ONSEMI TIP41B

TIP41, TIP41A, TIP41B,
TIP41C (NPN); TIP42, TIP42A,
TIP42B, TIP42C (PNP)
Complementary Silicon
Plastic Power Transistors
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Designed for use in general purpose amplifier and switching
applications.
6 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
40-60-80-100 VOLTS,
65 WATTS
Features
•ESD Ratings:
Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
•Epoxy Meets UL 94 V-0 @ 0.125 in
•Pb-Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
VCEO
40
60
80
100
Vdc
Collector-Base Voltage
TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
VCB
40
60
80
100
Vdc
VEB
5.0
Vdc
IC
6.0
10
Adc
Base Current
IB
2.0
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
65
0.52
W
W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
2.0
0.016
W
W/°C
Unclamped Inductive Load Energy
(Note 1)
E
62.5
mJ
Emitter-Base Voltage
Collector Current-
Continuous
Peak
Operating and Storage Junction,
Temperature Range
TJ, Tstg
4
1
°C
–65 to
+150
TO-220AB
CASE 221A
STYLE 1
2
TIP4xxG
AYWW
3
TIP4xx
xx
A
Y
WW
G
= Device Code
= 1, 1A, 1B, 1C
2, 2A, 2B, 2C
= Assembly Location
= Year
= Work Week
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
THERMAL CHARACTERISTICS
Characteristic
MARKING
DIAGRAM
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
RqJC
1.67
°C/W
Thermal Resistance, Junction-to-Ambient
RqJA
57
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 7
1
Publication Order Number:
TIP41A/D
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
40
60
80
100
-
Vdc
-
0.7
0.7
-
400
400
400
400
IEBO
-
1.0
mAdc
hFE
30
15
75
-
Collector-Emitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc)
VCE(sat)
-
1.5
Vdc
Base-Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc)
VBE(on)
-
2.0
Vdc
Current-Gain — Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0
MHz)
fT
3.0
-
MHz
Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
-
-
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
ICEO
TIP41, TIP41A, TIP42, TIP42A
TIP41B, TIP41C, TIP42B, TIP42C
Collector Cutoff Current
(VCE = 40 Vdc, VEB = 0)
(VCE = 60 Vdc, VEB = 0)
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)
mAdc
mAdc
ICES
TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc)
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device
Package
Shipping
TO-220
50 Units / Rail
TIP41G
TO-220
(Pb-Free)
50 Units / Rail
TIP41A
TO-220
50 Units / Rail
TO-220
(Pb-Free)
50 Units / Rail
TO-220
50 Units / Rail
TO-220
(Pb-Free)
50 Units / Rail
TO-220
50 Units / Rail
TO-220
(Pb-Free)
50 Units / Rail
TO-220
50 Units / Rail
TIP42G
TO-220
(Pb-Free)
50 Units / Rail
TIP42A
TO-220
50 Units / Rail
TO-220
(Pb-Free)
50 Units / Rail
TO-220
50 Units / Rail
TO-220
(Pb-Free)
50 Units / Rail
TO-220
50 Units / Rail
TO-220
(Pb-Free)
50 Units / Rail
TIP41
TIP41AG
TIP41B
TIP41BG
TIP41C
TIP41CG
TIP42
TIP42AG
TIP42B
TIP42BG
TIP42C
TIP42CG
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2
PD, POWER DISSIPATION (WATTS)
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
TA
4.0
TC
80
3.0
60
2.0
40
1.0
20
0
0
TC
TA
0
40
20
60
100
80
T, TEMPERATURE (°C)
120
140
160
Figure 1. Power Derating
VCC
+30 V
2.0
RC
0.7
0.5
SCOPE
+11 V
-9.0 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
t, TIME (s)
μ
RB
0
TJ = 25°C
VCC = 30 V
IC/IB = 10
1.0
25 ms
D1
0.3
0.2
tr
0.1
0.07
0.05
-4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.03
0.02
0.06
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
Figure 2. Switching Time Test Circuit
td @ VBE(off) ≈ 5.0 V
0.1
0.2
0.4 0.6
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn-On Time
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3
4.0
6.0
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
1.0
0.7
0.5
0.3
0.2
D = 0.5
0.2
0.1
0.1
0.07
0.05
0.02
0.03
0.02
0.01
SINGLE PULSE
0.01
0.01
0.02
0.05
P(pk)
ZqJC(t) = r(t) RqJC
RqJC = 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.05
1.0
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200
500
1.0 k
Figure 4. Thermal Response
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
v 150°C. T J(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
IC, COLLECTOR CURRENT (AMP)
0.5ms
5.0
1.0ms
3.0
TJ = 150°C
2.0 CURVES APPLY BELOW RATED VCEO
1.0
0.5
SECONDARY BREAKDOWN LTD
BONDING WIRE LTD
THERMAL LIMITATION @ TC = 25°C
(SINGLE PULSE)
0.3
0.2
0.1
5.0
5.0ms
TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
10
20
40
60
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
80 100
Figure 5. Active-Region Safe Operating Area
5.0
300
ts
t, TIME (s)
μ
1.0
TJ = 25°C
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
200
C, CAPACITANCE (pF)
3.0
2.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.06
tf
Cib
100
70
Cob
50
0.1
0.2
0.4 0.6
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
4.0
30
0.5
6.0
Figure 6. Turn-Off Time
1.0
2.0 3.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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4
30
50
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
hFE, DC CURRENT GAIN
300
200
VCE = 2.0 V
TJ = 150°C
100
70
50
25°C
30
20
10
7.0
5.0
0.06
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
-55°C
0.1
0.2 0.3 0.4 0.6
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
4.0
2.0
TJ = 25°C
1.6
1.2
IC = 1.0 A
0.4
0
6.0
10
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
V, VOLTAGE (VOLTS)
1.6
1.2
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 4.0 V
0.4
VCE(sat) @ IC/IB = 10
0.2 0.3 0.4
IC, COLLECTOR CURRENT (A)
μ
50
100
200 300
IB, BASE CURRENT (mA)
500
0.6
1.0
2.0 3.0 4.0
6.0
+2.0
1000
*APPLIES FOR IC/IB ≤ hFE/4
+1.5
+1.0
+25°C to +150°C
+0.5
*qVC FOR VCE(sat)
0
-55°C to +25°C
-0.5
+25°C to +150°C
-1.0
-1.5
qVB FOR VBE
-55°C to +25°C
-2.0
-2.5
0.06
0.1
0.2 0.3
0.5
2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
VCE = 30 V
TJ = 150°C
100°C
25°C
100
IC = ICES
10-1
REVERSE
FORWARD
0
+0.1 +0.2 +0.3 +0.4 +0.5 +0.6
+0.7
6.0
10M
VCE = 30 V
1.0M
10-3
-0.3 -0.2 -0.1
1.0
IC, COLLECTOR CURRENT (AMP)
R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
0.1
103
10-2
30
+2.5
TJ = 25°C
101
20
Figure 9. Collector Saturation Region
2.0
102
5.0 A
0.8
Figure 8. DC Current Gain
0
0.06
2.5 A
IC = 10 x ICES
IC ≈ ICES
100k
10k
IC = 2 x ICES
1.0k
0.1k
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
20
40
60
80
100
120
140
160
VBE, BASE-EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut-Off Region
Figure 13. Effects of Base-Emitter Resistance
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5
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
PACKAGE DIMENSIONS
TO-220
CASE 221A-09
ISSUE AE
-TB
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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For additional information, please contact your local
Sales Representative
TIP41A/D