MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C7 650VCoolMOS™C7PowerTransistor IPL65R099C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPL65R099C7 1Description ThinPAK8x8 CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. CoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.Theproductportfolio providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering betterefficiency,reducedgatecharge,easyimplementationand outstandingreliability. Features •IncreasedMOSFETdv/dtruggedness •BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •ThinPAKSMDPackagewithverylowparasiticinductancetoenablefast andreliableswitchingwithminimumofsizetoincreasepower-density •Easytouse/driveduetodriversourcepinforbettercontrolofthegate. •Pb-freeplating,halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Drain Pin 5 Gate Pin 1 Driver Source Pin 2 Power Source Pin 3,4 Benefits •Enablinghighersystemefficiencybylowerswitchinglosses •Enablinghigherfrequency/increasedpowerdensitysolutions •Systemcost/sizesavingsduetoreducedcoolingrequirements •Highersystemreliabilityduetoloweroperatingtemperatures Applications PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server, Telecom,UPSandSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 99 mΩ Qg.typ 45 nC ID,pulse 100 A Eoss@400V 5.5 µJ Body diode di/dt 60 A/µs Type/OrderingCode Package Marking IPL65R099C7 PG-VSON-4 65C7099 Final Data Sheet 2 RelatedLinks see Appendix A Rev.2.0,2013-11-05 650VCoolMOS™C7PowerTransistor IPL65R099C7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 3 Rev.2.0,2013-11-05 650VCoolMOS™C7PowerTransistor IPL65R099C7 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current 1) Values Unit Note/TestCondition 21 15 A TC=25°C TC=100°C - 100 A TC=25°C - - 118 mJ ID=8.4A; VDD=50V; see table 10 EAR - - 0.59 mJ ID=8.4A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 8.4 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 128 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Mounting torque - - - n.a. Ncm - Continuous diode forward current IS - - 21 A TC=25°C Diode pulse current2) IS,pulse - - 100 A TC=25°C Reverse diode dv/dt 3) dv/dt - - 1.5 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 60 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min Min. Typ. Max. ID - - Pulsed drain current 2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 1) Limited by Tj max. Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 4 Rev.2.0,2013-11-05 650VCoolMOS™C7PowerTransistor IPL65R099C7 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Thermal resistance, junction - ambient Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 0.98 °C/W - RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient for SMD version RthJA - 35 45 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper °C/W area for drain connection and cooling. PCB is vertical without air stream cooling. Reflow soldering temperature Tsold - - 260 °C Final Data Sheet 5 reflow MSL3 Rev.2.0,2013-11-05 650VCoolMOS™C7PowerTransistor IPL65R099C7 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.5 4 V VDS=VGS,ID=0.59mA - 10 1 - µA VDS=650,VGS=0V,Tj=25°C VDS=650,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.088 0.210 0.099 - Ω VGS=10V,ID=5.9A,Tj=25°C VGS=10V,ID=5.9A,Tj=150°C Gate resistance RG - 0.9 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 650 - Gate threshold voltage V(GS)th 3 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 2140 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 33 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related 1) Co(er) - 69 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related Co(tr) - 763 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 11 - ns VDD=400V,VGS=13V,ID=5.9A, RG=5.3Ω;seetable9 Rise time tr - 5 - ns VDD=400V,VGS=13V,ID=5.9A, RG=5.3Ω;seetable9 Turn-off delay time td(off) - 89 - ns VDD=400V,VGS=13V,ID=5.9A, RG=5.3Ω;seetable9 Fall time tf - 12 - ns VDD=400V,VGS=13V,ID=5.9A, RG=5.3Ω;seetable9 Unit Note/TestCondition 2) Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 11 - nC VDD=400V,ID=5.9A,VGS=0to10V Gate to drain charge Qgd - 15 - nC VDD=400V,ID=5.9A,VGS=0to10V Gate charge total Qg - 45 - nC VDD=400V,ID=5.9A,VGS=0to10V Gate plateau voltage Vplateau - 5.0 - V VDD=400V,ID=5.9A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 6 Rev.2.0,2013-11-05 650VCoolMOS™C7PowerTransistor IPL65R099C7 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=5.9A,Tj=25°C 700 - ns VR=400V,IF=21A,diF/dt=60A/µs; see table 8 - 8 - µC VR=400V,IF=21A,diF/dt=60A/µs; see table 8 - 25 - A VR=400V,IF=21A,diF/dt=60A/µs; see table 8 Min. Typ. Max. VSD - 0.8 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 7 Rev.2.0,2013-11-05 650VCoolMOS™C7PowerTransistor IPL65R099C7 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 140 100 µs 1 ms 10 µs 1 µs 10 ms 120 10 DC 1 100 80 ID[A] Ptot[W] 100 60 10-1 40 10-2 20 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 10 100 µs 10 µs 100 1 µs 1 ms 0.5 10 ms 101 DC 0.2 ID[A] ZthJC[K/W] 100 10-1 0.1 10-1 0.05 0.02 0.01 single pulse 10-2 10-3 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 8 Rev.2.0,2013-11-05 650VCoolMOS™C7PowerTransistor IPL65R099C7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 120 70 20 V 60 20 V 10 V 8V 100 10 V 8V 7V 50 80 6V 7V ID[A] ID[A] 40 60 30 5.5 V 40 20 6V 5V 20 0 5.5 V 10 4.5 V 5V 4.5 V 0 5 10 15 0 20 0 5 10 VDS[V] 15 ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 0.30 5.5 V 0.25 6.5 V 6V 7V 0.23 20 V 0.21 0.28 0.26 10 V 0.19 0.24 0.17 RDS(on)[Ω] RDS(on)[Ω] 20 VDS[V] 0.22 0.20 0.15 98% 0.13 typ 0.11 0.18 0.09 0.16 0.14 0.07 0 10 20 30 40 50 60 0.05 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=5,9A;VGS=10V 9 Rev.2.0,2013-11-05 650VCoolMOS™C7PowerTransistor IPL65R099C7 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 120 12 120 V 100 10 25 °C 8 VGS[V] ID[A] 80 60 150 °C 6 40 4 20 2 0 400 V 0 2 4 6 8 10 0 12 0 20 VGS[V] 40 60 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=5.9Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 120 100 125 °C 101 80 IF[A] EAS[mJ] 25 °C 100 60 40 20 10-1 0.0 0.5 1.0 1.5 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=8.4A;VDD=50V 10 Rev.2.0,2013-11-05 650VCoolMOS™C7PowerTransistor IPL65R099C7 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 105 760 740 104 720 Ciss 700 C[pF] VBR(DSS)[V] 103 680 660 102 Coss 640 620 101 600 Crss 580 -60 -20 20 60 100 140 180 100 0 100 200 Tj[°C] 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 7 6 Eoss[µJ] 5 4 3 2 1 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 11 Rev.2.0,2013-11-05 650VCoolMOS™C7PowerTransistor IPL65R099C7 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table9switchingtimes(ss) Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) td(off) tr ton tf toff Table10Unclampedinductiveload(ss) Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD VDS VDS Final Data Sheet 12 ID VDS Rev.2.0,2013-11-05 650VCoolMOS™C7PowerTransistor IPL65R099C7 7PackageOutlines Figure1OutlinePG-VSON-4,dimensionsinmm/inches Final Data Sheet 13 Rev.2.0,2013-11-05 650VCoolMOS™C7PowerTransistor IPL65R099C7 8AppendixA Table11RelatedLinks • IFXCoolMOSTMC7Webpage:www.infineon.com • IFXCoolMOSTMC7applicationnote:www.infineon.com • IFXCoolMOSTMC7simulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 14 Rev.2.0,2013-11-05 650VCoolMOS™C7PowerTransistor IPL65R099C7 RevisionHistory IPL65R099C7 Revision:2013-11-05,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2013-11-05 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Edition2011-08-01 Publishedby InfineonTechnologiesAG 81726München,Germany ©2011InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 15 Rev.2.0,2013-11-05