MMDT3904 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) C2 • • • • • • • B1 E1 B C E2 Mechanical Data • • SOT-363 A B2 C1 H Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.006 grams (approximate) K M J D C2 B1 F L E1 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J — 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 α 0° 8° All Dimensions in mm E2 B2 C1 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V IC 200 mA Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. 2. 3. 4. Pd 200 mW RθJA 625 °C/W Tj, TSTG -55 to +150 °C Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout documents APO2001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30088 Rev. 14 - 2 1 of 4 www.diodes.com MMDT3904 © Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 60 ⎯ V IC = 10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ⎯ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 ⎯ V IE = 10μA, IC = 0 ICEX ⎯ 50 nA VCE = 30V, VEB(OFF) = 3.0V IBL ⎯ 50 nA VCE = 30V, VEB(OFF) = 3.0V hFE 40 70 100 60 30 ⎯ ⎯ 300 ⎯ ⎯ ⎯ IC = 100μA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.20 0.30 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) 0.65 ⎯ 0.85 0.95 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Output Capacitance Cobo ⎯ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ⎯ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 10 kΩ Voltage Feedback Ratio hre 0.5 8.0 x 10 Small Signal Current Gain hfe 100 400 ⎯ Output Admittance hoe 1.0 40 μS Current Gain-Bandwidth Product fT 300 ⎯ MHz VCE = 20V, IC = 10mA, f = 100MHz Noise Figure NF ⎯ 5.0 dB VCE = 5.0V, IC = 100μA, RS = 1.0kΩ, f = 1.0kHz Delay Time td ⎯ 35 ns Rise Time tr ⎯ 35 ns Storage Time ts ⎯ 200 ns Fall Time tf ⎯ 50 ns OFF CHARACTERISTICS (Note 5) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain SMALL SIGNAL CHARACTERISTICS -4 VCE = 10V, IC = 1.0mA, f = 1.0kHz SWITCHING CHARACTERISTICS Notes: 5. VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA Short duration pulse test used to minimize self-heating. DS30088 Rev. 14 - 2 2 of 4 www.diodes.com MMDT3904 © Diodes Incorporated 15 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) PD, POWER DISSIPATION (mW) 200 150 10 100 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs. Ambient Temperature (Total Device) 0 0.1 200 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage 1 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 1,000 hFE, DC CURRENT GAIN 5 100 10 1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs. Collector Current 0.1 0.01 0.1 1,000 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current 1,000 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 10 1 0.1 0.1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current DS30088 Rev. 14 - 2 3 of 4 www.diodes.com MMDT3904 © Diodes Incorporated Ordering Information Notes: 6. (Note 6) Device Packaging Shipping MMDT3904-7-F SOT-363 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K6N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 2003 P 2004 R May 5 2005 S Jun 6 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30088 Rev. 14 - 2 4 of 4 www.diodes.com MMDT3904 © Diodes Incorporated