CTA2N1P COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features · · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N SOT-363 A Mechanical Data · · · · · Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Case material - UL Flammability Rating Classification 94V-0 Terminal Connections: See Diagram Marking: A03 Weight: 0.006 grams (approx.) A03 H K M J CQ1 GQ2 B C D SQ2 F L Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 All Dimensions in mm Q1 Q2 EQ1 BQ1 DQ2 Maximm Ratings, Total Device @ TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Symbol Value Pd 150 Unit mW RqJA 833 °C/W Tj, TSTG -55 to +150 °C Maximum Ratings, Q1, NPN MMBT4401 NPN Transistor Element@ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V IC 600 mA Collector Current - Continuous Maximum Ratings, Q2, BSS84 P-Channel MOSFET Element Characteristic @ TA = 25°C unless otherwise specified Symbol Value Units Drain-Source Voltage VDSS -50 V Drain-Gate Voltage RGS £ 1.0MW VDGR -50 V ±20 V -130 mA Gate-Source Voltage Continuous VGSS Drain Current Continuous ID DS30295 Rev. A-2 1 of 3 CTA2N1P Electrical Characteristics, Q1, MMBT4401 NPN Transistor Element NEW PRODUCT @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 60 ¾ V Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾ V IE = 100mA, IC = 0 ICEX ¾ 100 nA VCE = 35V, VEB(OFF) = 0.4V IBL ¾ 100 nA VCE = 35V, VEB(OFF) = 0.4V hFE 20 40 80 100 40 ¾ ¾ ¾ 300 ¾ ¾ Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.40 0.75 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base- Emitter Saturation Voltage VBE(SAT) 0.75 ¾ 0.95 1.2 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Ccb ¾ 6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ¾ 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 15 kW Voltage Feedback Ratio hre 0.1 8.0 x 10-4 Small Signal Current Gain hfe 40 500 ¾ Output Admittance hoe 1.0 30 mS fT 250 ¾ MHz Delay Time td ¾ 15 ns Rise Time tr ¾ 20 ns Storage Time ts ¾ 225 ns Fall Time tf ¾ 30 ns OFF CHARACTERISTICS (Note 2) Collector Cutoff Current Base Cutoff Current IC = 100mA, IE = 0 ON CHARACTERISTICS (Note 2) DC Current Gain IC = 100µA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 150mA, VCE = IC = 500mA, VCE = 1.0V 1.0V 1.0V 1.0V 2.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz SWITCHING CHARACTERISTICS VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Electrical Characteristics, Q2, BSS84 P-Channel MOSFET Element @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -50 ¾ ¾ V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS ¾ ¾ ¾ ¾ ¾ ¾ -15 -60 -100 µA µA nA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C Gate-Body Leakage IGSS ¾ ¾ ±10 nA VGS = ±20V, VDS = 0V VDS = VGS, ID = -1mA OFF CHARACTERISTICS (Note 2) ON CHARACTERISTICS (Note 2) VGS(th) -0.8 ¾ -2.0 V RDS (ON) ¾ ¾ 10 W VGS = -5V, ID = 0.100A gFS .05 ¾ ¾ S VDS = -25V, ID = 0.1A Input Capacitance Ciss ¾ ¾ 45 pF Output Capacitance Coss ¾ ¾ 25 pF Reverse Transfer Capacitance Crss ¾ ¾ 12 pF Turn-On Delay Time tD(ON) ¾ 10 ¾ ns Turn-Off Delay Time tD(OFF) ¾ 18 ¾ ns Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS VDS = -25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Notes: VDD = -30V, ID = -0.27A, RGEN = 50W, VGS = -10V 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. DS30295 Rev. A-2 2 of 3 CTA2N1P Notes: (Note 3) Device Packaging Shipping CTA2N1P-7 SOT-363 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information A03 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM A03 Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 Code J K L M N O P Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D 2.0 20 VCE COLLECTOR-EMITTER VOLTAGE (V) 30 CAPACITANCE (pF) NEW PRODUCT Ordering Information Cibo 10 5.0 Cobo 1.0 1.0 0.1 10 50 REVERSE VOLTS (V) Fig. 1 Typical Capacitance (MMBT4401) DS30295 Rev. A-2 1.8 IC = 30mA IC = 1mA IC = 10mA 1.6 IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IB BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region (MMBT4401) 3 of 3 CTA2N1P