Infineon BSP296L6327 Sipmosï small-signal-transistor Datasheet

BSP296
Rev. 2.1
SIPMOS Small-Signal-Transistor
Feature
Product Summary
• N-Channel
VDS
100
V
• Enhancement mode
RDS(on)
0.7
Ω
• Logic Level
ID
1.1
A
• dv/dt rated
PG-SOT223
• Pb-free lead plating; RoHS compliant
4
x Qualified according to AEC Q101
3
2
1
Type
Package
Tape and Reel Information
Marking
Packaging
BSP296
PG-SOT223
L6433: 4000 pcs/reel
BSP296
Non dry
BSP296
PG-SOT223
L6327: 1000 pcs/reel
BSP296
Non dry
VPS05163
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Value
A
TA=25°C
1.1
TA=70°C
0.88
Pulsed drain current
Unit
I D puls
4.4
dv/dt
6
VGS
±20
TA=25°C
Reverse diode dv/dt
kV/µs
IS=1.1A, VDS=80V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
ESD (JESD22-A114-HBM)
V
1B (>500V, <1000V)
Power dissipation
Ptot
1.79
W
-55... +150
°C
TA=25°C
Operating and storage temperature
T j , Tstg
IEC climatic category; DIN IEC 68-1
55/150/56
Page 1
2009-08-18
BSP296
Rev. 2.1
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
-
25
@ min. footprint
-
-
115
@ 6 cm 2 cooling area 1)
-
-
70
Characteristics
Thermal resistance, junction - soldering point
RthJS
K/W
(Pin 4)
SMD version, device on PCB:
RthJA
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
V(BR)DSS
100
-
-
VGS(th)
0.8
1.4
1.8
Static Characteristics
Drain-source breakdown voltage
V
VGS=0, ID =250µA
Gate threshold voltage, VGS = VDS
ID=400µA
Zero gate voltage drain current
µA
I DSS
VDS=100V, VGS=0, Tj=25°C
-
-
0.1
VDS=100V, VGS=0, Tj=150°C
-
-
50
I GSS
-
10
100
nA
RDS(on)
-
0.62
1
Ω
RDS(on)
-
0.43
0.7
Gate-source leakage current
VGS=20V, VDS=0
Drain-source on-state resistance
VGS=4.5V, ID=0.95A
Drain-source on-state resistance
VGS=10V, ID=1.1A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2009-08-18
BSP296
Rev. 2.1
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
0.6
1.2
-
S
pF
Dynamic Characteristics
Transconductance
gfs
VDS≥2*ID*RDS(on)max,
ID=0.88A
Input capacitance
Ciss
VGS=0, VDS=25V,
-
291
364
Output capacitance
Coss
f=1MHz
-
53
66
Reverse transfer capacitance
Crss
-
29
36
Turn-on delay time
td(on)
VDD=50V, VGS=10V,
-
5.2
7.8
Rise time
tr
ID=1.1A, RG=6Ω
-
7.9
11.8
Turn-off delay time
td(off)
-
37.4
56.1
Fall time
tf
-
21.4
32.1
-
0.7
0.9
-
5
7.5
-
13.8
17.2
V(plateau) VDD =80V, ID = 1.1 A
-
2.7
-
V
IS
-
-
1.1
A
-
-
4.4
ns
Gate Charge Characteristics
Gate to source charge
Q gs
Gate to drain charge
Q gd
Gate charge total
Qg
VDD =80V, ID =1.1A
VDD =80V, ID =1.1A,
nC
VGS =0 to 10V
Gate plateau voltage
Reverse Diode
Inverse diode continuous
TA=25°C
forward current
Inv. diode direct current, pulsed ISM
Inverse diode forward voltage
VSD
VGS=0, IF = IS
-
0.82
1.2
V
Reverse recovery time
trr
VR=50V, I F=lS ,
-
44.3
55.4
ns
Reverse recovery charge
Qrr
diF/dt=100A/µs
-
71.9
89.8
nC
Page 3
2009-08-18
BSP296
Rev. 2.1
1 Power dissipation
2 Drain current
Ptot = f (TA)
ID = f (TA)
parameter: VGS ≥ 10 V
BSP296
1.9
1.3
W
A
1.6
1.1
BSP296
1
0.9
1.2
ID
P tot
1.4
0.8
0.7
1
0.6
0.8
0.5
0.6
0.4
0.3
0.4
0.2
0.2
0.1
0
0
20
40
60
80
100
120
°C
0
0
160
20
40
60
80
100
120
TA
160
TA
3 Safe operating area
4 Transient thermal impedance
ID = f ( VDS )
ZthJA = f (tp )
parameter : D = 0 , TA = 25 °C
parameter : D = tp /T
1 BSP296
10
°C
10 2
BSP296
K/W
tp = 120.0µs
A
)
DS
(o
n
0
1 ms
ID
R
10
Z thJA
=
V
DS
/I
D
10 1
10 0
10 -1
10 ms
D = 0.50
0.20
10
-1
10
-2
0.10
0.05
0.02
10 -3
single pulse
10 -4 -7
10
10
0.01
DC
10
-2
10
0
10
1
10
2
V
10
3
VDS
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Page 4
2009-08-18
BSP296
Rev. 2.1
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS)
RDS(on) = f (ID)
parameter: Tj = 25 °C, VGS
parameter: Tj = 25 °C, VGS
2
2
3.7V
3.9V
4.1V
1.6 4.3V
4.5V
1.4 10V
3.1V
1.2
2.7V
1
0.8
2.1V
Ω
R DS(on)
ID
A
2.5V 2.7V
3.1V
3.7V
3.9V
4.5V
5V
6V
10V
1.4
1.1
2.5V
0.8
0.6
2.1V
0.4
0.5
0.2
0
0
0.5
1
1.5
2
0.2
0
3
V
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
VDS
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max
gfs = f(ID)
parameter: Tj = 25 °C
parameter: Tj = 25 °C
2
2
2
S
gfs
A
ID
A
ID
1.2
1.2
0.8
0.8
0.4
0.4
0
0
0.4 0.8 1.2 1.6
2
2.4 2.8 3.2 V
4
VGS
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 A
2
ID
Page 5
2009-08-18
BSP296
Rev. 2.1
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on) = f (Tj )
VGS(th) = f (Tj )
parameter : ID = 1.1 A, VGS = 10 V
parameter: VGS = VDS ; ID =400µA
BSP296
2.4
2.8
Ω
V
2.4
2
V GS(th)
R DS(on)
2.2
2
1.8
1.6
1.6
1.4
1.4
1.2
1.2
1
1
typ.
2%
0.8
98%
0.8
98%
1.8
0.6
0.6
0.4
typ
0.4
0.2
0.2
0
-60
-20
20
60
100
°C
0
-60
180
-20
20
60
100
Tj
°C
Tj
160
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
IF = f (VSD)
parameter: VGS =0, f=1 MHz, Tj = 25 °C
parameter: Tj
10
3
10 1
BSP296
A
C iss
pF
C
IF
10 0
10
2
Coss
10 -1
Tj = 25 °C typ
Crss
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10
1
0
5
10
15
20
V
30
VDS
10 -2
0
0.4
0.8
1.2
1.6
2
2.4 V
3
VSD
Page 6
2009-08-18
BSP296
Rev. 2.1
13 Typ. gate charge
14 Drain-source breakdown voltage
VGS = f (QG ); parameter: VDS ,
V(BR)DSS = f (Tj)
ID = 1.1 A pulsed, Tj = 25 °C
16
BSP296
BSP296
120
V
V (BR)DSS
V
V GS
12
10
114
112
110
108
106
8 0.2 VDS max
104
0.5 VDS max
102
6 0.8 V
DS max
100
98
4
96
94
2
92
0
0
2
4
6
8
10
12
14
16
90
-60
18 nC 21
QG
-20
20
60
100
°C
180
Tj
Page 7
2009-08-18
Rev. 2.1
Page 8
BSP296
2009-08-18
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