Cypress CY62127DV30LL-45ZSI 1 mb (64k x 16) static ram Datasheet

CY62127DV30
MoBL®
1 Mb (64K x 16) Static RAM
Features
• Very high speed: 45 ns
• Wide voltage range: 2.2V to 3.6V
• Pin compatible with CY62127BV
• Ultra-low active power
— Typical active current: 0.85 mA @ f = 1 MHz
— Typical active current: 5 mA @ f = fMAX
• Ultra-low standby power
• Easy memory expansion with CE and OE features
• Automatic power-down when deselected
• Packages offered in a 48-ball FBGA and a 44-lead TSOP
Type II
• Also available in Lead-Free 48-ball FBGA, and 44-lead
TSOP Type II packages
Functional
Description[1]
The CY62127DV30 is a high-performance CMOS static RAM
organized as 64K words by 16 bits. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL®) in
portable applications such as cellular telephones. The device
also has an automatic power-down feature that significantly
reduces power consumption by 90% when addresses are not
toggling. The device can be put into standby mode reducing
power consumption by more than 99% when deselected (CE
HIGH or both BHE and BLE are HIGH). The input/output pins
(I/O0 through I/O15) are placed in a high-impedance state
when: deselected (CE HIGH), outputs are disabled (OE
HIGH), both Byte High Enable and Byte Low Enable are
disabled (BHE, BLE HIGH) or during a write operation (CE
LOW and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is
written into the location specified on the address pins (A0
through A15). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O8 through I/O15) is written into the location
specified on the address pins (A0 through A15).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O8 to I/O15. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
Logic Block Diagram
DATA IN DRIVERS
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
64K x 16
RAM Array
2048 x 512
SENSE AMPS
ROW DECODER
10
I/O0 – I/O7
I/O8 – I/O15
BHE
WE
CE
OE
BLE
A12
A13
A14
A15
A11
COLUMN DECODER
Power -Down
Circuit
CE
BHE
BLE
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05229 Rev. *D
•
3901 North First Street
•
San Jose, CA 95134
•
408-943-2600
Revised February 2, 2005
CY62127DV30
MoBL®
Pin Configuration[2, 3]
TSOP II (Forward)
Top View
FBGA (Top View)
4
5
3
6
A1
A2
NC
A
A3
A4
CE
I/O0
B
A5
A6
I/O1
I/O2
C
1
2
BLE
OE
A0
I/O8
BHE
I/O9
I/O10
NC
VSS
I/O11
VCC
I/O12 DNU
A7
I/O3
VCC
D
NC
I/O4
VSS
E
I/O14
I/O13
A14
A15
I/O5
I/O6
F
I/O15
NC
A12
A13
WE
I/O7
G
NC
A8
A9
A10
A11
NC
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
A15
A14
A13
A12
NC
H
1
44
2
3
43
42
4
41
40
39
38
5
6
7
8
9
10
11
12
37
36
35
34
33
32
31
30
29
28
27
13
14
15
16
17
18
19
20
21
22
26
25
24
23
A5
A6
A7
OE
BHE
BLE
I/O15
I/O14
I/O13
I/O12
VSS
VCC
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
Product Portfolio
Power Dissipation
Operating, ICC (mA)
VCC Range (V)
f = 1 MHz
Standby, ISB2 (µA)
f = fMAX
Product
Min.
Typ.
Max.
Speed
(ns)
CY62127DV30L
2.2
3.0
3.6
45
45
0.85
1.5
6.5
13
1.5
4
2.2
3.0
3.6
55
0.85
1.5
5
10
1.5
5
55
0.85
1.5
5
10
1.5
4
2.2
3.0
3.6
70
0.85
1.5
5
10
1.5
5
70
0.85
1.5
5
10
1.5
4
CY62127DV30LL
CY62127DV30L
CY62127DV30LL
CY62127DV30L
CY62127DV30LL
Typ[4]
0.85
Max.
Typ.[4]
Max.
Typ.[4]
Max.
1.5
6.5
13
1.5
5
Notes:
2. NC pins are not connected to the die.
3. E3 (DNU) can be left as NC or Vss to ensure proper operation. (Expansion Pins on FBGA Package: E4 - 2M, D3 - 4M, H1 - 8M, G2 - 16M, H6 - 32M).
4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25C.
Document #: 38-05229 Rev. *D
Page 2 of 12
CY62127DV30
MoBL®
DC Input Voltage[5] ................................ −0.3V to VCC + 0.3V
Maximum Ratings
Output Current into Outputs (LOW)............................. 20 mA
(Above which the useful life may be impaired. For user guidelines, not tested.)
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Storage Temperature .................................. –65°C to +150°C
Latch-up Current..................................................... > 200 mA
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Operating Range
Supply Voltage to Ground Potential
......................................................................... −0.3V to 3.9V
DC Voltage Applied to Outputs
in High-Z State[5] ....................................−0.3V to VCC + 0.3V
Range
Ambient Temperature (TA)
VCC[6]
Industrial
–40°C to +85°C
2.2V to 3.6V
DC Electrical Characteristics (Over the Operating Range)
CY62127DV30-45 CY62127DV30-55 CY62127DV30-70
Parameter Description
Min. Typ.[4] Max. Min. Typ.[4] Max. Min. Typ.[4] Max. Unit
Test Conditions
VOH
Output HIGH 2.2 < VCC < 2.7 IOH = −0.1 mA
Voltage
2.7 < VCC < 3.6 IOH = −1.0 mA
VOL
Output LOW
Voltage
2.2 < VCC < 2.7 IOL = 0.1 mA
2.7 < VCC < 3.6 IOL = 2.1 mA
VIH
Input HIGH
Voltage
2.2 < VCC < 2.7
1.8
VCC 1.8
+ 0.3
VCC 1.8
+ 0.3
VCC
+ 0.3
2.7 < VCC < 3.6
2.2
VCC 2.2
+ 0.3
VCC 2.2
+ 0.3
VCC
+ 0.3
2.0
2.0
2.4
2.0
2.4
V
2.4
0.4
0.4
0.4
0.4
0.4
V
0.4
V
VIL
Input LOW
Voltage
2.2 < VCC < 2.7
−0.3
0.6
−0.3
0.6
−0.3
0.6
2.7 < VCC < 3.6
−0.3
0.8
−0.3
0.8
−0.3
0.8
IIX
Input
Leakage
Current
GND < VI < VCC
−1
+1
−1
+1
−1
+1
µA
IOZ
Output
Leakage
Current
GND < VO < VCC,
Output Disabled
−1
+1
−1
+1
−1
+1
µA
ICC
VCC
Operating
Supply
Current
f = fMAX = 1/tRC VCC = 3.6V,
IOUT = 0 mA,
f = 1 MHz
CMOS level
mA
Automatic CE
Power-down
Current—
CMOS Inputs
Automatic CE
Power-down
Current—
CMOS Inputs
ISB1
ISB2
6.5
13
5
10
5
10
0.85
1.5
0.85
1.5
0.85
1.5
CE > VCC − 0.2V,
L
VIN > VCC − 0.2V, VIN < 0.2V, LL
f = fMAX (Address and
Data Only),
f = 0 (OE, WE, BHE and
BLE)
1.5
5
1.5
5
1.5
5
1.5
4
1.5
4
1.5
4
CE > VCC − 0.2V,
VIN > VCC − 0.2V or
VIN < 0.2V,
f = 0, VCC = 3.6V
L
1.5
5
1.5
5
1.5
5
LL
1.5
4
1.5
4
1.5
4
V
µA
µA
Notes:
5. VIL(min.) = −2.0V for pulse durations less than 20 ns., VIH(max.) = VCC+0.75V for pulse durations less than 20 ns.
6. Full device Operation Requires linear Ramp of VCC from 0V to VCC(min) & VCC must be stable at VCC(min) for 500 µs.
Document #: 38-05229 Rev. *D
Page 3 of 12
CY62127DV30
MoBL®
Capacitance[7]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
pF
Output Capacitance
TA = 25°C, f = 1 MHz
VCC = VCC(typ)
8
COUT
8
pF
Thermal Resistance
Parameter
Description
Test Conditions
θJA
Thermal Resistance (Junction to Ambient)[7]
Still Air, soldered on a 3 x 4.5 inch,
two-layer printed circuit board
θJC
Thermal Resistance (Junction to Case)
[7]
FBGA TSOP II Unit
55
76
°C/W
12
11
°C/W
AC Test Loads and Waveforms[8]
R1
VCC
OUTPUT
ALL INPUT PULSES
VCC Typ
GND
R2
CL = 50 pF
90%
10%
90%
Rise Time:
1 V/ns
INCLUDING
JIG AND
SCOPE
Equivalent to:
Fall Time:
1 V/ns
THÉVENIN EQUIVALENT
OUTPUT
Parameters
R1
R2
RTH
VTH
10%
RTH
VTH
3.0V (2.7 – 3.6V)
1103
1554
645
1.75
2.5V (2.2– 2.7V)
16600
15400
8000
1.2
Unit
Ω
Ω
Ω
V
Data Retention Characteristics
Parameter
Description
Conditions
VDR
VCC for Data Retention
ICCDR
Data Retention Current
tCDR[7]
Chip Deselect to Data
Retention Time
tR[9]
Operation Recovery Time
Min.
Typ.[4]
Max.
Unit
4
µA
1.5
VCC=1.5V, CE > VCC − 0.2V,
VIN > VCC − 0.2V or VIN < 0.2V
V
L
LL
3
0
ns
200
µs
Data Retention Waveform[10]
VCC
V
CC(min.)
tCDR
DATA RETENTION MODE
VDR > 1.5V
V CC(min.)
tR
CE or
BHE. BLE
Notes:
7. Tested initially and after any design or proces changes that may affect these parameters.
8. Test condition for the 45-ns part is a load capacitance of 30 pF.
9. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 200 µs.
10. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the Chip Enable signals or by disabling both.
Document #: 38-05229 Rev. *D
Page 4 of 12
CY62127DV30
MoBL®
Switching Characteristics (Over the Operating Range)[11]
CY62127DV30-45 [8]
Parameter
Description
Min.
Max.
CY62127DV30-55
Min.
Max.
CY62127DV30-70
Min.
Max.
Unit
Read Cycle
tRC
Read Cycle Time
45
55
tAA
Address to Data Valid
tOHA
Data Hold from Address Change
tACE
CE LOW to Data Valid
45
55
70
ns
tDOE
OE LOW to Data Valid
25
25
35
ns
25
ns
45
[12]
tLZOE
OE LOW to Low Z
tHZOE
OE HIGH to High Z[12,14]
tLZCE
CE LOW to Low Z[12]
10
55
10
5
10
70
10
ns
10
ns
tHZCE
CE HIGH to High
tPU
CE LOW to Power-up
tPD
CE HIGH to Power-down
45
55
70
ns
tDBE
BLE/BHE LOW to Data Valid
45
55
70
ns
tLZBE[13]
tHZBE
BLE/BHE LOW to Low
BLE/BHE HIGH to
0
Z[12]
0
5
High-Z[12,14]
20
ns
ns
5
20
20
ns
10
5
15
Z[12,14]
70
0
5
15
25
ns
5
20
ns
ns
25
ns
Write Cycle[15]
tWC
Write Cycle Time
45
55
70
ns
tSCE
CE LOW to Write End
40
40
60
ns
tAW
Address Set-up to Write End
40
40
60
ns
tHA
Address Hold from Write End
0
0
0
ns
tSA
Address Set-up to Write Start
0
0
0
ns
tPWE
WE Pulse Width
35
40
50
ns
tBW
BLE/BHE LOW to Write End
40
40
60
ns
tSD
Data Set-up to Write End
25
25
30
ns
tHD
Data Hold from Write End
0
0
0
ns
tHZWE
tLZWE
WE LOW to High
Z[12,14]
[12]
WE HIGH to Low Z
15
10
20
10
25
5
ns
ns
Notes:
11. Test conditions assume signal transition time of 1V/ns or less, timing reference levels of VCC(typ.)/2, input pulse levels of 0 to VCC(typ.), and output loading of the
specified IOL.
12. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any
given device.
13. If both byte enables are toggled together, this value is 10 ns.
14. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high-impedance state.
15. The internal Write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE = VIL. All signals must be ACTIVE to initiate a write and any
of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates
the write.
Document #: 38-05229 Rev. *D
Page 5 of 12
CY62127DV30
MoBL®
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled)[16,17]
tRC
ADDRESS
tOHA
DATA OUT
tAA
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE Controlled)[16,17, 18]
Notes:
16. Device is continuously selected. OE, CE = VIL, BHE, BLE = VIL.
17. WE is HIGH for Read cycle.
18. Address valid prior to or coincident with CE, BHE, BLE transition LOW.
Document #: 38-05229 Rev. *D
Page 6 of 12
CY62127DV30
MoBL®
Switching Waveforms (continued)
Write Cycle No. 1 (WE Controlled)[14, 15, 19, 20, 21]
tWC
ADDRESS
tSCE
CE
tAW
tHA
tSA
tPWE
WE
tBW
BHE/BLE
OE
tSD
DATA I/O
tHD
DATAIN VALID
DON'T CARE
tHZOE
Write Cycle No. 2 (CE Controlled)[14, 15, 19, 20, 21]
tWC
ADDRESS
tSCE
CE
tSA
tAW
tHA
tPWE
WE
tBW
BHE / BLE
OE
tSD
DATA I/O
tHD
DATA IN VALID
DON'T CARE
tHZOE
Notes:
19. Data I/O is high-impedance if OE = VIH.
20. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
21. During the DON'T CARE period in the DATA I/O waveform, the I/Os are in output state and input signals should not be applied.
Document #: 38-05229 Rev. *D
Page 7 of 12
CY62127DV30
MoBL®
Switching Waveforms (continued)
Write Cycle No. 3 (WE Controlled, OE LOW)[ 20, 21]
tWC
ADDRESS
tSCE
CE
tBW
BHE/BLE
tAW
tHA
tSA
tPWE
WE
tHD
tSD
DATA I/O
DATAIN VALID
DON'T CARE
tLZWE
tHZWE
Write Cycle No. 4 (BHE-/BLE-controlled, OE
LOW)[20, 21]
tWC
ADDRESS
CE
tSCE
tAW
tHA
tBW
BHE/BLE
tSA
tPWE
WE
tSD
DATA I/O
DON'T CARE
Document #: 38-05229 Rev. *D
tHD
DATAIN VALID
Page 8 of 12
CY62127DV30
MoBL®
Truth Table
CE
WE
OE
BHE
BLE
I/O0–I/O7
I/O8–I/O15
Mode
Power
H
X
X
X
X
High Z
High Z
Deselect/Power-down
Standby (I SB )
X
X
X
H
H
High Z
High Z
Deselect/Power-down
Standby (I SB )
L
H
L
L
L
Data Out
Data Out
Read All bits
Active (I CC )
L
H
L
H
L
Data Out
High Z
Read Lower Byte Only
Active (I CC )
L
H
L
L
H
High Z
Data Out
Read Upper Byte Only
Active (I CC )
L
H
H
L
L
High Z
High Z
Output Disabled
Active (I CC )
L
H
H
H
L
High Z
High Z
Output Disabled
Active (I CC )
L
H
H
L
H
High Z
High Z
Output Disabled
Active (I CC )
L
L
X
L
L
Data In
Data In
Write
Active (I CC )
L
L
X
H
L
Data In
High Z
Write Lower Byte Only
Active (I CC )
L
L
X
L
H
High Z
Data In
Write Upper Byte Only
Active (I CC )
Ordering Information
Speed
(ns)
Ordering Code
Package
Name
Package Type
Operating
Range
45
CY62127DV30LL-45BVI
BV48A
48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm)
Industrial
CY62127DV30LL-45BVXI
BV48A
48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm) (Pb-Free)
CY62127DV30LL-45ZSI
ZS44
44-lead TSOP Type II
55
70
CY62127DV30LL-45ZSXI
ZS44
44-lead TSOP Type II (Pb-Free)
CY62127DV30L-55BVI
BV48A
48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm)
CY62127DV30LL-55BVI
BV48A
48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm)
CY62127DV30LL-55BVXI
BV48A
48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm) (Pb-Free)
CY62127DV30L-55ZSI
ZS44
44-lead TSOP Type II
CY62127DV30L-55ZSXI
ZS44
44-lead TSOP Type II (Pb-Free)
CY62127DV30LL-55ZSI
ZS44
44-lead TSOP Type II
CY62127DV30L-70BVI
BV48A
48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm)
CY62127DV30LL-70BVI
BV48A
48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm)
CY62127DV30LL-70BVXI
BV48A
48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm) (Pb-Free)
CY62127DV30L-70ZSI
ZS44
44-lead TSOP Type II
CY62127DV30LL-70ZSI
ZS44
44-lead TSOP Type II
Document #: 38-05229 Rev. *D
Industrial
Industrial
Page 9 of 12
CY62127DV30
MoBL®
Package Diagrams
48-Lead VFBGA (6 x 8 x 1 mm) BV48A
51-85150-*B
Document #: 38-05229 Rev. *D
Page 10 of 12
CY62127DV30
MoBL®
Package Diagrams
44-pin TSOP II ZS44
51-85087-*A
MoBL is a registered trademark, and MoBL2 and More Battery Life are trademarks of Cypress Semiconductor. All product and
company names mentioned in this document are the trademarks of their respective holders.
Document #: 38-05229 Rev. *D
Page 11 of 12
© Cypress Semiconductor Corporation, 2005. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY62127DV30
MoBL®
Document History Page
Document Title: CY62127DV30 MoBL 1 Mb (64K x 16) Static RAM
Document Number: 38-05229
REV.
ECN NO. Issue Date
Orig. of
Change
Description of Change
**
117690
08/27/02
JUI
*A
127311
06/13/03
MPR
Changed From Advanced Status to Preliminary
Changed Isb2 to 5 µA (L), 4 µA (LL)
Changed Iccdr to 4 µA (L), 3 µA (LL)
Changed Cin from 6 pF to 8 pF
*B
128341
07/22/03
JUI
Changed from Preliminary to Final
Add 70-ns speed, updated ordering information
*C
129000
08/29/03
CDY
Changed Icc 1 MHz typ from 0.5 mA to 0.85 mA
*D
316039
See ECN
PCI
Added 45-ns Speed Bin in AC, DC and Ordering Information tables
Added Footnote # 8 on page #4
Added Lead-Free Package ordering information on page# 9
Changed 44-lead TSOP-II package name from Z44 to ZS44
Document #: 38-05229 Rev. *D
New Data Sheet
Page 12 of 12
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