Fairchild FQP10N60C 600v n-channel mosfet Datasheet

QFET
®
FQP10N60C / FQPF10N60C
600V N-Channel MOSFET
Features
Description
• 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
G
TO-220
G DS
FQP Series
TO-220F
GD S
FQPF Series
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
FQP10N60C
FQPF10N60C
600
Units
V
- Continuous (TC = 25°C)
9.5
9.5 *
A
- Continuous (TC = 100°C)
5.7
5.7 *
A
38 *
A
IDM
Drain Current
- Pulsed
VGSS
Gate-Source Voltage
(Note 1)
38
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
700
mJ
IAR
Avalanche Current
(Note 1)
9.5
A
15.6
mJ
4.5
V/ns
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
156
50
W
1.25
0.4
W/°C
-55 to +150
°C
300
°C
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FQP10N60C
FQPF10N60C
Units
0.8
2.5
°C/W
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
©2007 Fairchild Semiconductor Corporation
FQP10N60C / FQPF10N60C Rev. C
1
www.fairchildsemi.com
FQP10N60C / FQPF10N60C 600V N-Channel MOSFET
April 2007
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQP10N60C
FQP10N60C
TO-220
--
--
50
FQPF10N60C
FQPF10N60C
TO-220F
--
--
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
600
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.7
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
--
1
µA
VDS = 480 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 4.75 A
--
0.6
0.73
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 4.75 A
--
8.0
--
S
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1570
2040
pF
--
166
215
pF
--
18
24
pF
--
23
55
ns
--
69
150
ns
--
144
300
ns
--
77
165
ns
--
44
57
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 9.5A,
RG = 25 Ω
(Note 4, 5)
VDS = 480 V, ID = 9.5A,
VGS = 10 V
(Note 4, 5)
--
6.7
--
nC
--
18.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
9.5
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
38
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 9.5 A
--
--
1.4
V
trr
Reverse Recovery Time
--
420
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 9.5 A,
dIF / dt = 100 A/µs
--
4.2
--
µC
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 14.2mH, IAS = 9.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 9.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2
FQP10N60C / FQPF10N60C Rev. C
www.fairchildsemi.com
FQP10N60C / FQPF10N60C 600V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
0
10
-1
0
0
10
2. 250µs Pulse Test
-1
10
2
1
10
-55°C
25°C
* Notes :
1. VDS = 40V
* Notes :
1. 250µs Pulse Test
2. TC = 25°C
10
150°C
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
IDR, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
2.0
1.5
VGS = 10V
1.0
VGS = 20V
0.5
1
10
0
10
150°C
* Notes :
1. VGS = 0V
25°C
2. 250µs Pulse Test
* Note : TJ = 25°C
0.0
-1
0
5
10
15
20
25
30
10
35
0.2
0.4
ID, Drain Current [A]
0.6
0.8
Figure 5. Capacitance Characteristics
Coss = Cds + Cgd
Crss = Cgd
VDS = 120V
VGS, Gate-Source Voltage [V]
10
Ciss
Capacitance [pF]
1.4
12
Ciss = Cgs + Cgd (Cds = shorted)
2000
Coss
1500
1.2
Figure 6. Gate Charge Characteristics
3000
2500
1.0
VSD, Source-Drain voltage [V]
* Notes ;
1. VGS = 0 V
1000
Crss
2. f = 1 MHz
500
VDS = 300V
VDS = 480V
8
6
4
2
* Note : ID = 9.5A
0
-1
10
0
0
10
0
1
10
3
FQP10N60C / FQPF10N60C Rev. C
10
20
30
40
50
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
FQP10N60C / FQPF10N60C 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
2. ID = 250µA
0.8
-100
-50
0
50
100
2.5
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
0.5
2. ID = 4.75 A
150
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [°C]
TJ, Junction Temperature [°C]
Figure 9-1. Maximum Safe Operating Area
for FQP10N60C
Figure 9-2. Maximum Safe Operating Area
for FQPF10N60C
2
10
Operation in This Area
is Limited by R DS(on)
Operation in This Area
is Limited by R DS(on)
2
10
10 µs
10 µs
10
100 µs
ID, Drain Current [A]
ID, Drain Current [A]
100 µs
1
1 ms
10 ms
100 ms
DC
0
10
* Notes :
1. TC = 25°C
1
10
1 ms
10 ms
100 ms
DC
0
10
-1
* Notes :
1. TC = 25°C
10
2. TJ = 150°C
2. TJ = 150°C
3. Single Pulse
3. Single Pulse
-1
10
-2
0
1
10
2
10
10
3
10
10
0
10
VDS, Drain-Source Voltage [V]
1
10
2
10
3
10
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
10
ID, Drain Current [A]
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [°C]
4
FQP10N60C / FQPF10N60C Rev. C
www.fairchildsemi.com
FQP10N60C / FQPF10N60C 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FQP10N60C / FQPF10N60C 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP10N60C
10
0
0 .2
10
-1
* N o te s :
1 . Z θ JC ( t) = 0 .8 ° C /W M a x .
0 .1
2 . D u ty F a c to r , D = t1/t2
3 . T JM - T C = P D M * Z θJC ( t)
0 .0 5
0 .0 2
PDM
0 .0 1
θJC
(t), Thermal Response
D = 0 .5
t1
Z
s in g le p u ls e
10
-2
10
t2
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF10N60C
D = 0 .5
0
0 .2
* N o te s :
1 . Z θJC ( t) = 2 .5 °C /W M a x .
0 .1
2 . D u ty F a c to r , D = t1 /t2
3 . T JM - T C = P D M * Z θJC ( t)
0 .0 5
10
-1
0 .0 2
0 .0 1
PDM
Z
θJC
(t), Thermal Response
10
t1
s in g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
5
FQP10N60C / FQPF10N60C Rev. C
www.fairchildsemi.com
FQP10N60C / FQPF10N60C 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
FQP10N60C / FQPF10N60C Rev. C
www.fairchildsemi.com
FQP10N60C / FQPF10N60C 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7
FQP10N60C / FQPF10N60C Rev. C
www.fairchildsemi.com
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
(45°
1.52 ±0.10
10.08 ±0.30
(1.00)
13.08 ±0.20
)
1.27 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
8
FQP10N60C / FQPF10N60C Rev. C
www.fairchildsemi.com
FQP10N60C / FQPF10N60C 600V N-Channel MOSFET
Mechanical Dimensions
(Continued)
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
0°
(3
9.75 ±0.30
MAX1.47
)
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
9
FQP10N60C / FQPF10N60C Rev. C
www.fairchildsemi.com
FQP10N60C / FQPF10N60C 600V N-Channel MOSFET
Mechanical Dimensions
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an
exhaustive list of all such trademarks.
®
ACEx
Across the board. Around the world.™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
CTL™
Current Transfer Logic™
DOME™
2
E CMOS™
®
EcoSPARK
EnSigna™
FACT Quiet Series™
®
FACT
®
FAST
FASTr™
FPS™
®
FRFET
GlobalOptoisolator™
GTO™
HiSeC™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
MICROCOUPLER™
MicroPak™
MICROWIRE™
Motion-SPM™
MSX™
MSXPro™
OCX™
OCXPro™
®
OPTOLOGIC
®
OPTOPLANAR
PACMAN™
PDP-SPM™
POP™
®
Power220
®
Power247
PowerEdge™
PowerSaver™
Power-SPM™
®
PowerTrench
Programmable Active Droop™
®
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
ScalarPump™
SMART START™
®
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
®
The Power Franchise
TinyBoost™
TinyBuck™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyWire™
TruTranslation™
μSerDes™
®
UHC
UniFET™
VCX™
Wire™
™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I26
© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Similar pages