ZSELEC ES3GF 3.0a surface mount glass passivated superfast diode Datasheet

Z ibo Seno Electronic Engineering Co., Ltd.
ES3AF – ES3JF
3.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
Features
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A
Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 1 0 0A Peak
C
B
Low Power Loss
Super-Fast Recovery Time
Plastic Case Material has UL Flammability
Classification Rating 94V-O
F D G
E
Mechanical Data
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Case: SMAF, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.037 grams (approx.)
Lead Free: For RoHS / Lead Free Version
SMAF
Min
Dim
A
B
C
D
E
F
G
3.20
Max
3.60
2.80
1.43
2.40
1.38
0.10
4.40
0.90
0.20
4.80
1.10
0.90
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Symbol
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
ES3AF ES3BF ES3CF ES3DF ES3EF ES3GF ES3JF
Unit
VRRM
VRWM
VR
50
100
150
200
300
400
600
V
VR(RMS)
35
70
105
140
210
280
420
V
IO
3.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
100
A
Forward Voltage
@IF = 3.0A
VFM
@TA = 25°C
@TA = 100°C
IRM
5.0
100
µA
Reverse Recovery Time (Note 1)
trr
35
nS
Typical Junction Capacitance (Note 2)
Cj
45
pF
RJL
60
°C/W
Tj, TSTG
-65 to +150
°C
Peak Reverse Current
At Rated DC Blocking Voltage
@TL = 100°C
@TA=25°C unless otherwise specified
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
0.95
1.25
1.7
V
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
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ES3AF – ES3JF
IF, INSTANTANEOUS FORWARD CURRENT (A)
IO, AVERAGE RECTIFIED CURRENT (A)
4.0
Single phase half wave
Resistive or Inductive load
3.0
2.0
1.0
25
50
75
100
125
ES3JF
0.1
0.01
0
TT, TERMINAL TEMPERATURE (° C)
Fi . 1 Forward Current Deratin Curve
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
120
Tj = 25°C
f = 1.0MHz
Single Half-Sine-Wave
(JEDEC Method)
100
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
ES3EF-ES3GF
-
ES3AF-ES3DF
-
1.0
175
150
Tj = 25°C
Pulse width = 300µs
10
80
60
40
10
20
0
1
1
10
1
100
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60Hz
Fig. 3 Surge Current Derating Curve
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
(-)
1.0Ω
NI
Oscilloscope
(Note 1)
-0.25A
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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