IRF IRLB8721PBF Hexfet power mosfet Datasheet

PD - 97390
IRLB8721PbF
HEXFET® Power MOSFET
Applications
l
Optimized for UPS/Inverter Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
VDSS
RDS(on) max
Qg (typ.)
30V 8.7m @VGS = 10V 7.6nC
:
D
G
D
S
TO-220AB
IRLB8721PbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
30
VGS
Gate-to-Source Voltage
± 20
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
62
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
44
IDM
Pulsed Drain Current
250
PD @TC = 25°C
Maximum Power Dissipation
PD @TC = 100°C
Maximum Power Dissipation
TJ
TSTG
c
g
g
Units
V
A
65
W
33
Linear Derating Factor
0.43
Operating Junction and
-55 to + 175
W/°C
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case)
10lb in (1.1N m)
x
°C
x
Thermal Resistance
Typ.
Max.
–––
2.3
Case-to-Sink, Flat Greased Surface
0.5
–––
Junction-to-Ambient
–––
62
RθJC
Junction-to-Case
RθCS
RθJA
Notes  through
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Parameter
g
f
Units
°C/W
are on page 9
1
4/22/09
IRLB8721PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
30
–––
–––
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
21
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
6.5
8.7
–––
13.1
16
VGS(th)
Gate Threshold Voltage
1.35
1.80
2.35
V
ΔVGS(th)/ΔTJ
Gate Threshold Voltage Coefficient
–––
-7.0
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
μA
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
35
–––
–––
Qg
Total Gate Charge
–––
7.6
13
V
Conditions
VGS = 0V, ID = 250μA
mV/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 31A
VGS = 4.5V, ID
e
= 25A e
VDS = VGS, ID = 25μA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S
VDS = 15V, ID = 25A
VDS = 15V
Qgs1
Pre-Vth Gate-to-Source Charge
–––
1.9
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.2
–––
Qgd
Gate-to-Drain Charge
–––
3.4
–––
ID = 25A
Qgodr
Gate Charge Overdrive
–––
2.0
–––
See Fig. 16
nC
VGS = 4.5V
Qsw
Switch Charge (Qgs2 + Qgd)
–––
4.6
–––
Qoss
Output Charge
–––
7.9
–––
nC
RG
Gate Resistance
–––
2.3
3.8
Ω
td(on)
Turn-On Delay Time
–––
9.1
–––
VDD = 15V, VGS = 4.5V
tr
Rise Time
–––
93
–––
td(off)
Turn-Off Delay Time
–––
9.0
–––
ID = 25A
RG = 1.8Ω
tf
Fall Time
–––
17
–––
Ciss
Input Capacitance
–––
1077
–––
Coss
Output Capacitance
–––
360
–––
Crss
Reverse Transfer Capacitance
–––
110
–––
ns
VDS = 15V, VGS = 0V
e
See Fig. 14
VGS = 0V
pF
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
Max.
Units
–––
98
mJ
–––
25
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
Continuous Source Current
–––
–––
62
ISM
(Body Diode)
Pulsed Source Current
–––
–––
250
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.0
V
p-n junction diode.
TJ = 25°C, IS = 25A, VGS = 0V
trr
Reverse Recovery Time
–––
16
24
ns
TJ = 25°C, IF = 25A, VDD = 15V
Qrr
Reverse Recovery Charge
–––
14
21
nC
di/dt = 200A/μs
2
c
A
showing the
integral reverse
e
e
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IRLB8721PbF
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
10
3.0V
≤ 60μs PULSE WIDTH
Tj = 25°C
100
BOTTOM
10
3.0V
≤ 60μs PULSE WIDTH
Tj = 175°C
1
1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
VGS
10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
100
10
TJ = 175°C
TJ = 25°C
1
VDS = 15V
≤ 60μs PULSE WIDTH
0.1
0.0
2.0
4.0
6.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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8.0
ID = 25A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRLB8721PbF
14
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
10000
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
ID= 25A
VDS= 24V
VDS= 15V
12
10
8
6
4
2
0
10
1
10
0
100
4
16
20
24
28
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1000
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
12
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
100
TJ = 175°C
10
TJ = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100μsec
100
1msec
10msec
10
1
VGS = 0V
TC= 25°C
TJ = 175°C
Single Pulse
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
8
1.8
0.1
1
10
100
VDS, Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLB8721PbF
2.5
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
80
60
40
20
ID = 1.0mA
ID = 250μA
ID = 25μA
2.0
1.5
1.0
0
0.5
25
50
75
100
125
150
175
-75 -50 -25
TC , CaseTemperature (°C)
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( ZthJC )
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.1
τJ
0.01
R1
R1
τJ
τ1
R2
R2
R4
R4
τC
τ1
τ2
τ2
Ci= τi/Ri
Ci i/Ri
0.01
R3
R3
SINGLE PULSE
( THERMAL RESPONSE )
τ3
τ3
τ4
τ4
τ
Ri (°C/W)
0.003454
0.17246
0.786312
1.368218
τι (sec)
13.68748
7.21E-05
0.001227
0.007178
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
32
EAS, Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (mΩ)
IRLB8721PbF
ID = 31A
28
24
20
16
TJ = 125°C
12
8
TJ = 25°C
4
2
4
6
400
I D
5.4A
10A
BOTTOM 25A
TOP
300
200
100
0
8
10
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13a. Maximum Avalanche Energy
vs. Drain Current
V(BR)DSS
15V
L
VDS
DRIVER
D.U.T
RG
20V
VGS
tp
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 13b. Unclamped Inductive Test Circuit
VDS
VGS
RG
RD
VDS
90%
D.U.T.
+
-V DD
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 14a. Switching Time Test Circuit
6
Fig 13c. Unclamped Inductive Waveforms
10%
VGS
td(on)
tr
t d(off)
tf
Fig 14b. Switching Time Waveforms
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IRLB8721PbF
D.U.T
Driver Gate Drive
P.W.
+
ƒ
+
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
V DD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
‚
D=
Period
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
12V
Vgs
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Qgodr
Qgd
Qgs2 Qgs1
Current Sampling Resistors
Fig 16a. Gate Charge Test Circuit
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Fig 16b. Gate Charge Waveform
7
IRLB8721PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRLB8721PbF
TO-220AB Part Marking Information
EXAMPLE: T HIS IS AN IRF 1010
LOT CODE 1789
AS SEMBLED ON WW 19, 2000
IN T HE ASS EMBLY LINE "C"
Note: "P" in as s embly line pos ition
indicates "Lead - Free"
INTERNATIONAL
RECTIFIER
LOGO
AS SEMBLY
LOT CODE
PART NUMBER
DAT E CODE
YEAR 0 = 2000
WEEK 19
LINE C
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.32mH, RG = 25Ω,
IAS = 25A.
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
„ When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/2009
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9
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