DMN5L06DWK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance (1.0V max) Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected up to 2kV "Green" Device (Note 4) Qualified to AEC-Q101 standards for High Reliability Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.006 grams (approximate) • • • • • • SOT-363 ESD protected up to 2kV TOP VIEW Maximum Ratings D2 G1 S1 S2 G2 D1 TOP VIEW Internal Schematic @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Unit V V ID Value 50 ±20 305 800 Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Symbol PD RθJA Value 250 500 Unit mW °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) Thermal Characteristics Continuous Pulsed (Note 3) @TA = 25°C unless otherwise specified Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. 5. mA @TA = 25°C unless otherwise specified @ TC = 25°C Symbol Min Typ Max Unit BVDSS IDSS 50 ⎯ ⎯ ⎯ ⎯ 60 V nA IGSS ⎯ ⎯ 1 500 50 μA nA nA VGS(th) 0.49 V 3.0 2.5 2.0 Ω ID(ON) |Yfs| VSD ⎯ ⎯ ⎯ ⎯ 1.4 ⎯ ⎯ 1.0 ⎯ ⎯ ⎯ 0.5 200 0.5 ⎯ ⎯ 1.4 A mS V Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 50 25 5.0 pF pF pF RDS (ON) Test Condition VGS = 0V, ID = 10μA VDS = 50V, VGS = 0V VGS = ±12V, VDS = 0V VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V VDS = VGS, ID = 250μA VGS = 1.8V, ID = 50mA VGS = 2.5V, ID = 50mA VGS = 5.0V, ID = 50mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA VDS = 25V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN5L06DWK Document number: DS30930 Rev. 4 - 2 1 of 4 www.diodes.com November 2007 © Diodes Incorporated NEW PRODUCT DMN5L06DWK VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 10 0 -50 75 100 125 150 -25 25 50 0 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 1 0 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 10 1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN5L06DWK Document number: DS30930 Rev. 4 - 2 2 of 4 www.diodes.com VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage November 2007 © Diodes Incorporated IDR, REVERSE DRAIN CURRENT (A) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) IDR, REVERSE DRAIN CURRENT (A) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current 250 PD, POWER DISSIPATION (mW) NEW PRODUCT DMN5L06DWK 200 150 100 50 0 -50 0 50 100 TA, AMBIENT TEMPERATURE (°C) Fig. 11 Derating Curve - Total DMN5L06DWK Document number: DS30930 Rev. 4 - 2 150 3 of 4 www.diodes.com November 2007 © Diodes Incorporated DMN5L06DWK Ordering Information (Note 6) Part Number DMN5L06DWK-7 Notes: Case SOT-363 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. NEW PRODUCT Marking Information DAB = Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year Code 2006 T Month Code Jan 1 2007 U Feb 2 2008 V Mar 3 Apr 4 May 5 2009 W Jun 6 2010 X Jul 7 Aug 8 2011 Y Sep 9 Oct O 2012 Z Nov N Dec D Package Outline Dimensions A SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 ⎯ K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 0° 8° α All Dimensions in mm B C H K M J D L F Suggested Pad Layout E Z E C G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN5L06DWK Document number: DS30930 Rev. 4 - 2 4 of 4 www.diodes.com November 2007 © Diodes Incorporated