LESHAN RADIO COMPANY, LTD. Variable Capacitance Diode for VCXO HVC359 FEATURES 1 • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Flat Package (UFP) is suitable for surface mount design. 2 SOD– 523 1 CATHODE 2 ANODE DEVICE MARKING HVC359 = S ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Item Reversevoltage Junction temperature Symbol VR Tj Value 15 125 Unit V °C Storage temperature Tstg – 55 to +125 °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Item Reverse current Symbol IR1 IR2 Min – – Typ – – Max 10 100 Unit nA Test Condition VR = 10V VR = 10V, TA = 60°C 24.8 6.0 3.0 – – – – – 29.8 8.3 – 1.5 pF Capacitance ratio Series resistance C1 C4 n rs VR = 1V, f = 1 MHz VR = 4V, f = 1 MHz C1/ C4 VR = 4V, f = 100 MHz ESD-Capability*1 – 80 – – V Capacitance – Ω C =200pF , Both forward and reverse direction 1 pulse. Notes 1. Failure criterion ; IR ≥ 20nA at VR =10 V HVC359–1/2 LESHAN RADIO COMPANY, LTD. C , CAPACITANCE (pF) I R , REVERSE CURRENT (A) HVC359 Reverse voltage VR (V) Fig.1 Reverse current Vs. Reverse voltage Reverse voltage VR (V) Fig.2 Capacitance Vs. Reverse voltage HVC359–2/2