MJE15034 NPN, MJE15035 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for use as high−frequency drivers in audio amplifiers. Features • hFE = 100 (Min) @ IC = 0.5 Adc • • • • • • = 10 (Min) @ IC = 2.0 Adc Collector−Emitter Sustaining Voltage − VCEO(sus) = 350 Vdc (Min) − MJE15034, MJE15035 High Current Gain − Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc TO−220AB Compact Package Epoxy meets UL 94 V−0 @ 0.125 in ESD Ratings: Machine Model: C Human Body Model: 3B Pb−Free Packages are Available* 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS, 50 WATTS 4 1 2 Rating Symbol Value Unit VCEO 350 Vdc Collector−Base Voltage VCB 350 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous − Peak IC 4.0 8.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 50 0.40 W W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 W W/_C TJ, Tstg –65 to +150 _C Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 2.5 _C/W Device Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 3 3 MARKING DIAGRAM MAXIMUM RATINGS Collector−Emitter Voltage TO−220AB CASE 221A STYLE 1 1 MJE1503xG AYWW MJE1503x = Device Code x = 4 or 5 A = Location Code Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Package Shipping MJE15034 TO−220AB 50 Units / Rail MJE15034G TO−220AB (Pb−Free) 50 Units / Rail MJE15035 TO−220AB 50 Units / Rail MJE15035G TO−220AB (Pb−Free) 50 Units / Rail Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MJE15034/D MJE15034 NPN, MJE15035 PNP ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 350 − Vdc OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 350 Vdc, IE = 0) ICBO − 10 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 10 mAdc 100 100 50 10 − − − − − ON CHARACTERISTICS (Note 1) DC Current Gain hFE (IC = 0.1 Adc, VCE = 5.0 Vdc) (IC = 0.5 Adc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) (IC = 2.0 Adc, VCE = 5.0 Vdc) Collector−Emitter Saturation Voltage Base−Emitter On Voltage (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) − 0.5 Vdc (IC = 1.0 Adc, VCE = 5.0 Vdc) VBE(on) − 1.0 Vdc fT 30 − MHz DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = ⎪hfe⎪• ftest. 10 IC, COLLECTOR CURRENT (AMPS) PD, POWER DISSIPATION (WATTS) TA TC 3.0 60 2.0 40 TC TA 1.0 20 0 0 0 20 40 60 80 100 120 140 160 100mS DC 1.0 0.1 0.01 1.0 T, TEMPERATURE (°C) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 1. Power Derating 1.0 0.7 0.5 0.3 Figure 2. Active Region Safe Operating Area 0.1 0.02 0.01 0.02 SINGLE PULSE 0.05 0.1 P(pk) ZqJC(t) = r(t) RqJC RqJC = 2.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) ZqJC(t) 0.05 0.03 0.01 0.01 1000 0.2 0.1 0.02 100 D = 0.5 0.2 0.07 0.05 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) Figure 3. Thermal Response http://onsemi.com 2 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k MJE15034 NPN, MJE15035 PNP 1000 1000 TJ = 150°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN TJ = 150°C 25°C 100 −40°C 10 1.0 0.01 0.1 1.0 25°C −40°C 100 10 1.0 0.01 10 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 4. DC Current Gain, VCE = 5.0 V NPN MJE15034 Figure 5. DC Current Gain, VCE = 5.0 V PNP MJE15035 1000 10 1000 TJ = 150°C 100 hFE, DC CURRENT GAIN 25°C −40°C 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) 1.0 0.01 0.1 1.0 100 10 1.0 0.01 10 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 6. DC Current Gain, VCE = 20 V NPN MJE15034 Figure 7. DC Current Gain, VCE = 20 V PNP MJE15035 10 IC/IB = 10 1.0 25°C TJ = 150°C 0.1 −40°C 0.01 0.01 25°C −40°C VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN TJ = 150°C 0.1 1.0 10 10 IC/IB = 10 1.0 −40°C 0.1 TJ = 150°C 25°C 0.01 0.01 IC, COLLECTOR CURRENT (AMPS) 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 9. VCE(sat) PNP MJE15035 Figure 8. VCE(sat) NPN MJE15034 http://onsemi.com 3 10 10 MJE15034 NPN, MJE15035 PNP 10 IC/IB = 10 1.0 BASE−EMITTER VOLTAGE (V) BASE−EMITTER VOLTAGE (V) 10 −40°C 25°C TJ = 150°C 0.1 0.01 0.1 1.0 IC/IB = 10 −40°C 1.0 25°C TJ = 150°C 0.1 0.01 10 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 11. VBE(sat) PNP MJE15035 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(on), BASE−EMITTER VOLTAGE (V) 1.2 1.0 −40°C 0.6 25°C 0.4 TJ = 150°C 0.2 0.0 0.01 0.1 1.0 10 1.4 1.2 1.0 −40°C 0.8 0.6 25°C 0.4 TJ = 150°C 0.2 0.0 0.01 IC, COLLECTOR CURRENT (AMPS) fT, CURRENT BANDWIDTH PRODUCT (MHz) fT, CURRENT BANDWIDTH PRODUCT (MHz) TJ = 25°C f test = 1 MHz 50 40 30 VCE= 10 V 20 10 0 0.001 0.01 0.1 1.0 10 Figure 13. VBE(on) PNP MJE15035 80 60 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 12. VBE(on) NPN MJE15034 70 10 IC, COLLECTOR CURRENT (AMPS) Figure 10. VBE(sat) NPN MJE15034 0.8 1.0 1.0 10 100 80 TJ = 25°C f test = 1 MHz 60 40 VCE= 10 V 20 0 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 15. Typical Current Gain Bandwidth Product PNP MJE15035 Figure 14. Typical Current Gain Bandwidth Product NPN MJE15034 http://onsemi.com 4 MJE15034 NPN, MJE15035 PNP PACKAGE DIMENSIONS TO−220 THREE−LEAD TO−220AB CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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