SPICE MODEL: MMDT4403 MMDT4403 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · Epitaxial Planar Die Construction A Ideal for Low Power Amplification and Switching C2 · · · · · · · SOT-363 E1 Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) B C G H Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 K Moisture Sensitivity: Level 1 per J-STD-020C M J D Terminals: Solderable per MIL-STD-202, Method 208 F L Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). C2 Terminal Connections: See Diagram B1 E1 Marking (See Page 2): K2T Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 0° 8° All Dimensions in mm Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approx.) Maximum Ratings Dim C1 B2 E2 Mechanical Data · · B1 E2 B2 C1 @ TA = 25°C unless otherwise specified Symbol MMDT4403 Unit Collector-Base Voltage Characteristic VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V IC -600 mA Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: Pd 200 mW RqJA 625 °C/W Tj, TSTG -55 to +150 °C 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead. DS30110 Rev. 7 - 2 1 of 4 www.diodes.com MMDT4403 ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -40 ¾ V IC = -100mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -100mA, IC = 0 ICEX ¾ -100 nA VCE = -35V, VEB(OFF) = -0.4V IBL ¾ -100 nA VCE = -35V, VEB(OFF) = -0.4V hFE 30 60 100 100 20 ¾ ¾ ¾ 300 ¾ ¾ Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.40 -0.75 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(SAT) -0.75 ¾ -0.95 -1.30 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Output Capacitance Ccb ¾ 8.5 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ¾ 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.5 15 kW Voltage Feedback Ratio hre 0.1 8.0 x 10-4 Small Signal Current Gain hfe 60 500 ¾ Output Admittance hoe 1.0 100 mS fT 200 ¾ MHz Delay Time td ¾ 15 ns Rise Time tr ¾ 20 ns Storage Time ts ¾ 225 ns Fall Time tf ¾ 30 ns OFF CHARACTERISTICS (Note 4) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -1.0V -1.0V -1.0V -2.0V -2.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz SWITCHING CHARACTERISTICS VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA Ordering Information (Note 5) Notes: Device Packaging Shipping MMDT4403-7-F SOT-363 3000/Tape & Reel 4. Short duration test pulse used to minimize self-heating effect. 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K2T= Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM K2T K2T YM Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30110 Rev. 7 - 2 2 of 4 www.diodes.com MMDT4403 0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 250 200 150 100 50 IC IB = 10 0.4 TA = 150°C 0.2 0.1 TA = 50°C 0 0 0 25 50 75 100 125 150 175 200 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Collector Emitter Saturation Voltage vs. Collector Current TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1000 1000 VCE = 5V 0.9 0.8 TA = -50°C 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 0.1 10 1 100 hFE, DC CURRENT GAIN (NORMALIZED) VBE(ON), BASE EMITTER VOLTAGE (V) TA = 25°C 0.3 VCE = 5V TA = 150°C TA = 25°C 100 TA = -50°C 10 1 IC, COLLECTOR CURRENT (mA) Fig. 3 Base-Emitter Voltage vs. Collector Current 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 4 DC Current Gain vs. Collector Current VCE = 5V 30 20 Cibo 100 CAPACITANCE (pF) fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 10 10 5.0 Cobo 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Gain Bandwidth Product vs. Collector Current DS30110 Rev. 7 - 2 3 of 4 www.diodes.com 1.0 -0.1 -1.0 -30 -10 REVERSE VOLTS (V) Fig. 6 Typical Capacitance MMDT4403 VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.6 1.4 1.2 IC = 10mA IC = 1mA IC = 100mA IC = 300mA IC = 30mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 1 0.1 10 100 IB, BASE CURRENT (mA) Fig. 7 Typical Collector Saturation Region IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated. DS30110 Rev. 7 - 2 4 of 4 www.diodes.com MMDT4403