ON NSS1C201L Npn transistor Datasheet

NSS1C201L, NSV1C201L
100 V, 3.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
www.onsemi.com
100 VOLTS, 3.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
COLLECTOR
3
1
BASE
Features
• NSV Prefix for Automotive and Other Applications Requiring
•
2
EMITTER
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
3
1
MAXIMUM RATINGS (TA = 25°C)
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
100
Vdc
Collector-Base Voltage
VCBO
140
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
IC
2.0
A
ICM
3.0
A
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
490
mW
3.7
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
255
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
710
mW
4.3
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
176
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Rating
Collector Current − Continuous
Collector Current − Peak
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
VT MG
G
THERMAL CHARACTERISTICS
Characteristic
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 4 @ 100 mm2, 1 oz. copper traces.
2. FR− 4 @ 500 mm2, 1 oz. copper traces.
© Semiconductor Components Industries, LLC, 2008
October, 2016 − Rev. 6
1
1
VT = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NSS1C201LT1G,
NSV1C201LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS1C201L/D
NSS1C201L, NSV1C201L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 140 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 6.0 Vdc)
IEBO
Vdc
100
Vdc
140
Vdc
7.0
nAdc
100
nAdc
50
ON CHARACTERISTICS
hFE
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
Collector −Emitter Saturation Voltage (Note 3)
(IC = 0.1 A, IB = 0.01 A)
(IC = 0.5 A, IB = 0.05 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 2.0 A, IB = 0.200 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 0.100 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 3)
(IC = 1.0 A, VCE = 2.0 V)
VBE(on)
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
150
120
80
40
240
360
V
0.030
0.060
0.090
0.150
V
0.950
V
0.850
fT
MHz
110
Input Capacitance (VEB = 2.0 V, f = 1.0 MHz)
Cibo
230
pF
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
14
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
TYPICAL CHARACTERISTICS
PD, POWER DERATING (W)
0.8
0.7
Note 2
0.6
0.5
0.4
Note 1
0.3
0.2
0.1
0
0
20
40
60
80
100
120
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Power Derating
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2
140
NSS1C201L, NSV1C201L
TYPICAL CHARACTERISTICS
400
300
25°C
250
200
150
−55°C
100
0.01
0.1
1
25°C
250
200
150
−55°C
100
0
10
0.1
−55°C
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC/IB = 20
150°C
25°C
0.1
−55°C
0.01
0.001
VBE(sat), BASE−EMITTER SATURATION (V)
VBE(sat), BASE−EMITTER SATURATION (V)
IC/IB = 10
−55°C
0.8
25°C
0.6
150°C
0.4
0.01
0.1
1
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 5. Collector−Emitter Saturation Voltage
1.2
1.0
10
1
Figure 4. Collector−Emitter Saturation Voltage
0.001
1
Figure 3. DC Current Gain
25°C
0.2
0.1
Figure 2. DC Current Gain
150°C
0.001
0.01
IC, COLLECTOR CURRENT (A)
IC/IB = 10
0.01
0.001
IC, COLLECTOR CURRENT (A)
VCE(sat), COLLECTOR−EMITTER SATURATION (V)
0.001
1
VCE(sat), COLLECTOR−EMITTER
SATURATION (V)
300
50
50
0
VCE = 4 V
150°C
350
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
350
400
VCE = 2 V
150°C
10
1.2
IC/IB = 50
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 6. Base−Emitter Saturation Voltage
Figure 7. Base−Emitter Saturation Voltage
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3
10
NSS1C201L, NSV1C201L
1.2
1
VCE = 2 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.001
0.01
0.1
1
COB, OUTPUT CAPACITANCE (pF)
150
100
50
0
1
2
3
4
5
6
7
8
0.1
1
TJ = 25°C
fTEST = 1 MHz
40
35
30
25
20
15
10
5
0
0
10
20
30
40
50
60
70
80
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance
Figure 11. Output Capacitance
80
60
40
20
0.01
90 100
10
TJ = 25°C
fTEST = 1 MHz
VCE = 2 V
0.001
45
VEB, EMITTER BASE VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
CIB, INPUT CAPACITANCE (pF)
fTau, CURRENT GAIN BANDWIDTH (MHz)
0.01
50
TJ = 25°C
fTEST = 1 MHz
200
0
0.001
Figure 9. Collector Saturation Region
250
100
0.0001
Figure 8. Base Emitter Voltage
300
120
IC = 0.1 A
IB, BASE CURRENT (A)
350
140
0.5 A
0.1
IC, COLLECTOR CURRENT (A)
400
0
1A
0.01
10
3A
2A
0.1
10 mS
1
Thermal Limit
0.1
0.01
1
1 mS
100 mS
0.1
1
10
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 12. Current−Gain Bandwidth Product
Figure 13. Safe Operating Area
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4
100
NSS1C201L, NSV1C201L
1000
D = 0.5
R(t), (°C/W)
100
D = 0.2
D = 0.1
D = 0.05
10
D = 0.02
D = 0.01
1
0.1
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 14. Transient Thermal Resistnce
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5
1.0
10
100
1000
NSS1C201L, NSV1C201L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0_
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 _
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0_
INCHES
NOM
MAX
0.039
0.044
0.002
0.004
0.017
0.020
0.006
0.008
0.114
0.120
0.051
0.055
0.075
0.080
0.017
0.022
0.021
0.027
0.094
0.104
−−−
10 _
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NSS1C201L/D
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