IXYS IXFN64N50P Polarhvtm hiperfetpower mosfet Datasheet

PolarHVTM HiPerFET
Power MOSFET
IXFN 64N50P
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
= 500 V
= 64 A
≤ 85 mΩ
Ω
≤ 250 ns
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25°C
64
A
IDM
TC = 25°C, pulse width limited by TJM
150
A
IAR
TC = 25°C
64
A
EAR
TC = 25°C
70
mJ
EAS
TC = 25°C
2.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
20
V/ns
PD
TC = 25°C
700
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
TJ
TJM
Tstg
Md
Mounting torque
VISOL
50/60 Hz
t = 1 min
IISOL ≤ 1 mA
t=1s
Mounting torque
Terminal connection torque (M4)
SOT-227B
Md
Weight
1.13/10 Nm/lb.in.
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
z
International standard packages
Fast recovery diode
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 8 mA
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
Characteristic Values
Min. Typ.
Max.
500
2.5
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2005 IXYS All rights reserved
D = Drain
z
z
Easy to mount
Space savings
High power density
V
5.0
V
±100
nA
25
250
µA
µA
85
mΩ
DS99349(02/05)
IXFN64N50P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 20 V; ID = 0.5 ID25, pulse test
40
60
S
7000
pF
800
pF
Crss
100
pF
td(on)
30
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 ID25
25
ns
td(off)
RG = 2 Ω (External)
85
ns
22
ns
200
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
45
nC
120
nC
RthJC
RthCK
SOT-227B Outline
0.18 K/W
SOT-227B
0.05
Source-Drain Diode
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t rr
IF = 25A, -di/dt = 100 A/µs
QRM
VR = 100V
64
A
150
A
1.5
V
250
ns
0.6
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
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