LINER LT1037AMH Low noise, high speed precision operational amplifier Datasheet

LT1007/LT1037
Low Noise, High Speed
Precision Operational Amplifiers
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FEATURES
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DESCRIPTIO
Guaranteed 4.5nV/√Hz 10Hz Noise
Guaranteed 3.8nV/√Hz 1kHz Noise
0.1Hz to 10Hz Noise, 60nVP-P Typical
Guaranteed 7 Million Min Voltage Gain, RL = 2k
Guaranteed 3 Million Min Voltage Gain, RL = 600Ω
Guaranteed 25µV Max Offset Voltage
Guaranteed 0.6µV/°C Max Drift with Temperature
Guaranteed 11V/µs Min Slew Rate (LT1037)
Guaranteed 117dB Min CMRR
The LT ®1007/LT1037 series features the lowest noise
performance available to date for monolithic operational
amplifiers: 2.5nV/√Hz wideband noise (less than the noise of
a 400Ω resistor), 1/f corner frequency of 2Hz and 60nV peakto-peak 0.1Hz to 10Hz noise. Low noise is combined with
outstanding precision and speed specifications: 10µV offset
voltage, 0.2µV/°C drift, 130dB common mode and power
supply rejection, and 60MHz gain bandwidth product on the
decompensated LT1037, which is stable for closed-loop
gains of 5 or greater.
The voltage gain of the LT1007/LT1037 is an extremely high
20 million driving a 2kΩ load and 12 million driving a 600Ω
load to ±10V.
In the design, processing and testing of the device, particular
attention has been paid to the optimization of the entire
distribution of several key parameters. Consequently, the
specifications of even the lowest cost grades (the LT1007C
and the LT1037C) have been spectacularly improved compared to equivalent grades of competing amplifiers.
The sine wave generator application shown below utilizes the
low noise and low distortion characteristics of the LT1037.
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APPLICATIO S
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Low Noise Signal Processing
Microvolt Accuracy Threshold Detection
Strain Gauge Amplifiers
Direct Coupled Audio Gain Stages
Sine Wave Generators
Tape Head Preamplifiers
Microphone Preamplifiers
, LTC and LT are registered trademarks of Linear Technology Corporation.
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TYPICAL APPLICATIO
0.1Hz to 10Hz Noise
Ultrapure 1kHz Sine Wave Generator
2
–
3
+
LT1037
6
OUTPUT
C
#327 LAMP
R
C
R
1
2πRC
R = 1591.5Ω ±0.1%
C = 0.1µF ±0.1%
f=
TOTAL HARMONIC DISTORTION = < 0.0025%
NOISE = < 0.0001%
AMPLITUDE = ±8V
OUTPUT FREQUENCY = 1.000kHz FOR VALUES GIVEN ±0.4%
VOLTAGE NOISE (20nV/DIV)
430Ω
1007/37 TA01
0
2
4
6
TIME (SEC)
8
10
1007/37 TA02
sn100737 100737fbs
1
LT1007/LT1037
W W
U
W
ABSOLUTE MAXIMUM RATINGS
(Note 1)
Supply Voltage ...................................................... ±22V
Input Voltage ............................ Equal to Supply Voltage
Output Short-Circuit Duration .......................... Indefinite
Differential Input Current (Note 9) ..................... ± 25mA
Storage Temperature Range ................. – 65°C to 150°C
Lead Temperature (Soldering, 10 sec.)................. 300°C
Operating Temperature Range
LT1007/LT1037AC, C ............................. 0°C to 70°C
LT1007/LT1037I ............................... – 40°C to 85°C
LT1007/LT1037AM, M (OBSOLETE) – 55°C to 125°C
W
U
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PACKAGE/ORDER INFORMATION
TOP VIEW
VOS TRIM
TOP VIEW
VOS
TRIM 1
–IN 2
+IN 3
VOS
8 TRIM
–
+
7
V– 4
V+
6
OUT
5
NC
–IN 2
–
+
+IN 3
N8 PACKAGE
8-LEAD PDIP
TJMAX = 100°C, θJA = 130°C/ W (N8)
ORDER PART NUMBER
LT1007ACN8
LT1007CN8
LT1007IN8
8
VOS
TRIM 1
TOP VIEW
VOS
1
TRIM
–IN 2
7 V+
6 OUT
+IN 3
4
6 OUT
5 NC
V – (CASE)
H PACKAGE
8-LEAD TO-5 METAL CAN
TJMAX = 150°C, θJA = 150°C/ W, θJC = 45°C/ W
S8 PACKAGE
8-LEAD PLASTIC SO
TJMAX = 150°C, θJA = 190°C/ W
ORDER PART NUMBER
ORDER PART NUMBER
LT1037ACN8
LT1037CN8
LT1037IN8
LT1037ACJ8
LT1037AMJ8
LT1037CJ8
LT1037MJ8
VOS
TRIM
7 V+
+
V– 4
5 NC
LT1037CS8
LT1037IS8
LT1007CS8
LT1007IS8
J8 PACKAGE
LEAD CERDIP
TJMAX = 150°C, θJA = 100°C/ W (J8)
LT1007ACJ8
LT1007AMJ8
LT1007CJ8
LT1007MJ8
8
–
S8 PART MARKING
LT1007ACH
LT1007AMH
LT1007CH
LT1007MH
LT1037ACH
LT1037AMH
LT1037CH
LT1037MH
OBSOLETE PACKAGE
OBSOLETE PACKAGE
Consider the N8 Package for Alternate Source
Consider the N8 or S8 Package for Alternate Source
1037
1037I
1007
1007I
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
VS = ±15V, TA = 25°C, unless otherwise noted.
LT1007AC/AM
LT1037AC/AM
MIN
TYP
MAX
LT1007C/I/M
LT1037C/I/M
MIN
TYP
MAX
SYMBOL
PARAMETER
CONDITIONS
VOS
Input Offset Voltage
(Note 2)
10
25
20
60
µV
∆VOS
∆Time
Long Term Input Offset
Voltage Stability
(Notes 3, 4)
0.2
1.0
0.2
1.0
µV/Mo
IOS
Input Offset Current
7
30
12
50
nA
IB
Input Bias Current
±10
±35
±15
±55
nA
en
Input Noise Voltage
0.1Hz to 10Hz (Notes 4, 6)
0.06
0.13
0.06
0.13
µVP-P
Input Noise Voltage Density
fO = 10Hz (Notes 4, 5)
fO = 1000Hz (Note 4)
2.8
2.5
4.5
3.8
2.8
2.5
4.5
3.8
nV/√Hz
nV/√Hz
Input Noise Current Density
fO = 10Hz (Notes 4, 7)
fO = 1000Hz (Notes 4, 7)
1.5
0.4
4.0
0.6
1.5
0.4
4.0
0.6
pA/√Hz
pA/√Hz
in
UNITS
sn100737 100737fbs
2
LT1007/LT1037
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
VS = ±15V, TA = 25°C, unless otherwise noted.
CONDITIONS
LT1007AC/AM
LT1037AC/AM
MIN
TYP
MAX
LT1007C/I/M
LT1037C/I/M
MIN
TYP
MAX
7
5
Input Resistance, Common Mode
Input Voltage Range
UNITS
GΩ
±11.0
±12.5
±11.0
±12.5
V
CMRR
Common Mode Rejection Ratio
VCM = ±11V
117
130
110
126
dB
PSRR
Power Supply Rejection Ratio
VS = ±4V to ±18V
110
130
106
126
dB
AVOL
Large-Signal Voltage Gain
RL ≥ 2k, VO = ±12V
RL ≥ 1k, VO = ±10V
RL ≥ 600Ω, VO = ±10V
7.0
5.0
3.0
20.0
16.0
12.0
5.0
3.5
2.0
20.0
16.0
12.0
V/µV
V/µV
V/µV
VOUT
Maximum Output Voltage Swing
RL ≥ 2k
RL ≥ 600Ω
±13.0
±11.0
±13.8
±12.5
±12.5
±10.5
±13.5
±12.5
V
V
SR
Slew Rate
LT1007
LT1037
RL ≥ 2k
AVCL ≥ 5
1.7
11
2.5
15
1.7
11
2.5
15
V/µs
V/µs
GBW
Gain Bandwidth
Product
LT1007
LT1037
fO = 100kHz (Note 8)
fO = 10kHz (Note 8) (AVCL ≥ 5)
5.0
45
8.0
60
5.0
45
8.0
60
MHz
MHz
ZO
Open-Loop Output Resistance
70
Ω
PD
Power Dissipation
VO = 0V, IO = 0
70
LT1007
LT1037
80
80
120
130
80
85
140
140
mW
mW
The ● denotes the specifications which apply over the temperature range 0°C ≤ TA ≤ 70°C, VS = ±15V, unless otherwise noted.
LT1007AC
LT1037AC
MIN
TYP
MAX
LT1007C
LT1037C
MIN
TYP
MAX
SYMBOL
PARAMETER
CONDITIONS
UNITS
VOS
Input Offset Voltage
(Note 2)
●
20
50
35
110
µV
∆VOS
∆Temp
Average Input Offset Drift
(Note 10)
●
0.2
0.6
0.3
1.0
µV/°C
IOS
Input Offset Current
●
10
40
15
70
nA
IB
Input Bias Current
●
±14
±45
±20
±75
nA
Input Voltage Range
●
±10.5
±11.8
±10.5
±11.8
V
CMRR
Common Mode Rejection Ratio
VCM = ±10.5V
●
114
126
106
120
dB
PSRR
Power Supply Rejection Ratio
VS = ±4.5V to ±18V
●
106
126
102
120
dB
AVOL
Large-Signal Voltage Gain
RL ≥ 2k, VO = ±10V
RL ≥ 1k, VO = ±10V
●
●
4.0
2.5
18.0
14.0
2.5
2.0
18.0
14.0
V/µV
V/µV
VOUT
Maximum Output Voltage Swing
RL ≥ 2k
●
±12.5
±13.6
±12.0
±13.6
PD
Power Dissipation
●
90
144
90
V
160
mW
sn100737 100737fbs
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LT1007/LT1037
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the temperature range – 40°C ≤ TA ≤ 85°C, VS = ±15V, unless otherwise noted.
LT1007I/LT1037I
MIN
TYP
MAX
SYMBOL
PARAMETER
CONDITIONS
VOS
Input Offset Voltage
(Note 2)
●
40
125
µV
∆VOS
∆Temp
Average Input Offset Drift
(Note 10)
●
0.3
1.0
µV/°C
IOS
Input Offset Current
●
20
80
nA
IB
Input Bias Current
●
±25
±90
nA
Input Voltage Range
●
±10
±11.7
V
VCM = ±10.5V
●
105
120
dB
CMRR
Common Mode Rejection Ratio
UNITS
PSRR
Power Supply Rejection Ratio
VS = ±4.5V to ±18V
●
101
120
dB
AVOL
Large-Signal Voltage Gain
RL ≥ 2k, VO = ±10V
RL ≥ 1k, VO = ±10V
●
●
2.0
1.5
15.0
12.0
V/µV
V/µV
VOUT
Maximum Output Voltage Swing
RL ≥ 2k
●
±12.0
±13.6
PD
Power Dissipation
95
●
V
165
mW
The ● denotes the specifications which apply over the temperature range – 55°C ≤ TA ≤ 125°C, VS = ±15V, unless otherwise noted.
LT1007AM/LT1037AM
MIN
TYP
MAX
LT1007M/LT1037M
MIN
TYP
MAX
SYMBOL
PARAMETER
CONDITIONS
UNITS
VOS
Input Offset Voltage
(Note 2)
●
25
60
50
160
µV
∆VOS
∆Temp
Average Input Offset Drift
(Note 10)
●
0.2
0.6
0.3
1.0
µV/°C
IOS
Input Offset Current
●
15
50
20
85
nA
IB
Input Bias Current
●
±20
±60
±35
±95
nA
Input Voltage Range
●
±10.3
±11.5
±10.3
±11.5
V
CMRR
Common Mode Rejection Ratio
VCM = ±10.3V
●
112
126
104
120
dB
PSRR
Power Supply Rejection Ratio
VS = ±4.5V to ±18V
●
104
126
100
120
dB
AVOL
Large-Signal Voltage Gain
RL ≥ 2k, VO = ±10V
RL ≥ 1k, VO = ±10V
●
●
3.0
2.0
14.0
10.0
2.0
1.5
14.0
10.0
V/µV
V/µV
VOUT
Maximum Output Voltage Swing
RL ≥ 2k
●
±12.5
± 13.5
±12.0
±13.5
V
PD
Power Dissipation
For MIL-STD components, please refer to LTC 883C data sheet for test
listing and parameters.
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Input Offset Voltage measurements are performed by automatic
test equipment approximately 0.5 seconds after application of power. AM
and AC grades are guaranteed fully warmed up.
Note 3: Long Term Input Offset Voltage Stability refers to the average
trend line of Offset Voltage vs Time over extended periods after the first 30
days of operation. Excluding the initial hour of operation, changes in VOS
during the first 30 days are typically 2.5µV. Refer to typical performance
curve.
Note 4: This parameter is tested on a sample basis only.
●
100
150
100
170
mW
Note 5: 10Hz noise voltage density is sample tested on every lot. Devices
100% tested at 10Hz are available on request.
Note 6: See the test circuit and frequency response curve for 0.1Hz to
10Hz tester in the Applications Information section.
Note 7: See the test circuit for current noise measurement in the
Applications Information section.
Note 8: This parameter is guaranteed by design and is not tested.
Note 9: The inputs are protected by back-to-back diodes. Current limiting
resistors are not used in order to achieve low noise. If differential input
voltage exceeds ±0.7V, the input current should be limited to 25mA.
Note 10: The Average Input Offset Drift performance is within the
specifications unnulled or when nulled with a pot having a range of 8kΩ to
20kΩ.
sn100737 100737fbs
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LT1007/LT1037
U W
TYPICAL PERFORMANCE CHARACTERISTICS
10Hz Voltage Noise Distribution
100
140
100
VS = ±15V
TA = 25°C
RMS VOLTAGE NOISE DENSITY (nV/√Hz)
VS = ±15V
TA = 25°C
497 UNITS MEASURED
FROM SIX RUNS
120
NUMBER OF UNITS
0.02Hz to 10Hz RMS Noise. Gain = 50,000
(Measured on HP3582 Spectrum Analyzer)
Voltage Noise vs Frequency
80
60
40
20
30
10
MAXIMUM
3
1
0.1
0
0
1
7 8 9
4 5 6
2 3
VOLTAGE NOISE DENSITY (nV/√Hz)
TYPICAL
1/f CORNER = 2Hz
10
1
10
100
FREQUENCY (Hz)
1000
MARKER AT 2Hz ( = 1/f CORNER) =
1007/37 G03
1007/37 G02
1007/37 G01
0.01Hz to 1Hz Peak-to-Peak Noise
Total Noise vs Source Resistance
Voltage Noise vs Temperature
5
1000
TOTAL NOISE DENSITY (nV/√Hz)
VOLTAGE NOISE (20nV/DIV)
R
RMS VOLTAGE NOISE DENSITY (nV/√Hz)
VS = ±15V
TA = 25°C
R
SOURCE RESISTANCE = 2R
100
AT 1kHz
AT 10Hz
10
RESISTOR
NOISE ONLY
1
0
20
40
60
TIME (SEC)
80
100
0.1
1
10
SOURCE RESISTANCE (kΩ)
1007/37 G04
1
TYPICAL
1
10k
1007/37 G07
50
25
0
75
TEMPERATURE (°C)
–25
125
100
Voltage Noise vs Supply Voltage
5
1
0.1
TA = 25°C
4
0.1
1
10
BANDWIDTH (kHz)
100
1007/37 G08
AT 10Hz
3
AT 1kHz
2
1
0
0.01
0.1
100
1k
FREQUENCY (Hz)
AT 1kHz
2
1007/37 G06
RMS VOLTAGE NOISE DENSITY (nV/√Hz)
RMS VOLTAGE NOISE (µV)
RMS NOISE DENSITY (pA/√Hz)
MAXIMUM
10
AT 10Hz
3
0
–50
100
10
1/f CORNER = 120Hz
4
Wideband Voltage Noise
(0.1Hz to Frequency Indicated)
10
0.3
VS = ±15V
1007/37 G05
Current Noise vs Frequency
3
179µV/√Hz
nV
= 3.59
50,000
√Hz
0
5
15
20
10
SUPPLY VOLTAGE (±V)
25
1007/37 G09
sn100737 100737fbs
5
LT1007/LT1037
U W
TYPICAL PERFORMANCE CHARACTERISTICS
Voltage Gain vs Frequency
25
120
100
80
LT1037
LT1007
60
40
20
RL = 2k
–1
20
15
RL = 600Ω
10
0
RL = 2k
–1
1
0
5
0
10 100 1k 10k 100k 1M 10M 100M
FREQUENCY (Hz)
5
0
15
20
10
SUPPLY VOLTAGE (±V)
1007/37 G10
VOLTAGE GAIN (V/µV)
OPEN-LOOP VOLTAGE GAIN (V/µV)
Warm-Up Drift
RL = 2k
15
10
RL = 1k
15
RL = 600Ω
10
VS = ±15V
VOUT = ±10V
VOUT = ±8V FOR
TA ≥ 100°C AND
RL = 600Ω
5
5
0
–50
10
50
25
0
75
TEMPERATURE (°C)
100
4
30
OFFSET VOLTAGE (µV)
5
0.2µV/MONTH
0
–5
DUAL-IN-LINE PACKAGE
PLASTIC (N8) OR CERDIP (J8)
2
0
1
3
4
2
TIME AFTER POWER ON (MINUTES)
5
1007/37 G15
Supply Current vs Supply Voltage
4
VS = ±15V
LT1007/LT1037
LT1007A/LT1037A
SUPPLY CURRENT (mA)
40
20
10
0
–10
–20
3
125°C
2
–55°C
25°C
1
–30
0.2µV/MONTH
TREND LINE
8
METAL CAN (H) PACKAGE
125
50
6
4
TIME (MONTHS)
6
Offset Voltage Drift with Temperature
of Representative Units
10
2
8
1007/37 G14
Long Term Stability of Four
Representative Units
0
VS = ±15V
TA = 25°C
0
–25
1007/37 G13
OFFSET VOLTAGE CHANGE (µV)
1007/37 G12
10
20
0.3
3
1
LOAD RESISTANCE (kΩ)
–10
Voltage Gain vs Temperature
20
–10
–5
0
5
10
15
OUTPUT VOLTAGE (V)
MEASURED ON TEKTRONIX 178 LINEAR IC TESTER
25
VS = ±15V
TA = 25°C
0
0.1
–15
1007/37 G11
Voltage Gain vs Load Resistance
25
25
CHANGE IN OFFSET VOLTAGE (µV)
–20
0.01 0.1 1
1
RL = 600Ω
VS = ±15V
TA = 25°C
0
INPUT VOLTAGE (µV)
OPEN-LOOP VOLTAGE GAIN (V/µV)
140
TA = 25°C
INPUT VOLTAGE (µV)
VS = ±15V
TA = 25°C
RL = 2k
160
VOLTAGE GAIN (dB)
Voltage Gain, RL = 2k and 600Ω
Voltage Gain vs Supply Voltage
180
–40
10
1007/37 G16
–50
–50
0
–25
50
0
75
25
TEMPERATURE (°C)
100
125
1007/37 G17
0
10
5
15
SUPPLY VOLTAGE (±V)
20
1007/37 G18
sn100737 100737fbs
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LT1007/LT1037
U W
TYPICAL PERFORMANCE CHARACTERISTICS
Common Mode Limit vs
Temperature
Common Mode Rejection vs
Frequency
V+
140
VS = ±15V
VCM = ±10V
TA = 25°C
100
LT1037
LT1007
80
60
15
V + = 3V TO 20V
–2
–3
–4
+4
+3
V – = –3V TO –20V
+2
104
105
106
FREQUENCY (Hz)
V–
107
–50
–25
50
25
0
75
TEMPERATURE (°C)
100
1007/37 G19
10
25 50 75
0
TEMPERATURE (°C)
50
12
40
30
LT1007M
LT1037M
20
15
0
25 50
–75 –50 –25 0
75
TEMPERATURE (°C)
100 125
6
50
10
AV = 1000
1
0.1
SHORT-CIRCUIT CURRENT (mA)
SINKING
SOURCING
OUTPUT IMPEDANCE (Ω)
140
POSITIVE
SUPPLY
AV = 1000
AV = 1
AV = 5
0.01
LT1007
LT1037
20
102 103 104 105 106 107 108
FREQUENCY (Hz)
1195 G25
10k
Output Short-Circuit Current
vs Time
VS = ±15V
TA = 25°C
IOUT = 1mA
TA = 25°C
60
300
3k
1k
LOAD RESISTANCE (Ω)
1007/37 G24
100
160
NEGATIVE
SUPPLY
VS = ±15V
TA = 25°C
0
100
100 125
Closed-Loop Output Impedance
100
NEGATIVE
SWING
9
1007/37 G23
PSRR vs Frequency
120
POSITIVE
SWING
3
1007/37 G22
10
10
–10
–5
0
5
COMMON MODE INPUT VOLTAGE (V)
Output Swing vs Load Resistance
LT1007AM
LT1037AM
0
1
DEVICE WITH NEGATIVE
INPUT CURRENT
–10
15
10
LT1007AM
LT1037AM
0
–5
1007/37 G21
OUTPUT SWING (V)
INPUT OFFSET CURRENT (nA)
INPUT BIAS CURRENT (nA)
LT1007M
LT1037M
40
20V
≈ 7G
3nA
RCM =
VS = ±15V
30
80
VS = ±15V
TA = 25°C
0
–20
–15
125
60
40
–50 –25
5
Input Offset Current vs
Temperature
VS = ±15V
20
10
1007/37 G20
Input Bias Current vs
Temperature
50
DEVICE WITH POSITIVE
INPUT CURRENT
–15
+1
40
103
POWER SUPPLY REJECTION RATIO (dB)
INPUT BIAS CURRENT (nA)
120
20
–1
COMMON MODE LIMIT (V)
REFERRED TO POWER SUPPLY
COMMON MODE REJECTION RATIO (dB)
Input Bias Current Over the
Common Mode Range
0.001
10
100
10k
1k
FREQUENCY (Hz)
100k
1M
1007/37 G26
40
30
– 55°C
25°C
20
125°C
10
0
VS = ±15V
–10
–20
125°C
–30
25°C
–40
– 55°C
–50
2
1
0
3
TIME FROM OUTPUT SHORT TO GROUND (MINUTES)
1007/37 G27
sn100737 100737fbs
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LT1007/LT1037
U W
TYPICAL PERFORMANCE CHARACTERISTICS
LT1037 Small-Signal
Transient Response
LT1037 Phase Margin, Gain
Bandwidth Product, Slew Rate vs
Temperature
0V
0V
– 50mV
– 10V
PHASE MARGIN (DEG)
10V
20
VS = ±15V
CL = 100pF
60
70
PHASE MARGIN
50
60
AVCL = 5
VS = ±15V
CL = 15pF
GBW
AVCL = 5
VS = ±15V
1007/37 G29
1007/37 G28
50
SLEW
15
10
–50
–25
50
25
0
75
TEMPERATURE (°C)
GAIN BANDWIDTH PROCUCT, fO = 10kHz (MHz)
50mV
70
SLEW RATE (V/µs)
LT1037 Large-Signal Response
125
100
1007/37 G30
LT1037 Gain, Phase Shift
vs Frequency
20
150
GAIN
160
AV = 5
170
10
100
110
120
130
20
PHASE
140
GAIN
10
150
160
170
0
180
0
0.1
1
10
FREQUENCY (MHz)
190
100
SLEW RATE (V/µs) PHASE MARGIN (DEG)
140
30
VOLTAGE GAIN (dB)
130
PHASE
30
VS = ±15V
TA = 25°C
CL = 100pF
PHASE SHIFT (DEG)
120
PHASE SHIFT (DEG)
VOLTAGE GAIN (dB)
40
70
90
40
180
–10
0.1
1007/37 G31
60
PHASE MARGIN
9
50
GBW
8
3
SLEW
7
2
1
–50
190
100
1
10
FREQUENCY (MHz)
VS = ±15V
CL = 100pF
–25
50
0
75
25
TEMPERATURE (°C)
LT1007 Small-Signal
Transient Response
125
100
1007/37 G32
GAIN BANDWIDTH PROCUCT, fO = 100kHz (MHz)
90
VS = ±15V
100
TA = 25°C
CL = 100pF 110
50
LT1007 Phase Margin, Gain
Bandwidth Product, Slew Rate vs
Temperature
LT1007 Gain, Phase Shift
vs Frequency
1007/37 G33
Maximum Undistorted Output
vs Frequency
LT1007 Large-Signal Response
5V
50mV
0V
0V
– 50mV
– 5V
AVCL = 1
VS = ±15V
CL = 15pF
AVCL = – 1
VS = ±15V
1007/37 G34
1007/37 G35
PEAK-TO-PEAK OUTPUT VOLTAGE (V)
28
VS = ±15V
TA = 25°C
24
20
16
LT1007
12
LT1037
8
4
0
1k
10k
100k
1M
FREQUENCY (Hz)
10M
1007/37 G36
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LT1007/LT1037
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APPLICATIONS INFORMATION
General
Offset Voltage and Drift
The LT1007/LT1037 series devices may be inserted
directly into OP-07, OP-27, OP-37 and 5534 sockets with
or without removal of external compensation or nulling
components. In addition, the LT1007/LT1037 may be
fitted to 741 sockets with the removal or modification of
external nulling components.
Thermocouple effects, caused by temperature gradients
across dissimilar metals at the contacts to the input
terminals, can exceed the inherent drift of the amplifier
unless proper care is exercised. Air currents should be
minimized, package leads should be short, the two input
leads should be close together and maintained at the same
temperature.
Offset Voltage Adjustment
The input offset voltage of the LT1007/LT1037 and its drift
with temperature, are permanently trimmed at wafer
testing to a low level. However, if further adjustment of
VOS is necessary, the use of a 10kΩ nulling potentiometer
will not degrade drift with temperature. Trimming to a
value other than zero creates a drift of (VOS / 300)µV/°C,
e.g., if VOS is adjusted to 300µV, the change in drift will be
1µV/°C (Figure 1).
The circuit shown to measure offset voltage is also used
as the burn-in configuration for the LT1007/LT1037, with
the supply voltages increased to ±20V (Figure 3).
50k*
15V
2
100Ω*
3
The adjustment range with a 10kΩ pot is approximately
±2.5mV. If less adjustment range is needed, the sensitivity
and resolution of the nulling can be improved by using a
smaller pot in conjunction with fixed resistors. The example has an approximate null range of ±200µV
(Figure 2).
10k
15V
–
2
1
8
LT1007
INPUT
7
6
OUTPUT
+LT1037
3
4
–15V
1007/37 F01
Figure 1. Standard Adjustment
1k
15V
4.7k
–
7
6
LT1007
LT1037
+
4
50k*
–15V
VOUT
VOUT = 1000VOS
*RESISTORS MUST HAVE LOW
THERMOELECTRIC POTENTIAL
1007/37 F03
Figure 3. Test Circuit for Offset Voltage and
Offset Voltage Drift with Temperature
Unity-Gain Buffer Application (LT1007 Only)
When RF ≤ 100Ω and the input is driven with a fast, largesignal pulse (>1V), the output waveform will look as
shown in the pulsed operation diagram (Figure 4).
During the fast feedthrough-like portion of the output, the
input protection diodes effectively short the output to the
input and a current, limited only by the output short-circuit
protection, will be drawn by the signal generator. With
RF ≥ 500Ω, the output is capable of handling the current
requirements (IL ≤ 20mA at 10V) and the amplifier stays
in its active mode and a smooth transition will occur.
4.7k
2
3
–
1
RF
8
LT1007
LT1037
7 6
OUTPUT
–
+
2.8V/µs
OUTPUT
4
+
–15V
LT1007
1007/37 F02
Figure 2. Improved Sensitivity Adjustment
1007/37 F04
Figure 4. Pulsed Operation
sn100737 100737fbs
9
LT1007/LT1037
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APPLICATIONS INFORMATION
As with all operational amplifiers when RF > 2k, a pole will
be created with RF and the amplifier’s input capacitance,
creating additional phase shift and reducing the phase
margin. A small capacitor (20pF to 50pF) in parallel with RF
will eliminate this problem.
Noise Testing
The 0.1Hz to 10Hz peak-to-peak noise of the LT1007/
LT1037 is measured in the test circuit shown (Figure 5a).
The frequency response of this noise tester (Figure 5b)
indicates that the 0.1Hz corner is defined by only one zero.
The test time to measure 0.1Hz to 10Hz noise should not
exceed ten seconds, as this time limit acts as an additional
zero to eliminate noise contributions from the frequency
band below 0.1Hz.
Measuring the typical 60nV peak-to-peak noise performance of the LT1007/LT1037 requires special test
precautions:
electric effects in excess of a few nanovolts, which
would invalidate the measurements.
3. Sudden motion in the vicinity of the device can also
“feedthrough” to increase the observed noise.
A noise voltage density test is recommended when measuring noise on a large number of units. A 10Hz noise
voltage density measurement will correlate well with a
0.1Hz to 10Hz peak-to-peak noise reading since both
results are determined by the white noise and the location
of the 1/f corner frequency.
Current noise is measured in the circuit shown in Figure 6
and calculated by the following formula:
1/ 2
2

2
 eno − 130nV • 101 

in = 
1MΩ 101
)
( ) (
( )( )
1. The device should be warmed up for at least five
minutes. As the op amp warms up, its offset voltage
changes typically 3µV due to its chip temperature
increasing 10°C to 20°C from the moment the power
supplies are turned on. In the ten-second measurement
interval these temperature-induced effects can easily
exceed tens of nanovolts.
100k
100Ω
500k
–
500k
+LT1037
LT1007
eno
1007/37 F06
2. For similar reasons, the device must be well shielded
from air currents to eliminate the possibility of thermo-
Figure 6
0.1µF
100
90
100k
80
–
*
LT1007
LT1037
+
2k
+
4.3k
SCOPE
×1
RIN = 1M
LT1001
4.7µF
–
VOLTAGE GAIN
= 50,000
*DEVICE UNDER TEST
NOTE: ALL CAPACITOR VALUES ARE FOR
NONPOLARIZED CAPACITORS ONLY
22µF
2.2µF
GAIN (dB)
10Ω
70
60
50
110k
100k
40
24.3k
0.1µF
1007/37 F05a
30
0.01
0.1
1
10
FREQUENCY (Hz)
100
1007/37F05b
Figure 5a. 0.1Hz to 10Hz Noise Test Circuit
Figure 5b. 0.1Hz to 10Hz Peak-toPeak Noise Tester Frequency
Response
sn100737 100737fbs
10
LT1007/LT1037
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APPLICATIONS INFORMATION
The LT1007/LT1037 achieve their low noise, in part, by
operating the input stage at 120µA versus the typical 10µA
of most other op amps. Voltage noise is inversely proportional while current noise is directly proportional to the
square root of the input stage current. Therefore, the
LT1007/LT1037’s current noise will be relatively high. At
low frequencies, the low 1/f current noise corner frequency (≈120Hz) minimizes current noise to some extent.
In most practical applications, however, current noise will
not limit system performance. This is illustrated in the
Total Noise vs Source Resistance plot in the Typical
Performance Characteristics section, where:
Total Noise = [(voltage noise)2 + (current noise • RS)2 +
(resistor noise)2]1/2
Three regions can be identified as a function of source
resistance:
(i) RS ≤ 400Ω. Voltage noise dominates
(ii) 400Ω ≤ RS ≤ 50k at 1kHz
400Ω ≤ RS ≤ 8k at 10Hz
(iii) RS > 50k at 1kHz
RS > 8k at 10Hz
}
}
Resistor noise
dominates
Current noise
dominates
Clearly the LT1007/LT1037 should not be used in region
(iii), where total system noise is at least six times higher
than the voltage noise of the op amp, i.e., the low voltage
noise specification is completely wasted.
U
TYPICAL APPLICATIONS
Gain Error vs Frequency
Closed-Loop Gain = 1000
Gain 1000 Amplifier with 0.01% Accuracy, DC to 5Hz
340k
1%
15k
5%
20k
TRIM
1
TYPICAL
PRECISION
OP AMP
15V
2
–
7
6
3
+
LT1037
4
INPUT
OUTPUT
RN60C FILM RESISTORS
–15V
THE HIGH GAIN AND WIDE BANDWIDTH OF THE LT1037 (AND LT1007) IS
USEFUL IN LOW FREQUENCY, HIGH CLOSED-LOOP GAIN AMPLIFIER
APPLICATIONS. A TYPICAL PRECISION OP AMP MAY HAVE AN OPEN-LOOP
GAIN OF ONE MILLION WITH 500kHz BANDWIDTH. AS THE GAIN ERROR
PLOT SHOWS, THIS DEVICE IS CAPABLE OF 0.1% AMPLIFYING ACCURACY
UP TO 0.3Hz ONLY. EVEN INSTRUMENTATION RANGE SIGNALS CAN VARY
AT A FASTER RATE. THE LT1037’S “GAIN PRECISION-BANDWIDTH
PRODUCT” IS 200 TIMES HIGHER AS SHOWN.
GAIN ERROR (%)
365Ω
1%
0.1
LT1007
LT1037
0.01
GAIN ERROR =
CLOSED-LOOP GAIN
OPEN-LOOP GAIN
0.001
0.1
1
10
FREQUENCY (Hz)
100
1007/37 TA03
sn100737 100737fbs
11
LT1007/LT1037
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TYPICAL APPLICATIONS
Precision Amplifier Drives 300Ω Load to ±10V
Microvolt Comparator with Hysteresis
100M
5%
20k
5%
340k
1%
15V
10k
TRIM
365Ω
1%
7
3
INPUT
+
8
6
LT1007
2
–
15k
1%
2
–
3
+
OUTPUT
LT1007
365Ω
1%
4
2
–
3
+
INPUT OFFSET VOLTAGE IS TYPICALLY CHANGED LESS
THAN 5µV DUE TO THE FEEDBACK.
15Ω
5%
15Ω
5%
6
–15V
POSITIVE FEEDBACK TO ONE OF THE NULLING TERMINALS
CREATES APPROXIMATELY 5µV OF HYSTERESIS.
OUTPUT CAN SINK 16mA.
6
OUTPUT
±10V
LT1037
RL
300Ω
INPUT
1007/37 TA04
THE ADDITION OF THE LT1007 DOUBLES THE AMPLIFIER’S OUTPUT DRIVE
TO ±33mA. GAIN ACCURACY IS 0.02%, SLIGHTLY DEGRADED COMPARED
TO ABOVE BECAUSE OF SELF-HEATING OF THE LT1037 UNDER LOAD.
1007/37 TA05
Infrared Detector Preamplifier
15V
+
10µF
10Ω
100µF
1k
+
33Ω
CHOPPED DETECTOR
OUTPUT
2N2219A
+
100µF
50mA
15V
267Ω*
100µF
3
+
IR RADIATION
OPTICAL
CHOPPER
PHOTOCONDUCTIVE
INFRARED DETECTOR
HgCdTe type
INFRA-RED ASSOCIATES, INC.
392Ω*
+
7
LT1007
2
–
4
–15V
6
OUTPUT TO
DEMODULATOR
392k*
SYNCHRONOUS
13Ω AT 77°K
392Ω*
*1% METAL FILM
1007/37 TA08
sn100737 100737fbs
12
LT1007/LT1037
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TYPICAL APPLICATIONS
Phono Preamplifier
Tape Head Amplifier
4.99k
100Ω
2
–
0.01µF
7.87k
15V
316k
100k
7
0.033µF
100Ω
6
100pF
3
+
47k
2
–
OUTPUT
LT1037
4
0.01µF
TAPE HEAD
INPUT
ALL RESISTORS METAL FILM
3
+
LT1037
6
OUTPUT
ALL RESISTORS METAL FILM
–15V
1007/37 TA07
MAG PHONO
INPUT
1007/37 TA06
W
W
SI PLIFIED SCHE ATIC
8
1
V+
7
Q4
Q3
Q7
450µA
3.4k
3.4k
750µA
240µA
Q28
Q8
Q6 V –
Q5
130pF
17k
17k
1.2k
1.2k
C1
Q18
Q9
Q27
Q17
Q10
20Ω
Q19
V–
NONINVERTING
INPUT (+)
750Ω
Q20
Q25
OUTPUT
6
Q26
Q1A
3
Q2A
Q1B
200Ω
Q2B
V+
80pF
Q13
20Ω
20pF
Q30
2
V+
Q22
Q11
INVERTING
INPUT (–)
Q12 Q15
Q16
Q23
Q29
Q24
500µA
C1 = 110pF FOR LT1007
C1 = 12pF FOR LT1037
240µA
120µA
200Ω
6k
200Ω
6k 50Ω
V–
4
1007/37 SD
sn100737 100737fbs
13
LT1007/LT1037
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PACKAGE DESCRIPTION
H Package
8-Lead TO-5 Metal Can (.200 Inch PCD)
(Reference LTC DWG # 05-08-1320)
0.335 – 0.370
(8.509 – 9.398)
DIA
0.305 – 0.335
(7.747 – 8.509)
0.040
(1.016)
MAX
0.050
(1.270)
MAX
0.165 – 0.185
(4.191 – 4.699)
SEATING
PLANE
GAUGE
PLANE
0.010 – 0.045*
(0.254 – 1.143)
REFERENCE
PLANE
0.500 – 0.750
(12.700 – 19.050)
0.016 – 0.021**
(0.406 – 0.533)
0.027 – 0.045
(0.686 – 1.143)
45°TYP
0.027 – 0.034
(0.686 – 0.864)
0.200
(5.080)
TYP
0.110 – 0.160
(2.794 – 4.064)
INSULATING
STANDOFF
*LEAD DIAMETER IS UNCONTROLLED BETWEEN THE REFERENCE PLANE
AND 0.045" BELOW THE REFERENCE PLANE
0.016 – 0.024
**FOR SOLDER DIP LEAD FINISH, LEAD DIAMETER IS
(0.406 – 0.610)
H8(TO-5) 0.200 PCD 0595
J8 Package
8-Lead CERDIP (Narrow .300 Inch, Hermetic)
(Reference LTC DWG # 05-08-1110)
CORNER LEADS OPTION
(4 PLCS)
0.023 – 0.045
(0.584 – 1.143)
HALF LEAD
OPTION
0.045 – 0.068
(1.143 – 1.727)
FULL LEAD
OPTION
0.005
(0.127)
MIN
0.405
(10.287)
MAX
8
7
6
5
0.025
(0.635)
RAD TYP
0.220 – 0.310
(5.588 – 7.874)
1
0.300 BSC
(0.762 BSC)
2
3
4
0.200
(5.080)
MAX
0.015 – 0.060
(0.381 – 1.524)
0.008 – 0.018
(0.203 – 0.457)
0° – 15°
NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE
OR TIN PLATE LEADS
0.045 – 0.065
(1.143 – 1.651)
0.014 – 0.026
(0.360 – 0.660)
0.100
(2.54)
BSC
0.125
3.175
MIN
J8 1298
OBSOLETE PACKAGES
sn100737 100737fbs
14
LT1007/LT1037
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PACKAGE DESCRIPTION
N8 Package
8-Lead PDIP (Narrow .300 Inch)
(Reference LTC DWG # 05-08-1510)
0.400*
(10.160)
MAX
8
7
6
5
1
2
3
4
0.255 ± 0.015*
(6.477 ± 0.381)
0.300 – 0.325
(7.620 – 8.255)
0.065
(1.651)
TYP
0.009 – 0.015
(0.229 – 0.381)
(
+0.035
0.325 –0.015
8.255
+0.889
–0.381
0.130 ± 0.005
(3.302 ± 0.127)
0.045 – 0.065
(1.143 – 1.651)
)
0.125
(3.175) 0.020
MIN
(0.508)
MIN
0.018 ± 0.003
0.100
(2.54)
BSC
(0.457 ± 0.076)
N8 1098
*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.010 INCH (0.254mm)
S8 Package
8-Lead Plastic Small Outline (Narrow .150 Inch)
(Reference LTC DWG # 05-08-1610)
0.189 – 0.197*
(4.801 – 5.004)
8
7
6
5
0.150 – 0.157**
(3.810 – 3.988)
0.228 – 0.244
(5.791 – 6.197)
SO8 1298
1
0.010 – 0.020
× 45°
(0.254 – 0.508)
0.008 – 0.010
(0.203 – 0.254)
0.053 – 0.069
(1.346 – 1.752)
0°– 8° TYP
0.016 – 0.050
(0.406 – 1.270)
0.014 – 0.019
(0.355 – 0.483)
TYP
*DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
**DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
2
3
4
0.004 – 0.010
(0.101 – 0.254)
0.050
(1.270)
BSC
sn100737 100737fbs
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
15
LT1007/LT1037
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TYPICAL APPLICATIO
Strain Gauge Signal Conditioner with Bridge Excitation
7.5V
5k
2.5V
3
7
+
6
LT1009 2
LT1007
–
4
–7.5V
REFERENCE
OUT
350Ω
BRIDGE
15V
3
301k*
–
ZERO
TRIM
10k
2
+
–
6
4
OUTPUT
0V TO 10V
1µF
301k*
GAIN
TRIM
50k
499Ω*
–15V
7
6
3
7
LT1007
7.5V
2
+
LT1007
*RN60C FILM RESISTOR
THE LT1007 IS CAPABLE OF PROVIDING EXCITATION CURRENT
DIRECTLY TO BIAS THE 350Ω BRIDGE AT 5V. WITH ONLY 5V ACROSS
THE BRIDGE (AS OPPOSED TO THE USUAL 10V) TOTAL POWER
DISSIPATION AND BRIDGE WARM-UP DRIFT IS REDUCED. THE BRIDGE
OUTPUT SIGNAL IS HALVED, BUT THE LT1007 CAN AMPLIFY THE
REDUCED SIGNAL ACCURATELY.
4
–7.5V
1007/37 TA09
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LT1028
Ultralow Noise Precision Op Amp
Lowest Noise 0.85nV/√Hz
LT1115
Ultralow Noise, Low distortion Audio Op Amp
0.002% THD, Max Noise 1.2mV/√Hz
LT1124/LT1125
Dual/Quad Low Noise, High Speed Precision Op Amps
Similar to LT1007
LT1126/LT1127
Dual/Quad Decompensated Low Noise, High Speed Precision Op Amps
Similar to LT1037
LT1498/LT1499
10MHz, 5V/µs, Dual/Quad Rail-to-Rail Input and Output
Precision C-LoadTM Op Amps
C-Load is a trademark of Linear Technology Corporation.
sn100737 100737fbs
16
Linear Technology Corporation
LT/CPI 1101 1.5K REV B • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
 LINEAR TECHNOLOGY CORPORATION 1985
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