Zetex FMMT3906 Sot23 pnp silicon planar switching transistor Datasheet

SOT23 PNP SILICON PLANAR
SWITCHING TRANSISTORS
FMMT3905
FMMT3906
ISSUE 4 – MARCH 2000
SWITCHING CHARACTERISTICS (at Tamb=25 °C unless otherwise stated)
PARAMETER
FMMT3905
FMMT3906
SYMBOL FMMT3905
MIN
MAX
FMMT3906
MIN
VCC=-3V, VBE(off)=-0.5V
IC=-10mA, IB1=-1mA
(See Fig.1)
COMPLEMENTARY TYPES -
VCC=-3V, IC=-10mA
IB1=-IB2=-1mA
(See Fig.2)
ABSOLUTE MAXIMUM RATINGS.
td
35
35
ns
tr
35
35
ns
Storage Time
ts
200
225
ns
Fall Time
tf
60
75
ns
E
C
MAX
Delay Time
Equivalent Test Circuit
FMMT3905 - 2W
FMMT3906 - 2A
CONDITIONS
Rise Time
Delay and Rise Time
PARTMARKING DETAILS -
UNIT
FMMT3905 - FMMT3903
FMMT3906 - FMMT3904
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-40
V
CollectorEmitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
-5
V
-200
mA
330
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
FMMT3905
MIN
Equivalent Test Circuit
MAX MIN
MAX
BreakdownVoltages V(BR)CBO
-40
-40
V
IC=-10µ A, IE=0
V(BR)CEO
-40
-40
V
IC=-1mA, IB=0*
V(BR)EBO
-5
-5
V
IE=-10µ A, IC=0
Cut-Off Currents
Storage and Fall Time
FMMT3906. UNIT CONDITIONS.
ICEX
-50
-50
nA
VCE=-30V, VBE(off)=-3V
IBEX
-50
-50
nA
VCE=-30V, VEB(off)=-3V
Static Forward
Current
Transfer Ratio
hFE
Saturation
Voltages
VCE(sat)
Transition
Frequency
30
40
50
30
15
150
60
80
100
60
30
-0.25
-0.4
IC=-0.1mA, VCE=-1V*
IC=-1mA, VCE=-1V*
IC=-10mA, VCE=-1V*
IC=-50mA, VCE=-1V*
IC=-100mA, VCE=-1V*
300
0.25
0.4
V
V
IC=-10mA, IB=-1mA*
IC=-50mA, IB=-5mA*
VBE(sat)
-0.65 -0.85 -0.65 -0.85 V
-0.95
-0.95 V
IC=-10mA, IB=-1mA*
IC=-50mA, IB=-5mA*
fT
200
250
MHz IC=-10mA, VCE=-20V
f=100MHz
Output Capacitance Cobo
4.5
4.5
pF
VCB=-5V, IE=0, f=100KHz
Input Capacitance
Cibo
10
10
pF
VBE=0.5V, IC=0, f=100KHz
Noise Figure
N
5
4
dB
IC=-200mA, VCE=-5V
Rg=2kΩ , f=30Hz to 15kHz
at -3dB points
*Measured under pulsed conditions. Pulse width=200µs. Duty cycle =1%
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SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTORS
FMMT3905
FMMT3906
SWITCHING CHARACTERISTICS (at Tamb=25 °C unless otherwise stated)
PARAMETER
SYMBOL FMMT3905
MIN
MAX
FMMT3906
MIN
PARTMARKING DETAILS -
FMMT3905 - 2W
FMMT3906 - 2A
CONDITIONS
VCC=-3V, VBE(off)=-0.5V
IC=-10mA, IB1=-1mA
(See Fig.1)
COMPLEMENTARY TYPES -
VCC=-3V, IC=-10mA
IB1=-IB2=-1mA
(See Fig.2)
ABSOLUTE MAXIMUM RATINGS.
td
35
35
ns
tr
35
35
ns
Storage Time
ts
200
225
ns
Fall Time
tf
60
75
ns
E
C
MAX
Delay Time
Equivalent Test Circuit
✪
UNIT
Rise Time
Delay and Rise Time
ISSUE 3 – NOVEMBER 1995
FMMT3905
FMMT3906
FMMT3905 - FMMT3903
FMMT3906 - FMMT3904
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-40
V
CollectorEmitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
-5
V
-200
mA
330
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
FMMT3905
MIN
Equivalent Test Circuit
MAX MIN
MAX
BreakdownVoltages V(BR)CBO
-40
-40
V
IC=-10µ A, IE=0
V(BR)CEO
-40
-40
V
IC=-1mA, IB=0*
V(BR)EBO
-5
-5
V
IE=-10µ A, IC=0
Cut-Off Currents
Storage and Fall Time
FMMT3906. UNIT CONDITIONS.
ICEX
-50
-50
nA
VCE=-30V, VBE(off)=-3V
IBEX
-50
-50
nA
VCE=-30V, VEB(off)=-3V
Static Forward
Current
Transfer Ratio
hFE
Saturation
Voltages
VCE(sat)
Transition
Frequency
30
40
50
30
15
150
60
80
100
60
30
-0.25
-0.4
IC=-0.1mA, VCE=-1V*
IC=-1mA, VCE=-1V*
IC=-10mA, VCE=-1V*
IC=-50mA, VCE=-1V*
IC=-100mA, VCE=-1V*
300
0.25
0.4
V
V
IC=-10mA, IB=-1mA*
IC=-50mA, IB=-5mA*
VBE(sat)
-0.65 -0.85 -0.65 -0.85 V
-0.95
-0.95 V
IC=-10mA, IB=-1mA*
IC=-50mA, IB=-5mA*
fT
200
250
MHz IC=-10mA, VCE=-20V
f=100MHz
Output Capacitance Cobo
4.5
4.5
pF
VCB=-5V, IE=0, f=100KHz
Input Capacitance
Cibo
10
10
pF
VBE=0.5V, IC=0, f=100KHz
Noise Figure
N
5
4
dB
IC=-200mA, VCE=-5V
Rg=2kΩ , f=30Hz to 15kHz
at -3dB points
*Measured under pulsed conditions. Pulse width=200µs. Duty cycle =1%
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