NTB23N03R Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features 23 AMPERES, 25 VOLTS RDS(on) = 32 mW (Typ) • Pb−Free Packages are Available Typical Applications • • • • • N−CHANNEL Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters D G S MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 25 Vdc Gate−to−Source Voltage − Continuous VGS ±20 Vdc ID ID Drain Current − Continuous @ TA = 25°C, Limited by Chip − Continuous @ TA = 25°C, Limited by Package − Single Pulse (tp = 10 ms) IDM 23 6.0 60 Total Power Dissipation @ TA = 25°C PD 37.5 W TJ, Tstg −55 to 150 °C RqJC 3.3 °C/W TL 260 °C Operating and Storage Temperature Range Thermal Resistance − Junction−to−Case Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds MARKING DIAGRAM & PIN ASSIGNMENTS A 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 4 Drain 4 T23 N03G AYWW 2 3 D2PAK CASE 418B STYLE 2 T23N03 A Y WW G 1 Gate 2 Drain 3 Source = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 2 1 Publication Order Number: NTB23N03R/D NTB23N03R ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Characteristics Symbol Min Typ Max 25 − 28 − − − − − − − 1.0 10 − − ±100 1.0 − 1.8 − 2.0 − − − 50.3 32.3 60 45 − 14 − Ciss − 225 − Coss − 108 − Crss − 48 − td(on) − 2.0 − tr − 14.9 − td(off) − 9.9 − tf − 2.0 − QT − 3.76 − Q1 − 1.7 − Q2 − 1.6 − − − 0.87 0.74 1.2 − trr − 8.7 − ta − 5.2 − tb − 3.5 − QRR − 0.003 − Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 1) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(br)DSS Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (Note 1) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 1) (VGS = 4.5 Vdc, ID = 6 Adc) (VGS = 10 Vdc, ID = 6 Adc) RDS(on) Forward Transconductance (Note 1) (VDS = 10 Vdc, ID = 6 Adc) Vdc mV/°C mW gFS Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 20 Vdc, VGS = 0 V, f = 1 MHz) Transfer Capacitance pF SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Rise Time (VGS = 10 Vdc, VDD = 10 Vdc, ID = 6 Adc, RG = 3 W) Turn−Off Delay Time Fall Time Gate Charge (VGS = 4.5 Vdc, ID = 6 Adc, VDS = 10 Vdc) (Note 1) ns nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 6 Adc, VGS = 0 Vdc) (Note 1) (IS = 6 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = 6 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 1) Reverse Recovery Stored Charge VSD Vdc ns mC 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Package Shipping † NTB23N03R D2PAK 50 Units / Rail NTB23N03RG D2PAK 50 Units / Rail Device (Pb−Free) NTB23N03RT4 D2PAK 800 Units / Tape & Reel NTB23N03RT4G D2PAK 800 Units / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTB23N03R 20 4.5 V 8V 6V 16 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 20 10 V 4V 5V 3.5 V 12 8 3V 4 VGS = 2.5 V 0 2 4 6 8 12 8 TJ = 25°C 4 10 TJ = −55°C TJ = 125°C 0 1 2 3 4 5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.20 VGS = 10 V 0.16 0.12 0.08 TJ = 125°C TJ = 25°C 0.04 TJ = −55°C 0 0 4 8 12 16 20 6 0.20 VGS = 4.5 V 0.16 0.12 TJ = 125°C 0.08 TJ = 25°C 0.04 TJ = −55°C 0 0 4 8 12 16 20 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current and Temperature Figure 4. On−Resistance versus Drain Current and Temperature 10,000 1.8 1.6 VGS = 0 V ID = 6 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 16 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VDS ≥ 10 V 1.4 1.2 1 1000 TJ = 150°C TJ = 125°C 100 0.8 0.6 −50 10 −25 0 25 50 75 100 125 150 0 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 25 400 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) NTB23N03R TJ = 25°C VDS = 0 V VGS = 0 V C, CAPACITANCE (pF) Ciss 300 Crss Ciss 200 Coss 100 Crss 0 10 VGS 0 VDS 5 5 10 15 20 VGS 6 QT 4 Q2 Q1 2 ID = 6 A TJ = 25°C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 100 10 IS, SOURCE CURRENT (AMPS) VDS = 10 V ID = 6 A VGS = 10 V t, TIME (ns) 8 tr td(off) 10 td(on) tf 1 VGS = 0 V 8 6 4 TJ = 150°C 2 TJ = 25°C 0 1 10 100 0 0.2 0.4 0.6 0.8 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 1.0 NTB23N03R PACKAGE DIMENSIONS D2PAK CASE 418AA−01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C E V W −B− 4 DIM A B C D E F G J K M S V A 1 2 S 3 −T− SEATING PLANE K W J G D 3 PL 0.13 (0.005) T B M STYLE 2: PIN 1. 2. 3. 4. M VARIABLE CONFIGURATION ZONE U M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.036 0.045 0.055 0.310 −−− 0.100 BSC 0.018 0.025 0.090 0.110 0.280 −−− 0.575 0.625 0.045 0.055 M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.92 1.14 1.40 7.87 −−− 2.54 BSC 0.46 0.64 2.29 2.79 7.11 −−− 14.60 15.88 1.14 1.40 NTB23N03R ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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