ONSEMI 1SMB20CAT3G

1SMB10CAT3 Series
Watt Peak Power Zener
Transient Voltage
Suppressors
Bidirectional*
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The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetict package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
10−78 V, 600 W PEAK POWER
Features
•
•
•
•
•
•
•
•
•
Working Peak Reverse Voltage Range − 10 V to 75 V
Standard Zener Breakdown Voltage Range − 11.7 V to 91.7 V
Peak Power − 600 Watts @ 1 ms
ESD Rating of Class 3 (> 16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 mA Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
Pb−Free Packages are Available
SMB
CASE 403C
PLASTIC
MARKING DIAGRAM
ALYW
xxCG
G
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS: Modified L−Bend providing more contact area to bond pads
POLARITY: Polarity band will not be indicated
MOUNTING POSITION: Any
A
Y
WW
xxC
= Assembly Location
= Year
= Work Week
= Specific Device Code
= (See Table on Page 3)
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device*
1SMBxxCAT3
1SMBxxCAT3G
Package
Shipping †
SMB
2500/Tape & Reel
SMB
(Pb−Free)
2500/Tape & Reel
*The “T3” suffix refers to a 13 inch reel.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Individual devices are listed on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 9
1
Publication Order Number:
1SMB10CAT3/D
1SMB10CAT3 Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1)
@ TL = 25°C, Pulse Width = 1 ms
PPK
600
W
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
PD
3.0
W
RqJL
40
25
mW/°C
°C/W
RqJA
0.55
4.4
226
W
mW/°C
°C/W
TJ, Tstg
−65 to +150
°C
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
PD
Operating and Storage
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive
2. 1″ square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec
*Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices
ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
IT
IPP
IT
VC VBR VRWM IR
IR VRWM VBR VC
IT
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
IPP
Test Current
Bi−Directional TVS
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2
V
1SMB10CAT3 Series
ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Device*
Device
Marking
Breakdown Voltage
VRWM
(Note 4)
IR @ VRWM
Volts
mA
Min
Nom
VC @ IPP (Note 6)
@ IT
VC
IPP
Ctyp
(Note 7)
Max
mA
Volts
Amps
pF
VBR (Note 5) Volts
1SMB10CAT3, G
1SMB11CAT3, G
1SMB12CAT3, G
1SMB13CAT3, G
KXC
KZC
LEC
LGC
10
11
12
13
5.0
5.0
5.0
5.0
11.1
12.2
13.3
14.4
11.69
12.84
14.00
15.16
12.27
13.5
14.7
15.9
1.0
1.0
1.0
1.0
17.0
18.2
19.9
21.5
35.3
33.0
30.2
27.9
805
740
680
630
1SMB14CAT3, G
1SMB15CAT3, G
1SMB16CAT3, G
1SMB17CAT3, G
LKC
LMC
LPC
LRC
14
15
16
17
5.0
5.0
5.0
5.0
15.6
16.7
17.8
18.9
16.42
17.58
18.74
19.90
17.2
18.5
19.7
20.9
1.0
1.0
1.0
1.0
23.2
24.4
26.0
27.6
25.8
24.0
23.1
21.7
590
555
520
490
1SMB18CAT3, G
1SMB20CAT3, G
1SMB22CAT3, G
1SMB24CAT3, G
LTC
LVC
LXC
LZC
18
20
22
24
5.0
5.0
5.0
5.0
20.0
22.2
24.4
26.7
21.06
23.37
25.69
28.11
22.1
24.5
27.0
29.5
1.0
1.0
1.0
1.0
29.2
32.4
35.5
38.9
20.5
18.5
16.9
15.4
465
425
390
366
1SMB26CAT3, G
1SMB28CAT3, G
1SMB30CAT3, G
1SMB33CAT3, G
MEC
MGC
MKC
MMC
26
28
30
33
5.0
5.0
5.0
5.0
28.9
31.1
33.3
36.7
30.42
32.74
35.06
38.63
31.9
34.4
36.8
40.6
1.0
1.0
1.0
1.0
42.1
45.4
48.4
53.3
14.2
13.2
12.4
11.3
330
310
290
265
1SMB36CAT3, G
1SMB40CAT3, G
1SMB43CAT3, G
1SMB45CAT3, G
MPC
MRC
MTC
MVC
36
40
43
45
5.0
5.0
5.0
5.0
40.0
44.4
47.8
50.0
42.11
46.74
50.32
52.63
44.2
49.1
52.8
55.3
1.0
1.0
1.0
1.0
58.1
64.5
69.4
72.2
10.3
9.3
8.6
8.3
245
220
210
200
1SMB48CAT3, G
1SMB51CAT3, G
1SMB54CAT3, G
1SMB58CAT3, G
MXC
MZC
NEC
NGC
48
51
54
58
5.0
5.0
5.0
5.0
53.3
56.7
60.0
64.4
56.11
59.69
63.16
67.79
58.9
62.7
66.32
71.18
1.0
1.0
1.0
1.0
77.4
82.4
87.1
93.6
7.7
7.3
6.9
6.4
190
175
170
155
1SMB60CAT3, G
1SMB64CAT3, G
1SMB75CAT3, G
NKC
NMC
NRC
60
64
75
5.0
5.0
5.0
66.7
71.1
83.3
70.21
74.84
91.65
73.72
78.58
92.07
1.0
1.0
1.0
96.8
103
121
6.2
5.8
4.9
150
145
125
4. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
5. VBR measured at pulse test current IT at an ambient temperature of 25°C.
6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data − 600 Watt at the beginning of this group.
7. Bias Voltage = 0 V, F = 1 MHz, TJ = 25°C
*The “G” suffix indicates Pb−Free package available.
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3
1SMB10CAT3 Series
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO 50%
OF IPP.
tr≤ 10 ms
100
10
PEAK VALUE − IPP
VALUE (%)
PPK, PEAK POWER (kW)
100
I
HALF VALUE − PP
2
50
1
tP
0.1
0.1 ms
1 ms
10 ms
100 ms
1 ms
0
10 ms
0
1
tP, PULSE WIDTH
4
5
Figure 2. Pulse Waveform
160
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA = 25° C
3
t, TIME (ms)
Figure 1. Pulse Rating Curve
1000
1SMB10CAT3G
140
C, CAPACITANCE (pF)
120
100
80
60
40
1SMB18CAT3G
1SMB48CAT3G
100
1SMB75CAT3G
10
20
0
2
0
25
50
75
100
125
150
TJ = 25°C
f = 1 MHz
1
1
10
BIAS VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Pulse Derating Curve
100
Figure 4. Typical Junction Capacitance vs. Bias
Voltage
TYPICAL PROTECTION CIRCUIT
Zin
LOAD
Vin
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4
VL
1SMB10CAT3 Series
APPLICATION NOTES
RESPONSE TIME
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 4.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 5. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 6. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 6 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 6 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
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5
1SMB10CAT3 Series
V
V
Vin (TRANSIENT)
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
Vin (TRANSIENT)
VL
VL
Vin
td
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 5.
Figure 6.
1
0.7
DERATING FACTOR
0.5
0.3
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
100 ms
0.02
10 ms
0.01
0.1 0.2
0.5
1
2
5
10
D, DUTY CYCLE (%)
20
50 100
Figure 7. Typical Derating Factor for Duty Cycle
UL RECOGNITION
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning,
Temperature
test,
Dielectric
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
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6
1SMB10CAT3 Series
PACKAGE DIMENSIONS
SMB
CASE 403C−01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
S
A
D
INCHES
DIM MIN
MAX
A
0.160
0.180
B
0.130
0.150
C
0.075
0.095
D
0.077
0.083
H 0.0020 0.0060
J
0.006
0.012
K
0.030
0.050
P
0.020 REF
S
0.205
0.220
B
MILLIMETERS
MIN
MAX
4.06
4.57
3.30
3.81
1.90
2.41
1.96
2.11
0.051
0.152
0.15
0.30
0.76
1.27
0.51 REF
5.21
5.59
C
K
P
J
H
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SURMETIC is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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1SMB10CAT3/D