DIODES FMMT591ATA

A Product Line of
Diodes Incorporated
FMMT591A
SOT23 PNP silicon planar medium power transistor
Features
Low equivalent on resistance RCE(sat) = 350m⍀ at 1A
Part Marking Detail -91A
Complementary type -FMMT491A
Absolute maximum ratings.
Parameter
Symbol
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj ; TSTG
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Peak pulse current
Continuous Collector current
Base current
Power dissipation at Tamb=25oC
Operating an storage temperature range
Value
Unit
-40
-40
-5
-2
-1
-200
500
-55 to +150
V
V
V
A
A
mA
mW
°C
Electrical characteristics (at Tamb = 25°C)
Parameter
Symbol
Min
Unit
Conditions
Collector-Base breakdown voltage
V(BR)CBO
-40
Max
V
IC=-100␮A
Collector-Emitter breakdown voltage
V(BR)CEO
-40
V
IC=-10mA (*)
Emitter-Base breakdown voltage
V(BR)EBO
-5
V
Collector cut-off current
Emitter cut-off current
Collector-Emitter cut-off current
Collector-Emitter saturation voltage
ICBO
IEBO
ICES
VCE(sat)
IE=-100␮A
VCB=-30V
VEB=-4V
VCES=-30V
-100
-100
-100
-0.2
nA
nA
nA
V
-0.35
V
IC=-500mA, IB=-20mA(*)
-0.5
V
IC=-1A, IB=-100mA(*)
IC=-1A, IB=-50mA(*)
Base-Emitter saturation voltage
VBE(sat)
-1.1
V
Base-Emitter turn-on voltage
VBE(on)
-1.0
V
Static forward current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cobo
300
300
800
IC=-100mA, IB=-1mA(*)
IC=-1A, VCE=-5V(*)
IC=-1mA,
IC=-100mA(*)
250
IC=-500mA(*), VCE=-5V
160
IC=-1A(*)
30
IC=-2A(*)
IC=-50mA, VCE=-10V
f=100MHz
VCB=-10V, f=1MHz
150
MHz
10
pF
NOTES:
(*) Measured under pulse conditions. Pulse width=300␮s. Duty cycle 2%
Issue 4 - August 2008
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FMMT591A
Electrical characteristics
Issue 4 - August 2008
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FMMT591A
Intentionally left blank
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FMMT591A
Definitions
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The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
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Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express
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1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
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B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
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ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
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Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2008 Published by Diodes Incorporated
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