Fairchild FDA20N50 500v n-channel mosfet Datasheet

UniFET
TM
FDA20N50
500V N-Channel MOSFET
Features
Description
• 22A, 500V, RDS(on) = 0.23Ω @VGS = 10 V
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low gate charge ( typical 45.6 nC)
• Low Crss ( typical 27 pF)
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
G
TO-3P
FDA Series
G DS
S
Absolute Maximum Ratings
Symbol
Parameter
FDA20N50
Unit
500
V
22
13.2
A
A
(Note 1)
88
A
± 30
V
1110
mJ
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
22
A
EAR
Repetitive Avalanche Energy
(Note 1)
28.0
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
4.5
V/ns
280
2.3
W
W/°C
-55 to +150
°C
300
°C
(TC = 25°C)
- Derate above 25°C
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2007 Fairchild Semiconductor Corporation
FDA20N50 Rev. B
1
Min.
Max.
Unit
--
0.44
°C/W
0.24
--
°C/W
--
40
°C/W
www.fairchildsemi.com
FDA20N50 500V N-Channel MOSFET
April 2007
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDA20N50
FDA20N50
TO-3P
--
--
30
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
500
--
--
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
--
0.50
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125°C
---
---
1
10
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
--
0.20
0.23
Ω
--
24.6
--
S
--
2400
3120
pF
--
355
465
pF
--
27
--
pF
--
95
200
ns
--
375
760
ns
--
100
210
ns
--
105
220
ns
--
45.6
59.5
nC
--
14.8
--
nC
--
21.6
--
nC
20
A
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 11A
gFS
Forward Transconductance
VDS = 40V, ID = 11A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250V, ID = 20A
RG = 25Ω
(Note 4, 5)
VDS = 400V, ID = 20A
VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
80
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 22A
--
--
1.4
V
trr
Reverse Recovery Time
507
--
ns
Reverse Recovery Charge
VGS = 0V, IS = 20A
dIF/dt =100A/μs
--
Qrr
--
7.20
--
μC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 4.1mH, IAS = 22A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 22A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDA20N50 Rev. B
2
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FDA20N50 500V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2
10
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
10
ID, Drain Current [A]
ID, Drain Current [A]
Top :
0
10
o
150 C
1
o
10
25 C
o
-55 C
* Notes :
1. 250μs Pulse Test
* Notes :
1. VDS = 40V
o
2. TC = 25 C
2. 250μs Pulse Test
0
-1
0
10
10
1
10
10
2
4
VDS, Drain-Source Voltage [V]
6
8
10
12
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
IDR, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
0.8
0.6
VGS = 10V
0.4
VGS = 20V
0.2
o
1
10
o
150 C
o
25 C
*Notes :
1. VGS = 0V
* Note : TJ = 25 C
0.0
2. 250μs Pulse Test
0
0
15
30
45
60
75
10
90
0.2
0.4
0.6
Figure 5. Capacitance Characteristics
1.2
1.4
1.6
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 100V
Coss = Cds + Cgd
5000
VGS, Gate-Source Voltage [V]
4000
Ciss
3000
2000
* Note :
1. VGS = 0 V
2. f = 1 MHz
Crss
VDS = 250V
10
Crss = Cgd
Coss
Capacitances [pF]
1.0
12
6000
1000
0.8
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
VDS = 400V
8
6
4
2
* Note : ID = 20A
0
-1
10
0
10
0
1
10
FDA20N50 Rev. B
0
10
20
30
40
50
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FDA20N50 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
Drain-Source On-Resistance
3.0
RDS(ON), (Normalized)
RDS(ON)On-Resistance
, (Normalized)
Drain-Source
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
2. ID = 250 μA
0.8
-100
-50
0
50
100
2.5
2.5
2.0
2.0
1.5
1.5
1.0
1.0
* Notes :
1. VGS = 10 V
2. ID = 5.5 A
0.5
* Notes :
1. VGS = 10 V
0.5
0.0
-100
150
-50
0.0
-100
200
0
50
100
2. ID = 11 A
150
200
o
TJ, 0Junction Temperature
[ C]
50
100
-50
o
TJ, Junction Temperature [ C]
150
200
o
TJ, Junction Temperature [ C]
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
25
2
10
20
ID, Drain Current [A]
ID, Drain Current [A]
10 μs
100 μs
1 ms
10 ms
DC 100 ms
1
10
Operation in This Area
is Limited by R DS(on)
0
10
* Notes :
o
1. TC = 25 C
15
10
5
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
10
1
2
10
0
25
3
10
10
50
75
100
125
150
o
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
0
D = 0 .5
10
-1
0 .2
0 .1
PDM
0 .0 5
10
t1
0 .0 2
0 .0 1
-2
* N o te s :
t2
o
1 . Z θJC (t) = 0 .4 4 C /W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
s in g le p u ls e
Z
θJC
(t), Thermal Response
10
3 . T JM - T C = P D M * Z θJC ( t)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
FDA20N50 Rev. B
4
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FDA20N50 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDA20N50 500V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDA20N50 Rev. B
5
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FDA20N50 500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDA20N50 Rev. B
6
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TO-3P
15.60 ±0.20
3.00 ±0.20
3.80 ±0.20
+0.15
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.50 –0.05
16.50 ±0.30
2.00 ±0.20
9.60 ±0.20
4.80 ±0.20
3.50 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
FDA20N50 Rev. B
7
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FDA20N50 500V N-Channel MOSFET
Mechanical Dimensions
FDA20N50 500V N-Channel MOSFET
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
FDA20N50 Rev. B
8
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Definition of Terms
Datasheet Identification
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Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
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Rev. I24
9
FDA20N50 Rev. B
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FDA20N50 500V N-Channel MOSFET
tm
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