MSC2712GT1, MSC2712YT1 General Purpose Amplifier Transistor NPN Surface Mount http://onsemi.com Features • Moisture Sensitivity Level: 1 • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc Emitter−Base Voltage V(BR)EBO 7.0 Vdc IC 100 mAdc IC(P) 200 mAdc Rating Collector Current − Continuous Collector Current − Peak 2 BASE 3 SC−59 CASE 318D STYLE 1 2 1 THERMAL CHARACTERISTICS Characteristic 1 EMITTER Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 °C Storage Temperature Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAMS 12G M 12Y M 12M, 12Y = Specific Device Code M = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MSC2712GT1 SC−59 3000/Tape & Reel MSC2712GT1G SC−59 (Pb−Free) 3000/Tape & Reel SC−59 3000/Tape & Reel SC−59 (Pb−Free) 3000/Tape & Reel MSC2712YT1 MSC2712YT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 May, 2005 − Rev. 5 1 Publication Order Number: MSC2712GT1/D MSC2712GT1, MSC2712YT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 − Vdc Collector−Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 − Vdc Emitter−Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 7.0 − Vdc Collector−Base Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO − 0.1 Adc Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) ICEO − − − 0.1 2.0 1.0 Adc Adc mAdc DC Current Gain (Note 1) (VCE = 6.0 Vdc, IC = 2.0 mAdc) hFE MSC2712GT1 MSC2712YT1 Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) Current −Gain − Bandwidth Product (IC = 1 mA, VCE = 10.0 V, f = 10 MHz) − 200 120 400 240 − 0.5 50 − fT 1. Pulse Test: Pulse Width ≤ 300 s, D.C. ≤ 2%. http://onsemi.com 2 Vdc MHz MSC2712GT1, MSC2712YT1 PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE G D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 2 E 1 DIM A A1 b c D E e L HE b e C A A1 MIN 1.00 0.013 0.35 0.09 2.70 1.30 1.70 0.20 2.50 MILLIMETERS NOM MAX 1.15 1.30 0.06 0.100 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR L SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 3 MIN 0.0394 0.0005 0.0138 0.0034 0.1063 0.0512 0.0670 0.0079 0.1102 INCHES NOM 0.0453 0.0022 0.0167 0.0053 0.1142 0.0591 0.0748 0.0157 0.1102 MAX 0.0511 0.0040 0.0196 0.0070 0.1220 0.0669 0.0826 0.0236 0.1181 MSC2712GT1, MSC2712YT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 For additional information, please contact your local Sales Representative. MSC2712GT1/D