ONSEMI MMBT5087LT1

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by MMBT5087LT1/D
SEMICONDUCTOR TECHNICAL DATA
COLLECTOR
3
PNP Silicon
Motorola Preferred Device
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
3
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
–50
Vdc
Collector–Base Voltage
VCBO
–50
Vdc
Emitter–Base Voltage
VEBO
–3.0
Vdc
IC
–50
mAdc
Collector Current — Continuous
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
DEVICE MARKING
MMBT5087LT1 = 2Q
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
RθJA
556
°C/W
PD
300
mW
2.4
mW/°C
RθJA
417
°C/W
TJ, Tstg
– 55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–50
—
Vdc
Collector–Base Breakdown Voltage
(IC = –100 µAdc, IE = 0)
V(BR)CBO
–50
—
Vdc
—
—
–10
–50
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = –10 Vdc, IE = 0)
(VCB = –35 Vdc, IE = 0)
ICBO
nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
MMBT5087LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
250
250
250
800
—
—
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –100 µAdc, VCE = –5.0 Vdc)
(IC = –1.0 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc)
hFE
—
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
VCE(sat)
—
–0.3
Vdc
Base–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
VBE(sat)
—
0.85
Vdc
fT
40
—
MHz
Cobo
—
4.0
pF
Small–Signal Current Gain
(IC = –1.0 mAdc, VCE = –5.0 Vdc, f = 1.0 kHz)
hfe
250
900
—
Noise Figure
(IC = –20 mAdc, VCE = –5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz)
(IC = –100 µAdc, VCE = –5.0 Vdc, RS = 3.0 kΩ, f = 1.0 kHz)
NF
—
—
2.0
2.0
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –500 µAdc, VCE = –5.0 Vdc, f = 20 MHz)
Output Capacitance
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
2
dB
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBT5087LT1
TYPICAL NOISE CHARACTERISTICS
(VCE = – 5.0 Vdc, TA = 25°C)
ā
10
7.0
IC = 10 µA
5.0
In, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
30 µA
3.0
100 µA
300 µA
1.0 mA
2.0
BANDWIDTH = 1.0 Hz
RS ≈ ∞
IC = 1.0 mA
3.0
2.0
300 µA
1.0
0.7
0.5
100 µA
30 µA
0.3
0.2
1.0
10 µA
0.1
10
20
50
100 200
500 1.0 k
f, FREQUENCY (Hz)
2.0 k
5.0 k
10
10 k
20
50
Figure 1. Noise Voltage
100 200
500 1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k
10 k
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(VCE = – 5.0 Vdc, TA = 25°C)
1.0 M
500 k
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
ā
5.0 dB
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (µA)
1.0 M
500 k
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
500 700 1.0 k
5.0 dB
10
20
RS , SOURCE RESISTANCE (OHMS)
Figure 3. Narrow Band, 100 Hz
1.0 M
500 k
30
50 70 100
200 300
IC, COLLECTOR CURRENT (µA)
500 700 1.0 k
Figure 4. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
200 k
100 k
50 k
ƪ
Noise Figure is Defined as:
20 k
10 k
NF
0.5 dB
5.0 k
2.0 k
1.0 k
500
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200
100
10
20
30
50 70 100
200 300
+ 20 log10
en2
ƫ
) 4KTRS ) In 2RS2 1ń2
4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10–23 j/°K)
T = Temperature of the Source Resistance (°K)
RS = Source Resistance (Ohms)
500 700 1.0 k
IC, COLLECTOR CURRENT (µA)
Figure 5. Wideband
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
MMBT5087LT1
100
1.0
TA = 25°C
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
TYPICAL STATIC CHARACTERISTICS
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
TA = 25°C
PULSE WIDTH = 300 µs
80 DUTY CYCLE ≤ 2.0%
300 µA
150 µA
40
100 µA
50 µA
20
0
5.0 10
0
20
5.0
10
15
20
25
30
35
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltages
4
40
Figure 7. Collector Characteristics
1.4
0.2
250 µA
200 µA
60
Figure 6. Collector Saturation Region
0.1
IB = 400 µA
350 µA
50
100
1.6
*APPLIES for IC/IB ≤ hFE/2
0.8
*qVC for VCE(sat)
25°C to 125°C
0
– 55°C to 25°C
0.8
25°C to 125°C
1.6
2.4
0.1
qVB for VBE
0.2
– 55°C to 25°C
0.5
1.0 2.0
5.0
10 20
IC, COLLECTOR CURRENT (mA)
50
100
Figure 9. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBT5087LT1
TYPICAL DYNAMIC CHARACTERISTICS
1000
700
500
500
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
300
ā
ts
300
200
100
70
50
t, TIME (ns)
t, TIME (ns)
200
30
tr
20
100
70
50
10
7.0
5.0
1.0
tf
30
td @ VBE(off) = 0.5 V
20
2.0
3.0
20 30
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
50 70
10
–1.0
100
– 2.0 – 3.0 – 5.0 – 7.0 –10
– 20 – 30
IC, COLLECTOR CURRENT (mA)
ā
ā
ā
ā
ā
ā
– 50 – 70 –100
ā
ā
Figure 11. Turn–Off Time
500
10
TJ = 25°C
TJ = 25°C
7.0
VCE = 20 V
300
Cib
C, CAPACITANCE (pF)
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
Figure 10. Turn–On Time
5.0 V
200
100
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
VCC = – 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
5.0
3.0
2.0
Cob
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.1
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 12. Current–Gain — Bandwidth Product
Figure 13. Capacitance
1.0
0.7
0.5
10
20
50
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 16
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–569)
ZθJA(t) = r(t) • RθJA
TJ(pk) – TA = P(pk) ZθJA(t)
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
Figure 14. Thermal Response
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
MMBT5087LT1
104
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
IC, COLLECTOR CURRENT (nA)
VCC = 30 V
10–1
A train of periodical power pulses can be represented by the model
as shown in Figure 16. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 14 was calculated for various duty cycles.
To find Z θJA(t), multiply the value obtained from Figure 14 by the
steady state value RθJA.
Example:
Dissipating 2.0 watts peak under the following conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
10–2
The peak rise in junction temperature is therefore
∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
103
ICEO
102
101
ICBO
AND
ICEX @ VBE(off) = 3.0 V
100
–4
0
–2
0
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
TJ, JUNCTION TEMPERATURE (°C)
For more information, see AN–569.
Figure 15. Typical Collector Leakage Current
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBT5087LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T J(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA . Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
7
MMBT5087LT1
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
B S
1
V
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
J
K
CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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8
◊
*MMBT5087LT1/D*
Motorola Small–Signal Transistors, FETs and DiodesMMBT5087LT1/D
Device Data