PIN DIODE ◆High Power Handling ■Applications ◆Small Capacitance at Zero Bias, Extremely ●High Power Antenna Switch (25W output two-way radio) Small Reverse Bias ◆Small Series Order Resistance ◆Small Insertion Loss, High Isolation ◆Extremely Small Wave Distortion (TX sprious <-80dBc, RX intermodulation = -73dBc @ 90dB µ) ■Dimensions The XB15A407 PIN diode employs a high reliability glass package that is designed for solid state antenna switches used in commercial two-way radios. MAX 5.0 Unit : mm MAX 2.8 MAX 4.2 TYP 0.8 ■General Description MIN 28 MIN 28 JEDEC DO-41 ■Absolute Maximum Ratings Ta=25 OC SYMBOL PARAMETER RATINGS UNITS V RM Repetitive Peak Reverse Voltage 50 V VR Reverse Voltage I FSM * Forward Surge Current 50 2 V A P Power Dissipation 1 Tj Tstg Junction Temperature Storage Temperature W 175 O C -55 ~ 175 O C * t = 5sec ■Electrical Characteristics Ta=25 OC SYMBOL PARAMETER LIMITS TEST CONDITIONS MIN I R1 Reverse Current I R2 Forward Current UNITS V R = 50V MAX 10 V R = 45V 0.5 IF Ct Diode Capacitance V F = 1.0V V R = 0V, f = 100MHz r fs Forward Series Resistance I F = 50mA, f = 470MHz RP Parallel Resistance V R = 0V, f = 100MHz TYP 100 1.0 µA µA mA 1.6 2.0 0.65 0.8 6.0 15 pF Ω kΩ 1061 XB15A407 FORWARD CURRENT vs. FORWARD VOLTAGE REVERSE CURRENT vs. REVERSE VOLTAGE 1.E-01 1.E-06 100℃ 100℃ 1.E-07 75℃ 75℃ ＩF(A) 50℃ ＩR(A) 1.E-02 25℃ 1.E-08 50℃ 0℃ 1.E-03 25℃ 1.E-09 1.E-04 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.E-10 1.E+00 1.3 1.E+01 ＶF(V) 1.E+03 DIODE CAPACITANCE vs. REVERSE VOLTAGE FORWARD SERIES RESISTANCE vs. FORWARD CURRENT ｆ＝470ＭＨｚ Ta＝25℃ 1.E+02 1.E+02 ＶR(V) ｆ＝100ＭＨｚ Ta＝25℃ 1.E+01 1.E+00 Ｃｔ(pF) ｒｆｓ(Ω) 1.E+01 1.E-01 1.E+00 1.E-01 1.E-03 1.E-02 1.E-02 1.E-01 1.E-01 1.E+00 1.E+01 1.E+02 ＶR+0.65(V) ＩF(A) PARALLEL RESISTANCE vs. REVERSE VOLTAGE ｆ＝100ＭＨｚ Ta＝25℃ 1.E+05 ＲP(Ω) 1.E+04 1.E+03 15 1062 1.E+02 1.E-01 1.E+00 1.E+01 ＶR+0.65(V) 1.E+02