ONSEMI MMFT960T1

MMFT960T1
Preferred Device
Power MOSFET
300 mA, 60 Volts
N–Channel SOT–223
This Power MOSFET is designed for high speed, low loss power
switching applications such as switching regulators, dc–dc converters,
solenoid and relay drivers. The device is housed in the SOT–223
package which is designed for medium power surface mount
applications.
• Silicon Gate for Fast Switching Speeds
• Low Drive Requirement
• The SOT–223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
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300 mA
60 VOLTS
RDS(on) = 1.7 N–Channel
D
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDS
60
Volts
Gate–to–Source Voltage – Non–Repetitive
VGS
±30
Volts
Drain Current
ID
300
mAdc
Total Power Dissipation @ TA = 25°C
(Note 1.)
Derate above 25°C
PD
0.8
Watts
6.4
mW/°C
Operating and Storage Temperature
Range
TJ, Tstg
–65 to
150
°C
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
S
MARKING
DIAGRAM
4
1
THERMAL CHARACTERISTICS
Thermal Resistance –
Junction–to–Ambient
G
RθJA
156
°C/W
TL
260
°C
10
Sec
2
TO–261AA
CASE 318E
STYLE 3
FT960
LWW
3
L
WW
1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum
recommended footprint.
= Location Code
= Work Week
PIN ASSIGNMENT
4 Drain
1
Gate
2
Drain
3
Source
ORDERING INFORMATION
Device
MMFT960T1
Package
SOT–223
Shipping
1000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 4
1
Publication Order Number:
MMFT960T1/D
MMFT960T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
60
–
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 60 V, VGS = 0)
IDSS
–
–
10
µAdc
Gate–Body Leakage Current
(VGS = 15 Vdc, VDS = 0)
IGSS
–
–
50
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
1.0
–
3.5
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 1.0 A)
RDS(on)
–
–
1.7
Ohms
Drain–to–Source On–Voltage
(VGS = 10 V, ID = 0.5 A)
(VGS = 10 V, ID = 1.0 A)
VDS(on)
–
–
–
–
0.8
1.7
gfs
–
600
–
mmhos
Ciss
–
65
–
pF
Coss
–
33
–
Crss
–
7.0
–
Qg
–
3.2
–
Qgs
–
1.2
–
Qgd
–
2.0
–
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 10 µA)
ON CHARACTERISTICS (Note 2.)
Forward Transconductance
(VDS = 25 V, ID = 0.5 A)
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 V
V, VGS = 0,
0
f = 1.0 MHz)
Output Capacitance
Transfer Capacitance
Total Gate Charge
(VGS = 10 V
V, ID = 1
1.0
0A
A,
VDS = 48 V)
Gate–Source Charge
Gate–Drain Charge
nC
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
TYPICAL ELECTRICAL CHARACTERISTICS
5
1
4
I D, DRAIN CURRENT (AMPS)
I D, DRAIN CURRENT (AMPS)
TJ = 25°C
VGS = 10 V
8V
3
7V
2
6V
5V
1
TJ = -55°C
0.8
TJ = 25°C
TJ = 125°C
0.6
0.4
VDS = 10 V
0.2
4V
0
0
2
4
6
8
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0
10
0
Figure 1. On–Region Characteristics
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
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2
10
MMFT960T1
RDS(on) , DRAIN-SOURCE RESISTANCE (NORMALIZED
RDS(on) , DRAIN-SOURCE RESISTANCE (OHMS)
TYPICAL ELECTRICAL CHARACTERISTICS
5
VGS = 10 V
4
3
TJ = 125°C
2
25°C
1
0
-55°C
0
1
1.5
2
ID, DRAIN CURRENT (AMPS)
0.5
2.5
Figure 3. On–Resistance versus Drain Current
10
ID = 1 A
VGS = 10 V
1
0.1
-75
-50
-25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (°C)
125
150
Figure 4. On–Resistance Variation with Temperature
250
VGS = 0 V
f = 1 MHz
TJ = 25°C
200
C, CAPACITANCE (pF)
I D, DRAIN CURRENT (AMPS)
225
1
TJ = 125°C
0.1
TJ = 25°C
175
150
125
100
Ciss
75
Coss
50
Crss
25
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN DIODE FORWARD VOLTAGE (VOLTS)
0
10
30
2
9
ID = 1 A
TJ = 25°C
8
7
6
VDS = 30 V
VDS = 48 V
5
4
3
2
1
0
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
gFS , TRANSCONDUCTANCE (mhos)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. Source–Drain Diode Forward Voltage
5
0
0.5
1
1.5
2
2.5
3
Qg, TOTAL GATE CHARGE (nC)
3.5
VDS = 10 V
1.5
1
25°C
0.5
0
4
TJ = -55°C
125°C
0
Figure 7. Gate Charge versus Gate–to–Source Voltage
0.5
1
1.5
ID, DRAIN CURRENT (AMPS)
Figure 8. Transconductance
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3
2
2.5
MMFT960T1
INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.15
3.8
0.079
2.0
0.091
2.3
0.248
6.3
0.091
2.3
0.079
2.0
0.059
1.5
0.059
1.5
0.059
1.5
inches
mm
SOT-223 POWER DISSIPATION
PD = 150°C – 25°C = 0.8 watts
156°C/W
The power dissipation of the SOT-223 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT-223 package, PD can be calculated as
follows:
PD =
The 156°C/W for the SOT-223 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 0.8 watts.
There are other alternatives to achieving higher power
dissipation from the SOT-223 package. One is to increase
the area of the collector pad. By increasing the area of the
collector pad, the power dissipation can be increased.
Although the power dissipation can almost be doubled with
this method, area is taken up on the printed circuit board
which can defeat the purpose of using surface mount
technology. A graph of RθJA versus collector pad area is
shown in Figure 9.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 0.8 watts.
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4
MMFT960T1
R
JA , Thermal Resistance, Junction
to Ambient (C/W)
160
°
Board Material = 0.0625″
G10/FR4, 2 oz Copper
140
TA = 25°C
0.8 Watts
120
1.5 Watts
1.25 Watts*
100
θ
80
0.0
*Mounted on the DPAK footprint
0.2
0.4
0.6
A, Area (square inches)
0.8
1.0
Figure 9. Thermal Resistance versus Collector
Pad Area for the SOT-223 Package (Typical)
Another alternative would be to use a ceramic substrate
or an aluminum core board such as Thermal Clad. Using
a board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDER STENCIL GUIDELINES
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the SOT-223 package should
be the same as the pad size on the printed circuit board, i.e.,
a 1:1 registration.
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
SOLDERING PRECAUTIONS
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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5
MMFT960T1
TYPICAL SOLDER HEATING PROFILE
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 10 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems but it is a good starting point. Factors that
can affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
STEP 1
PREHEAT
ZONE 1
“RAMP”
200°C
STEP 2
STEP 3
VENT
HEATING
“SOAK” ZONES 2 & 5
“RAMP”
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
160°C
STEP 5
STEP 6
STEP 7
HEATING
VENT
COOLING
ZONES 4 & 7
205° TO 219°C
“SPIKE”
PEAK AT
170°C
SOLDER
JOINT
150°C
150°C
100°C
140°C
100°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
5°C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 10. Typical Solder Heating Profile
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6
MMFT960T1
PACKAGE DIMENSIONS
SOT–223 (TO–261)
CASE 318E–04
ISSUE K
A
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
S
1
2
3
B
D
L
G
J
C
0.08 (0003)
H
M
K
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7
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H 0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
M
0
10 S
0.264
0.287
STYLE 3:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0
10 6.70
7.30
MMFT960T1
Thermal Clad is a registered trademark of the Bergquist Company.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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MMFT960T1/D