NJSEMI LS313 Monolithic dual npn transistor Datasheet

, One,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
LS310-LS313
MONOLITHIC DUAL NPN TRANSISTORS
FEATURES
VERY HIGH GAIN
hFEa200@10uA-1mA
TIGHT VBE MATCHING
|VBEi-VBEi| = 0.2mVTYP.
TO71 & TO78
250MHz TYP.@ 1mA
HIGH fT
ABSOLUTE MAXIMUM RATINGS NOTE 1@ 25°C (unless otherwise noted)
E2/(D
Collector
Current
Ic
10mA
B2
Maximum Temperatures
-55°to+150°C
Operating Junction Temperature
-55°to+150°C
ONE SIDE BOTH SIDES
250mW
500mW
2.3mW/'C
4.3mW/°C
Device Dissipation (g Free Air
Linear Derating Factor
B1
C2\(Z
Storage Temperature
Maximum Power Dissipation
©\E1
D/C1
TOP VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS310 LS311 LS312 LS313
UNITS
CONDITIONS
BVceo
Col lector to Base Voltage
25
45
60
45
MIN.
V
lc = 10uA, IE = 0
BVCEO
Collector to Emitter Voltage
Emitter-Base Breakdown
Voltage
Collector to Collector Voltage
25
45
60
45
WIN.
V
Ic = 1mA, IB = 0
6.0
6.0
6.0
6.0
MIN.
V
lE = 10uA, lc = 0
45
45
60
45
400
1000
400
MIN.
V
lc = 10uA, I E = IB = OA
BVEBO
BVcco
HFE
DC Current Gain
150
150
200
hFE
DC Current Gain
150
150
200
hFE
VcE(SAT)
I CEO
IEBO
COBO
CciC2
ldC2
fr
NF
MIN.
MAX.
MIN.
NOTE 2
lc = 10uA, VCE- 5V
lc = 100uA, VCE = 5V
DC Current Gain
150
150
200
400
MIN,
Collector Saturation Voltage
0.25
0.25
0.25
0.25
MAX.
V
Ic = 1mA, IB = 0.1mA
Collector Cutoff Current
0.2
0.2
0.2
0.2
MAX.
nA
IE = 0, VCB = NOTE 3
Emitter Cutoff Current
0.2
0.2
0.2
0.2
MAX.
nA
Ic = 0, VCB = 3V
Out put Capacitance
Collector to Collector
Capacitance
Collector to Collector Leakage
Current
Current Gain Bandwidth
Product
2
2
2
2
MAX.
PF
IE = 0, VCB = 5V
2
2
2
2
MAX.
PF
Vcc = 0V
1.0
1.0
1.0
1.0
MAX
uA
Vcc= NOTE 4
200
200
200
200
MIN.
MHz
3
3
3
3
MAX.
dB
Narrow Band Noise Figure
Ic = 1 mA, VCE = 5V
lc = 1mA, VCE = 5V
lc = 100uA, VCE = 5V
BW = 200Hz, RG = 10Kn
F=1KHz
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTICS
LS310 LS311 LS312 LS313
|VeE1-VBE2|
Base Emitter Voltage Differential
A|(vBE1-vBE2)|/°c
Base Emitter Voltage Differential
Change with Temperature
[IB1-IB2|
|A(! B 1-lB2)|/°C
hFE1/hFE2
1
3
2
15
Base Current Differential
Base Current Differential
Change with Temperature
10
Current Gain Differential
TO-71
Six Lead
0209
t
0210
0.030
MAX
6 LEADS
0170
M « -J o.SOO WIN
0019 OIA n nn
0 016
UUU. . T
0.100
4
>
^t• 0.050
•15:
0046 '
0.036
0048
0028
0.4
1
1
5
0.2
0.5
0.5
2
10
0.5
5
MINI. UNITS
rnV
mV
uV/°C
5
0.3
0.4
1
1
5
1.25
5
0.5
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
MAX.
nA
nA
nATC
5
5
TYP.
%
TO-78
CONDITIONS
lc= lOpA, VCE = 5V
lc= 10uA, VCE = 5V
TA = -55°Cto+125°C
lc= 10|JA, VCE = 5V
lc= 10nA, VCE = 5V
TA = -55°Cto+125°C
lc = 10^A, VCE = 5V
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