ONSEMI MC74HCT373ADW

MC74HCT373A
Octal 3-State Noninverting
Transparent Latch with
LSTTL-Compatible Inputs
High–Performance Silicon–Gate CMOS
The MC74HCT373A may be used as a level converter for
interfacing TTL or NMOS outputs to High–Speed CMOS inputs.
The HCT373A is identical in pinout to the LS373.
The eight latches of the HCT373A are transparent D–type latches.
While the Latch Enable is high the Q outputs follow the Data Inputs.
When Latch Enable is taken low, data meeting the setup and hold
times becomes latched.
The Output Enable does not affect the state of the latch, but when
Output Enable is high, all outputs are forced to the high–impedance
state. Thus, data may be latched even when the outputs are not
enabled.
The HCT373A is identical in function to the HCT573A, which has
the input pins on the opposite side of the package from the output pins.
This device is similar in function to the HCT533A, which has
inverting outputs.
•
•
•
•
•
•
•
Output Drive Capability: 15 LSTTL Loads
TTL/NMOS–Compatible Input Levels
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 4.5 to 5.5 V
Low Input Current: 1.0 µA
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 196 FETs or 49 Equivalent Gates
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MARKING
DIAGRAMS
20
PDIP–20
N SUFFIX
CASE 738
20
MC74HCT373AN
AWLYYWW
1
20
1
20
1
SOIC WIDE–20
DW SUFFIX
CASE 751D
HCT373A
AWLYYWW
1
20
HCT
373A
ALYW
TSSOP–20
DT SUFFIX
CASE 948G
20
1
1
A
WL
YY
WW
= Assembly Location
= Wafer Lot
= Year
= Work Week
PIN ASSIGNMENT
ENABLE A
1
20
VCC
A1
2
19
ENABLE B
YB4
3
18
YA1
A2
4
17
B4
YB3
5
16
YA2
A3
6
15
B3
YB2
7
14
YA3
A4
8
13
B2
YB1
9
12
YA4
GND
10
11
B1
ORDERING INFORMATION
Device
MC74HCT373AN
MC74HCT373ADW
Package
Shipping
PDIP–20
1440 / Box
SOIC–WIDE
MC74HCT373ADWR2 SOIC–WIDE
 Semiconductor Components Industries, LLC, 2000
March, 2000 – Rev. 8
1
38 / Rail
1000 / Reel
MC74HCT373ADT
TSSOP–20
75 / Rail
MC74HCT373ADTR2
TSSOP–20
2500 / Reel
Publication Order Number:
MC74HCT373A/D
MC74HCT373A
PIN ASSIGNMENT
LOGIC DIAGRAM
D0
D1
D2
DATA
INPUTS
D3
D4
D5
D6
D7
LATCH ENABLE
OUTPUT ENABLE
3
2
4
5
7
6
8
9
13
12
14
15
17
16
18
19
11
1
20
VCC
2
19
Q7
D0
3
18
D7
D1
4
17
D6
Q1
5
16
Q6
Q1
Q2
6
15
Q5
Q2
D2
7
14
D5
D3
8
13
D4
Q3
9
12
Q4
10
11
LATCH
ENABLE
Q3
NONINVERTING
OUTPUTS
Q4
GND
Q5
Q6
FUNCTION TABLE
Q7
Inputs
PIN 20 = VCC
PIN 10 = GND
Value
Units
Internal Gate Count*
49
ea.
Internal Gate Propagation Delay
1.5
ns
Internal Gate Power Dissipation
5.0
µW
.0075
pJ
Speed Power Product
1
Q0
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Design Criteria
OUTPUT
ENABLE
Q0
*Equivalent to a two–input NAND gate.
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2
Output
Output
Enable
Latch
Enable
D
Q
L
L
L
H
H
H
L
X
H
L
X
X
H
L
No Change
Z
X = don’t care
Z = high impedance
MC74HCT373A
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MAXIMUM RATINGS*
Symbol
VCC
Parameter
DC Supply Voltage (Referenced to GND)
Value
Unit
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 35
mA
ICC
DC Supply Current, VCC and GND Pins
± 75
mA
PD
Power Dissipation in Still Air,
750
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
Iin
TL
Plastic DIP†
SOIC Package†
TSSOP Package†
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
v
v
_C
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC, SSOP or TSSOP Package)
260
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
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RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
Min
Max
Unit
4.5
5.5
V
0
VCC
V
– 55
+ 125
_C
0
500
ns
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time (Figure 1)
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
V
– 55 to
25_C
85_C
125_C
Unit
VIH
Minimum High–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V
VIL
Maximum Low–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V
Minimum High–Level Output
Voltage
Vin = VIH or VIL
|Iout|
20 µA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
Vin = VIH or VIL
|Iout|
6.0 mA
4.5
3.98
3.84
3.7
Vin = VIH or VIL
|Iout|
20 µA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
Vin = VIH or VIL
|Iout|
6.0 mA
4.5
0.26
0.33
0.4
Maximum Input Leakage
Current
Vin = VCC or GND
5.5
± 0.1
± 1.0
± 1.0
µA
IOZ
Maximum Three–State
Leakage Current
Output in High–Impedance State
Vin = VIL or VIH
Vout = VCC or GND
5.5
± 0.5
± 5.0
± 10
µA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 µA
5.5
4.0
40
160
µA
VOH
VOL
Iin
Maximum Low–Level Output
Voltage
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3
V
MC74HCT373A
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∆ICC
Additional Quiescent Supply
Current
Vin = 2.4 V, Any One Input
Vin = VCC or GND,
GND Other In
Inputs
uts
lout = 0 µA
5.5
≥ –55_C
25_C to 125_C
2.9
2.4
mA
NOTE: 1. Total Supply Current = ICC + Σ∆ICC.
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book
(DL129/D).
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AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
Symbol
– 55 to
25_C
Parameter
85_C
125_C
Unit
tPLH,
tPHL
Maximum Propagation Delay, Input D to Q
(Figures 1 and 5)
28
35
42
ns
tPLH,
tPHL
Maximum Propagation Delay, Latch Enable to Q
(Figures 2 and 5)
32
40
48
ns
tPLZ,
tPHZ
Maximum Propagation Delay, Output Enable to Q
(Figures 3 and 6)
30
38
45
ns
tPZL,
tPZH
Maximum Propagation Delay, Output Enable to Q
(Figures 3 and 6)
35
44
53
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 5)
12
15
18
ns
Maximum Input Capacitance
10
10
10
pF
Maximum Three–State Output Capacitance
(Output in High–Impedance State)
15
15
15
pF
Cin
Cout
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Per Latch)*
pF
65
* Used to determine the no–load dynamic power consumption: P D = C PD V CC 2 f + I CC V CC . For load considerations, see Chapter 2 of the
ON Semiconductor High–Speed CMOS Data Book (DL129/D).
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TIMING REQUIREMENTS (VCC = 5.0 V ± 10%, Input tr = tf = 6.0 ns)
Guaranteed Limit
Symbol
– 55 to
25_C
Parameter
85_C
125_C
Unit
tsu
Minimum Setup Time, Input D to Latch Enable
(Figure 4)
10
13
15
ns
th
Minimum Hold Time, Latch Enable to Input D
(Figure 4)
10
13
15
ns
tw
Minimum Pulse Width, Latch Enable
(Figure 2)
12
15
18
ns
tr, tf
Maximum Input Rise and Fall Times
(Figure 1)
500
500
500
ns
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4
MC74HCT373A
EXPANDED LOGIC DIAGRAM
D0
3
D1
4
D
Q
D2
7
D
LE
Q
D3
8
D
LE
Q
D4
13
D
LE
Q
D5
14
D
LE
Q
D6
17
D
LE
Q
D7
18
D
LE
Q
D
LE
Q
LE
LATCH 11
ENABLE
OUTPUT 1
ENABLE
2
Q0
5
Q1
6
Q2
9
Q3
12
Q4
15
Q5
16
Q6
19
Q7
SWITCHING WAVEFORMS
tr
tf
INPUT D
tw
3V
2.7 V
1.3 V
0.3 V
LATCH ENABLE
GND
tPLH
GND
tPHL
Q
tTLH
3V
GND
tPLZ
VALID
3V
HIGH
IMPEDANCE
1.3 V
tPZH
Q
Figure 2.
1.3 V
tPZL
Q
1.3 V
tTHL
Figure 1.
OUTPUT
ENABLE
tPHL
tPLH
90%
1.3 V
10%
Q
3V
1.3 V
1.3 V
10%
VOL
90%
VOH
INPUT D
GND
tsu
tPHZ
1.3 V
1.3 V
LATCH ENABLE
th
3V
1.3 V
GND
HIGH
IMPEDANCE
Figure 3.
Figure 4.
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5
MC74HCT373A
TEST CIRCUITS
TEST POINT
TEST POINT
OUTPUT
OUTPUT
DEVICE
UNDER
TEST
DEVICE
UNDER
TEST
CL*
1 kΩ
CL*
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ AND tPZH.
*Includes all probe and jig capacitance
*Includes all probe and jig capacitance
Figure 5.
Figure 6.
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6
MC74HCT373A
PACKAGE DIMENSIONS
PDIP–20
N SUFFIX
PLASTIC DIP PACKAGE
CASE 738–03
ISSUE E
–A–
20
11
1
10
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
B
L
C
–T–
K
SEATING
PLANE
M
N
E
G
F
J
D
20 PL
0.25 (0.010)
20 PL
0.25 (0.010)
M
T A
M
T B
M
M
DIM
A
B
C
D
E
F
G
J
K
L
M
N
INCHES
MIN
MAX
1.010
1.070
0.240
0.260
0.150
0.180
0.015
0.022
0.050 BSC
0.050
0.070
0.100 BSC
0.008
0.015
0.110
0.140
0.300 BSC
0_
15 _
0.020
0.040
MILLIMETERS
MIN
MAX
25.66
27.17
6.10
6.60
3.81
4.57
0.39
0.55
1.27 BSC
1.27
1.77
2.54 BSC
0.21
0.38
2.80
3.55
7.62 BSC
0_
15_
0.51
1.01
SO–20
DW SUFFIX
CASE 751D–05
ISSUE F
q
A
20
X 45 _
M
E
h
0.25
1
10
20X
B
B
0.25
M
T A
S
B
S
A
L
H
10X
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION SHALL
BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT
MAXIMUM MATERIAL CONDITION.
11
B
M
D
18X
e
A1
SEATING
PLANE
DIM
A
A1
B
C
D
E
e
H
h
L
q
C
T
http://onsemi.com
7
MILLIMETERS
MIN
MAX
2.35
2.65
0.10
0.25
0.35
0.49
0.23
0.32
12.65
12.95
7.40
7.60
1.27 BSC
10.05
10.55
0.25
0.75
0.50
0.90
0_
7_
MC74HCT373A
PACKAGE DIMENSIONS
20X
0.15 (0.006) T U
TSSOP–20
DT SUFFIX
CASE 948E–02
ISSUE A
K REF
0.10 (0.004)
S
M
T U
S
V
S
K
K1
2X
L/2
20
ÍÍÍÍ
ÍÍÍÍ
ÍÍÍÍ
11
J J1
B
–U–
L
PIN 1
IDENT
SECTION N–N
1
10
0.25 (0.010)
N
0.15 (0.006) T U
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS. MOLD
FLASH OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT
EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN
EXCESS OF THE K DIMENSION AT MAXIMUM
MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE –W–.
M
A
–V–
N
F
DETAIL E
–W–
C
D
G
H
DETAIL E
0.100 (0.004)
–T– SEATING
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
6.40
6.60
4.30
4.50
–––
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.27
0.37
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.252
0.260
0.169
0.177
–––
0.047
0.002
0.006
0.020
0.030
0.026 BSC
0.011
0.015
0.004
0.008
0.004
0.006
0.007
0.012
0.007
0.010
0.252 BSC
0_
8_
PLANE
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MC74HCT373A/D