NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw (SPDT) switch featuring low RDS(on) of 4.5 at 3.0 V. The device also features guaranteed Break−Before−Make (BBM) switching, assuring the switches never short the driver. The NLAS4717EP is available in two small size packages: Microbump: 2.0 x 1.5 mm WQFN−10: 1.4 x 1.8 mm http://onsemi.com MARKING DIAGRAMS Features • • • • • • • • • • Microbump−10 CASE 489AA Low RDS(on): 4.5 @ 3.0 V Matching Between the Switches ±0.5 Wide Voltage Range: 1.8 V to 5.5 V High Bandwidth > 90 MHz 1.65 V to 5.5 V Operating Range Low Threshold Voltages on Pins 4 and 8 (CTRL Pins) Ultra−Low Charge Injection ≤ 6.0 pC Low Standby Current: ICC = 1.0 nA (Max) @ TA = 25°C *OVT on Pins 4 and 8 (CTRL Logic Pins) These are Pb−Free Devices A1 A = Assembly Location Y = Year W, WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) AWMG G 1 WQFN−10 CASE 488AQ AW = Specific Device Code M = Date Code G = Pb−Free Device (Note: Microdot may be in either location) Typical Applications • • • • • 4717EP AYWWG G A1 Cell Phones PDAs MP3s Digital Still Cameras USB 2.0 Full Speed (USB1.1) − 12 Mbps Compliant FUNCTION TABLE Important Information • ESD Protection: IN_ NO_ NC_ 0 1 OFF ON ON OFF HBM = 2500 V, MM = 200 V • Latchup Max Rating: 200 mA (Per JEDEC EIA/JESD78) • Pin−to−Pin Compatible with MAX4717 ORDERING INFORMATION Device *OVT • Overvoltage Tolerant (OVT) specific pins operate higher than normal supply voltages, with no damage to the devices or to signal integrity. Package Shipping † 3000 / NLAS4717EPFCT1G Microbump−10 Tape & Reel (Pb−Free) NLAS4717EPMTR2G WQFN−10 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 5 1 Publication Order Number: NLAS4717EP/D NLAS4717EP GND NO1 VCC 2 1 B1 NC1 C1 A1 NC2 IN1 C2 A2 IN2 COM1 C3 A3 COM2 NO1 C4 A4 NO2 COM1 3 10 NO2 IN1 4 9 COM2 NC1 5 8 IN2 B4 6 7 VCC GND NC2 Microbump (Top View) WQFN (Top View) Figure 1. Device Circuit Diagrams and Pin Configurations MAXIMUM RATINGS Symbol Parameter Value Unit *0.5 to )7.0 V *0.5 v VIS v VCC )0.5 V *0.5 v VI v)7.0 V V+ DC Supply Voltage VIS Analog Input Voltage (VNO, VNC, or VCOM) (Note 1) VIN Digital Select Input Voltage IIK DC Current, Into or Out of Any Pin (Continuous) $100 mA IPK Peak Current (10% Duty Cycle) $200 mA Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Signal voltage on NC, NO, and COM exceeding VCC or GND are clamped by the internal diodes. Limit forward diode current to maximum current rating. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit 1.8 5.5 V V+ DC Supply Voltage VIN Digital Select Input Voltage GND 5.5 V VIS Analog Input Voltage (NC, NO, COM) GND VCC V TA Operating Temperature Range −40 +85 °C tr, tf Input Rise or Fall Time, SELECT 0 0 100 20 ns/V VCC = 3.3 V $ 0.3 V VCC = 5.0 V $ 0.5 V http://onsemi.com 2 NLAS4717EP ANALOG SWITCH DC CHARACTERISTICS −40°C to +85°C Symbol Parameter Condition VCC (V) Min Max Unit VIH Input Logic High Voltage VOUT = 0.1 V 1.65 to 2.2 VCC x 0.55 − V IOUT ≤ 20 A 2.7 to 3.6 VCC x 0.5 − 4.5 to 5.5 2.0 − VOUT = −VCC − 0.1 V 1.65 to 2.2 − VCC x 0.2 IOUT ≤ 20 A 2.7 to 3.6 − VCC x 0.2 4.5 to 5.5 − 0.8 VIL Input Logic Low Voltage V IIN Input Leakage Current VIN = VCC or GND 5.5 −100 +100 nA VCC Power Supply Range All − 1.65 5.5 V ICC Supply Current VIN = VCC or GND 1.8 − 1.0 A IOUT = 0 A 3.3 − 1.0 5.5 − 1.0 ANALOG SWITCH CHARACTERISTICS − Digital Section (Voltages Referenced to GND) −40°C to +85°C Symbol Parameter Condition VCC (V) Min Typ Max Unit RON ON Resistance (Note 2) ICOM = 10 mA VIS = 0 to VCC 3.0 − 3.2 4.5 5.0 − 2.1 3.5 3.0 − 0.1 0.4 5.0 − 0.1 0.4 3.0 − 1.12 1.5 5.0 − 0.55 1.36 3.6 −1.0 0.01 +1.0 5.5 −1.0 0.01 +1.0 3.6 −2.0 0.01 +2.0 5.5 −2.0 0.01 +2.0 RON RFLAT[ON] INO_[OFF] INC_[OFF] ON Resistance Match Between Channels (Note 2 and 3) ON Resistance Flatness (Note 4) NO_, NC_ Off−Leakage Current (Note 5) ICOM = 10 mA VIS = 0 to VCC ICOM = 10 mA VIS = 0 to VCC VCOM = 0.3 V or 3.3 V nA VNO or VNC = 0.3 V or 3.3 V VCOM = 0 V or 5.0 V VNO or VNC = 0 V or 5.0 V ICOM_[ON] COM_ On−Leakage Current (Note 5) VCOM = 0.3 V or 3.3 V VNO or VNC = 0.3 V or 3.3 V VCOM = 0 V or 5.0 V VNO or VNC = 0 V or 5.0 V http://onsemi.com 3 nA NLAS4717EP ANALOG SWITCH AC CHARACTERISTICS −40°C to +85°C Symbol Parameter Condition VCC (V) Min Typ Max Unit tON Turn−On Time VNC_, VNO_ = VIH or VIL 1.8 to 5.5 − − 30 nS 1.8 to 5.5 − − 40 nS − − 8.0 − nS − − 0.15 2.0 nS Max Unit RL = 300 , CL = 35 pF VIN[x] = VIH or VIL tOFF Turn−Off Time VNC_, VNO_ = VIH or VIL RL = 300 , CL = 35 pF VIN[x] = VIH or VIL tBBM tSKEW 2. 3. 4. 5. Break−Before−Make Time Delay (Note 5) Skew (Note 5) VNC_, VNO_ = 1.5 V RL = 300 , CL = 35 pF RS = 39 , CL = 50 pF RON characterized for VCC range (1.65 V to 5.5 V). RON = RON(MAX) − RON(MIN). RFLAT[ON] = RON(MAX) − RON(MIN), measured over VCC range. Guaranteed by design. ANALOG SWITCH APPLICATION CHARACTERISTICS −40°C to +85°C Symbol Parameter Q Charge Injection Min Typ Condition VCC (V) VIN = VCC to GND 3.0 6.0 RIn = 0 , CL = 1.0 nF 5.0 9.0 1.65 to 5.5 −70 pC Q = CL − VOUT VISO Off−Isolation f = 10 MHz dB VNO_, VNC_ = 1.0 Vp−p RL = 50 , CL = 5.0 pF f = 1.0 MHz −110 VNO_, VNC_ = 1.0 Vp−p RL = 50 , CL = 5.0 pF VCT Cross−Talk f = 10 MHz 1.65 to 5.5 −35 dB VNO_, VNC_ = 1.0 Vp−p RL = 50 , CL = 5.0 pF f = 1.0 MHz −53 VNO_, VNC_ = 1.0 Vp−p RL = 50 , CL = 5.0 pF BW On−Channel −3.0 db Bandwidth Signal = 0 dB 1.8 to 5.0 90 MHz RL = 50 , CL = 5.0 pF THD Total Harmonic Distortion VCOM = 2.0 Vp−p, RL = 600 TA = 25°C − 0.02 % CNO_[OFF] CNC_[OFF] NO_, NC_ OFF−Capacitance F = 1.0 MHz − 15 pF CNO_[ON] CNC_[ON] NO_, NC_ ON−Capacitance F = 1.0 MHz − 38 pF http://onsemi.com 4 NLAS4717EP 3.0 2.0 2.5 +85°C +25°C 1.0 RDS(on) () RDS(on) () 1.5 −40°C 2.0 +85°C 1.5 +25°C 1.0 −40°C 0.5 0.5 0.0 0.0 1.0 2.0 3.0 4.0 0.0 0.0 5.0 0.5 1.0 VCOM (V) 2.5 3.0 Figure 3. RDS(on) @ VCC = 3.0 V 1.5 1.5 1.4 1.4 1.3 1.3 RDS(on) () RDS(on) () 2.0 VCOM (V) Figure 2. RDS(on) @ VCC = 5.0 V 1.2 1.1 1.0 1.5 1.2 1.1 3.0 V 1.0 5.0 V 0.9 0.9 0.8 −40C +25C 0.8 −40C +85C +25C TEMPERATURE (°C) +85C TEMPERATURE (°C) Figure 4. Delta RDS(on) @ VCC = 5.0 V Figure 5. Delta RDS(on) @ VCC = 3.0 V 8 1 6 4 Q (cP) THD (%) 5.0 V 2 0 3.0 V −2 0.1 −4 −6 −8 −10 0.0 3.0 V 0.01 1.0 2.0 3.0 4.0 5.0 10 100 1000 10000 VCOM (V) FREQUENCY (Hz) Figure 6. Charge Injection Figure 7. Total Harmonic Distortion http://onsemi.com 5 100000 NLAS4717EP 0 10 (dB) 20 VCC = 1.65 V to 5.5 V −20 −10 degress −40 (dB) 0 −60 Cross−Talk −80 Bandwidth −3 dB 0 −45 Phase −30 deg −100 −120 −140 0.001 VCC = 3.0 V to 5.0 V TA = −40°C to +85°C OFF−Isolation 0.01 0.1 1 10 100 0.1 1 10 100 (MHz) (MHz) Figure 8. Frequency Response Figure 9. Bandwidth and Phase http://onsemi.com 6 1000 NLAS4717EP VCC DUT VCC Input Output GND VOUT 0.1 F 300 tBMM 35 pF 90% 90% of VOH Output Switch Select Pin GND Figure 10. tBBM (Time Break−Before−Make) VCC Input DUT VCC 0.1 F 50% Output VOUT Open 50% 0V 300 VOH 90% 35 pF 90% Output VOL Input tON tOFF Figure 11. tON/tOFF VCC VCC Input DUT Output 300 50% VOUT Open 50% 0V VOH 35 pF Output 10% VOL Input tOFF Figure 12. tON/tOFF http://onsemi.com 7 10% tON NLAS4717EP 50 DUT Reference Transmitted Input Output 50 Generator 50 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. ǒVVOUT Ǔ for VIN at 100 kHz IN VOUT Ǔ for VIN at 100 kHz to 50 MHz VONL = On Channel Loss = 20 Log ǒ VIN VISO = Off Channel Isolation = 20 Log Bandwidth (BW) = the frequency 3.0 dB below VONL VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50 Figure 13. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT VCC VIN Output Open GND CL Output Off VIN Figure 14. Charge Injection: (Q) http://onsemi.com 8 On Off VOUT NLAS4717EP PACKAGE DIMENSIONS Microbump−10 CASE 489AA−01 ISSUE A D 4X A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS. 0.10 C E PIN ONE CORNER A1 0.10 C A2 A 0.075 C C SEATING PLANE D1 e 10 X b 0.15 C A B 0.05 C C E1 B A 1 2 3 4 e http://onsemi.com 9 MILLIMETERS DIM MIN MAX A −−− 0.650 A1 0.210 0.270 A2 0.280 0.380 D 1.965 BSC E 1.465 BSC b 0.250 0.350 e 0.500 BSC D1 1.500 BSC E1 1.000 BSC NLAS4717EP PACKAGE DIMENSIONS WQFN10, 1.4x1.8x0.4P CASE 488AQ−01 ISSUE B D ÉÉ ÉÉ PIN 1 REFERENCE 2X 2X 0.15 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. EXPOSED PADS CONNECTED TO DIE FLAG. USED AS TEST CONTACTS. A E 0.15 C DIM A A1 A3 b D E e L L1 B A 0.10 C 0.08 C SEATING PLANE MILLIMETERS MIN MAX 0.70 0.80 0.00 0.050 0.20 REF 0.15 0.25 1.40 BSC 1.80 BSC 0.40 BSC 0.30 0.50 0.40 0.60 A1 A3 3 5 C MOUNTING FOOTPRINT e/2 9XL 1.700 0.0669 6 e 1 0.663 0.0261 10 L1 10 X b 0.200 0.0079 0.10 C A B 0.05 C 9X 0.563 0.0221 1 2.100 0.0827 NOTE 3 0.400 0.0157 PITCH 10 X 0.225 0.0089 SCALE 20:1 mm Ǔ ǒinches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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