voltage V(BR)EBO IE=10µA µA µA 160 Emitter Cut-Off Current IEBO 0.1 µA VEB=4V VCE(sat) 0.5 V IC=10mA, IB=1mA* 150 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=10mA, IB=1mA* Current in Second Breakdown (Pulsed) ISB 15 25 A A VC=200V, CCE=620pF VC=250V, CCE=620pF Static Forward Current Transfer Ratio hFE 25 Transition Frequency fT 40 Collector-Base Capacitance Ccb 140 C = 620pF 20 40 60 80 100 120 140 160 180 6 IC=1mA Tamb= -55 to +150°C VCB=180V VCB=180V, Tamb=100°C Minimum starting voltage as a function of temperature 3 - 105 FMMT417 260 V Temperature (°C) Minimum starting voltage as a function of drive current FMMT415 VCBO 0.1 10 100 -60 -40 -20 0 10 SYMBOL Collector-Base Voltage ICBO 120 C=620pF 150 SOT23 Collector Cut-Off Current V 160 - (V) IB =60mA 155 10n Collector Current 180 145 IB =50mA 100 100p 1A B PARAMETER PARAMETER 140 120 10mA E C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 160 40 0 - (V) 20 40 60 80 100 120 140 160 180 Temperature (°C) Pulse Width (ns) ISSUE 4 - OCTOBER 1995 ✪ FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators PARTMARKING DETAIL FMMT415 415 FMMT417 417 ABSOLUTE MAXIMUM RATINGS. 10 1. 20 VC = 200V I 2. 60 V VC = 250V - (A) - (A) I 140 120 40 1. >4x1011Operations Without Failure 2. 107 Operations To Failure 3. 103 Operations To Failure FMMT415 FMMT417 SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR IC=10mA, VCE=10V* 8 MHz IC=10mA, VCE=20V f=20MHz pF VCB=20V, IE=0 f=100MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 104 FMMT415 FMMT417 TYPICAL CHARACTERISTICS 180 160 80 30 100 3. 20 40 0 0 20 40 60 0 80 100 120 140 160 180 -60 -40 -20 0 Maximum Avalanche Current v Pulse Width IUSB v Temperature for the specified conditions 100 220 80 200 VCE =10V - (V) 175°C 60 Risetime of Base Drive Current = 5mA/ns 180 20 -55°C 100µA 1mA V h 25°C 100mA IB =100mA IB =200mA 1n Collector-Emitter Capacitance (F) hFE v IC Minimum starting voltage as a function of capacitance 175 170 IB =100mA 165 IB =200mA 1 100n Risetime of Base Drive (mA/ns) UNIT 320 V Collector-Emitter Voltage VCEO 100 100 V Emitter-Base Voltage VEBO 6 V Continuous Collector Current IC 500 mA Peak Collector Current (Pulse Width=20ns) ICM 60 A Power Dissipation Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C Collector-Base Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. FMMT415 V(BR)CES 260 V FMMT417 320 V IC=1mA 100 V IC=100µA Collector-Emitter Breakdown Voltage VCEO(sus) Emitter-Base Breakdown Voltage V(BR)EBO IE=10µA µA µA 160 Emitter Cut-Off Current IEBO 0.1 µA VEB=4V VCE(sat) 0.5 V IC=10mA, IB=1mA* 150 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=10mA, IB=1mA* Current in Second Breakdown (Pulsed) ISB 15 25 A A VC=200V, CCE=620pF VC=250V, CCE=620pF Static Forward Current Transfer Ratio hFE 25 Transition Frequency fT 40 Collector-Base Capacitance Ccb 140 C = 620pF 20 40 60 80 100 120 140 160 180 6 IC=1mA Tamb= -55 to +150°C VCB=180V VCB=180V, Tamb=100°C Minimum starting voltage as a function of temperature 3 - 105 FMMT417 260 V Temperature (°C) Minimum starting voltage as a function of drive current FMMT415 VCBO 0.1 10 100 -60 -40 -20 0 10 SYMBOL Collector-Base Voltage ICBO 120 C=620pF 150 SOT23 Collector Cut-Off Current V 160 - (V) IB =60mA 155 10n Collector Current 180 145 IB =50mA 100 100p 1A B PARAMETER PARAMETER 140 120 10mA E C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 160 40 0 - (V) 20 40 60 80 100 120 140 160 180 Temperature (°C) Pulse Width (ns) ISSUE 4 - OCTOBER 1995 ✪ FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators PARTMARKING DETAIL FMMT415 415 FMMT417 417 ABSOLUTE MAXIMUM RATINGS. 10 1. 20 VC = 200V I 2. 60 V VC = 250V - (A) - (A) I 140 120 40 1. >4x1011Operations Without Failure 2. 107 Operations To Failure 3. 103 Operations To Failure FMMT415 FMMT417 SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR IC=10mA, VCE=10V* 8 MHz IC=10mA, VCE=20V f=20MHz pF VCB=20V, IE=0 f=100MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 104