DIODES CTA2

CTA2N1P
COMPLEX TRANSISTOR ARRAY
NEW PRODUCT
Features
·
·
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Combines MMBT4401 type transistor with BSS84 type
MOSFET
Small Surface Mount Package
PNP/N-Channel Complement Available: CTA2P1N
SOT-363
A
Mechanical Data
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·
·
·
·
Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Case material - UL Flammability Rating
Classification 94V-0
Terminal Connections: See Diagram
Marking: A03
Weight: 0.006 grams (approx.)
A03
H
K
M
J
CQ1
GQ2
B C
D
SQ2
F
L
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
¾
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
All Dimensions in mm
Q1
Q2
EQ1
BQ1
DQ2
Maximm Ratings, Total Device
@ TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
Value
Pd
150
Unit
mW
RqJA
833
°C/W
Tj, TSTG
-55 to +150
°C
Maximum Ratings, Q1, NPN MMBT4401 NPN Transistor [email protected] TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
IC
600
mA
Collector Current - Continuous
Maximum Ratings, Q2, BSS84 P-Channel MOSFET Element
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Value
Units
Drain-Source Voltage
VDSS
-50
V
Drain-Gate Voltage RGS £ 1.0MW
VDGR
-50
V
±20
V
-130
mA
Gate-Source Voltage
Continuous
VGSS
Drain Current
Continuous
ID
DS30295 Rev. A-2
1 of 3
CTA2N1P
Electrical Characteristics, Q1, MMBT4401 NPN Transistor Element
NEW PRODUCT
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
60
¾
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
¾
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
¾
V
IE = 100mA, IC = 0
ICEX
¾
100
nA
VCE = 35V, VEB(OFF) = 0.4V
IBL
¾
100
nA
VCE = 35V, VEB(OFF) = 0.4V
hFE
20
40
80
100
40
¾
¾
¾
300
¾
¾
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.40
0.75
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base- Emitter Saturation Voltage
VBE(SAT)
0.75
¾
0.95
1.2
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Output Capacitance
Ccb
¾
6.5
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Ceb
¾
30
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
15
kW
Voltage Feedback Ratio
hre
0.1
8.0
x 10-4
Small Signal Current Gain
hfe
40
500
¾
Output Admittance
hoe
1.0
30
mS
fT
250
¾
MHz
Delay Time
td
¾
15
ns
Rise Time
tr
¾
20
ns
Storage Time
ts
¾
225
ns
Fall Time
tf
¾
30
ns
OFF CHARACTERISTICS (Note 2)
Collector Cutoff Current
Base Cutoff Current
IC = 100mA, IE = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
IC = 100µA, VCE =
IC = 1.0mA, VCE =
IC = 10mA, VCE =
IC = 150mA, VCE =
IC = 500mA, VCE =
1.0V
1.0V
1.0V
1.0V
2.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = 10V, IC = 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
VCC = 30V, IC = 150mA,
VBE(off) = 2.0V, IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Electrical Characteristics, Q2, BSS84 P-Channel MOSFET Element
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
-50
¾
¾
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
¾
¾
¾
¾
¾
¾
-15
-60
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ = 25°C
VDS = -50V, VGS = 0V, TJ = 125°C
VDS = -25V, VGS = 0V, TJ = 25°C
Gate-Body Leakage
IGSS
¾
¾
±10
nA
VGS = ±20V, VDS = 0V
VDS = VGS, ID = -1mA
OFF CHARACTERISTICS (Note 2)
ON CHARACTERISTICS (Note 2)
VGS(th)
-0.8
¾
-2.0
V
RDS (ON)
¾
¾
10
W
VGS = -5V, ID = 0.100A
gFS
.05
¾
¾
S
VDS = -25V, ID = 0.1A
Input Capacitance
Ciss
¾
¾
45
pF
Output Capacitance
Coss
¾
¾
25
pF
Reverse Transfer Capacitance
Crss
¾
¾
12
pF
Turn-On Delay Time
tD(ON)
¾
10
¾
ns
Turn-Off Delay Time
tD(OFF)
¾
18
¾
ns
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = -25V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Notes:
VDD = -30V, ID = -0.27A,
RGEN = 50W, VGS = -10V
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
DS30295 Rev. A-2
2 of 3
CTA2N1P
Notes:
(Note 3)
Device
Packaging
Shipping
CTA2N1P-7
SOT-363
3000/Tape & Reel
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
A03 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
YM
A03
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
Code
J
K
L
M
N
O
P
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
2.0
20
VCE COLLECTOR-EMITTER VOLTAGE (V)
30
CAPACITANCE (pF)
NEW PRODUCT
Ordering Information
Cibo
10
5.0
Cobo
1.0
1.0
0.1
10
50
REVERSE VOLTS (V)
Fig. 1 Typical Capacitance (MMBT4401)
DS30295 Rev. A-2
1.8
IC = 30mA
IC = 1mA
IC = 10mA
1.6
IC = 100mA
1.4
IC = 300mA
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
100
IB BASE CURRENT (mA)
Fig. 2 Typical Collector Saturation Region (MMBT4401)
3 of 3
CTA2N1P