LRC HVC359 Variable capacitance diode for vcxo Datasheet

LESHAN RADIO COMPANY, LTD.
Variable Capacitance Diode
for VCXO
HVC359
FEATURES
1
• High capacitance ratio and good C-V linearity.
• To be usable at low voltage.
• Ultra small Flat Package (UFP) is suitable for surface mount
design.
2
SOD– 523
1
CATHODE
2
ANODE
DEVICE MARKING
HVC359 = S
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Item
Reversevoltage
Junction temperature
Symbol
VR
Tj
Value
15
125
Unit
V
°C
Storage temperature
Tstg
– 55 to +125
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Item
Reverse current
Symbol
IR1
IR2
Min
–
–
Typ
–
–
Max
10
100
Unit
nA
Test Condition
VR = 10V
VR = 10V, TA = 60°C
24.8
6.0
3.0
–
–
–
–
–
29.8
8.3
–
1.5
pF
Capacitance ratio
Series resistance
C1
C4
n
rs
VR = 1V, f = 1 MHz
VR = 4V, f = 1 MHz
C1/ C4
VR = 4V, f = 100 MHz
ESD-Capability*1
–
80
–
–
V
Capacitance
–
Ω
C =200pF , Both forward
and reverse direction
1 pulse.
Notes 1. Failure criterion ; IR ≥ 20nA at VR =10 V
HVC359–1/2
LESHAN RADIO COMPANY, LTD.
C , CAPACITANCE (pF)
I R , REVERSE CURRENT (A)
HVC359
Reverse voltage VR (V)
Fig.1 Reverse current Vs. Reverse voltage
Reverse voltage VR (V)
Fig.2 Capacitance Vs. Reverse voltage
HVC359–2/2
Similar pages