MC14016B Quad Analog Switch/ Quad Multiplexer The MC14016B quad bilateral switch is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. Each MC14016B consists of four independent switches capable of controlling either digital or analog signals. The quad bilateral switch is used in signal gating, chopper, modulator, demodulator and CMOS logic implementation. http://onsemi.com MARKING DIAGRAMS Features • • • • • • • • Diode Protection on All Inputs Supply Voltage Range = 3.0 Vdc to 18 Vdc Linearized Transfer Characteristics Low Noise − 12 nV/√Cycle, f ≥ 1.0 kHz typical Pin−for−Pin Replacements for CD4016B, CD4066B (Note improved transfer characteristic design causes more parasitic coupling capacitance than CD4016) For Lower RON, Use The HC4016 High−Speed CMOS Device or The MC14066B This Device Has Inputs and Outputs Which Do Not Have ESD Protection. Antistatic Precautions Must Be Taken. Pb−Free Packages are Available 14 PDIP−14 P SUFFIX CASE 646 1 14 SOIC−14 D SUFFIX CASE 751A VDD Parameter DC Supply Voltage Range Value Unit −0.5 to +18.0 V Vin, Vout Input or Output Voltage Range (DC or Transient) −0.5 to VDD + 0.5 V Iin Input Current (DC or Transient) per Control Pin ± 10 mA ISW Switch Through Current ± 25 mA PD Power Dissipation, per Package (Note 1) 500 mW TA Ambient Temperature Range −55 to +125 °C Tstg Storage Temperature Range −65 to +150 °C TL Lead Temperature (8−Second Soldering) 260 °C 14016BG AWLYWW 1 14 SOEIAJ−14 F SUFFIX CASE 965 MAXIMUM RATINGS (Voltages Referenced to VSS) Symbol MC14016BCP AWLYYWWG MC14016B ALYWG 1 A WL, L YY, Y WW, W G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Indicator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Temperature Derating: Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range VSS v (Vin or Vout) v VDD. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open. © Semiconductor Components Industries, LLC, 2006 October, 2006 − Rev. 7 1 Publication Order Number: MC14016B/D MC14016B PIN ASSIGNMENT BLOCK DIAGRAM IN 1 1 14 VDD OUT 1 2 13 CONTROL 1 OUT 2 3 12 CONTROL 4 IN 2 4 11 IN 4 CONTROL 2 5 10 OUT 4 CONTROL 3 6 9 OUT 3 VSS 7 8 IN 3 CONTROL 1 IN 1 CONTROL 2 IN 2 CONTROL 3 IN 3 CONTROL 4 IN 4 LOGIC DIAGRAM (1/4 OF DEVICE SHOWN) 13 2 OUT 1 1 5 3 OUT 2 4 6 9 OUT 3 8 12 10 11 OUT 4 VDD = PIN 14 VSS = PIN 7 OUT CONTROL LOGIC DIAGRAM RESTRICTIONS VSS ≤ Vin ≤ VDD VSS ≤ Vout ≤ VDD IN Control Switch 0 = VSS Off 1 = VDD On ORDERING INFORMATION Device Package MC14016BCP PDIP−14 MC14016BCPG PDIP−14 (Pb−Free) MC14016BD SOIC−14 MC14016BDG SOIC−14 (Pb−Free) MC14016BDR2 SOIC−14 MC14016BDR2G SOIC−14 (Pb−Free) MC14016BFEL SOEIAJ−14 MC14016BFELG SOEIAJ−14 (Pb−Free) Shipping † 25 / Tape & Ammo Box 55 Units / Rail 2500 / Tape & Reel 2000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MC14016B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS) Characteristic Input Voltage Control Input 125_C Max Min Typ (2) Max Min Max Unit Symbol 1 VIL 5.0 10 15 − − − − − − − − − 1.5 1.5 1.5 0.9 0.9 0.9 − − − − − − Vdc VIH 5.0 10 15 − − − − − − 3.0 8.0 13 2.0 6.0 11 − − − − − − − − − Vdc 15 − ± 0.1 − ± 0.00001 ± 0.1 − ± 1.0 mAdc − − − − − − − − − − − − − − − − 5.0 5.0 5.0 0.2 − − − − − − − − − − − − 5.0 10 15 − − − 0.25 0.5 1.0 − − − 0.0005 0.0010 0.0015 0.25 0.5 1.0 − − − 7.5 15 30 − − − 600 600 600 − − − − − 300 300 280 660 660 660 − − − − − 840 840 840 7.5 − − − 360 360 360 − − − 240 240 180 400 400 400 − − − 520 520 520 10 − − − 600 600 600 − − − 260 310 310 660 660 660 − − − 840 840 840 15 − − − 360 360 360 − − − 260 260 300 400 400 400 − − − 520 520 520 − Iin Input Capacitance Control Switch Input Switch Output Feed Through − Cin “ON” Resistance (VC = VDD, RL = 10 kW) (Vin = + 5.0 Vdc) (Vin = − 5.0 Vdc) VSS = − 5.0 Vdc (Vin = ± 0.25 Vdc) 25_C Min Figure Input Current Control Quiescent Current (Per Package) (3) − 55_C VDD Vdc 2,3 IDD 4,5,6 RON 5.0 (Vin = + 7.5 Vdc) (Vin = − 7.5 Vdc) VSS = − 7.5 Vdc (Vin = ± 0.25 Vdc) (Vin = + 10 Vdc) (Vin = + 0.25 Vdc) VSS = 0 Vdc (Vin = + 5.6 Vdc) (Vin = + 15 Vdc) (Vin = + 0.25 Vdc) VSS = 0 Vdc (Vin = + 9.3 Vdc) D “ON” Resistance Between any 2 circuits in a common package (VC = VDD) (Vin = ± 5.0 Vdc, VSS = − 5.0 Vdc) (Vin = ± 7.5 Vdc, VSS = − 7.5 Vdc) − Input/Output Leakage Current (VC = VSS) (Vin = + 7.5, Vout = − 7.5 Vdc) (Vin = − 7.5, Vout = + 7.5 Vdc) − pF mAdc Ohms Ohms DRON − − 5.0 7.5 − − − − 15 10 − − − − − − − mAdc 7.5 7.5 − − ± 0.1 ± 0.1 − − ± 0.0015 ± 0.0015 ± 0.1 ± 0.1 − − ± 1.0 ± 1.0 NOTE: All unused inputs must be returned to VDD or VSS as appropriate for the circuit application. 2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. 3. For voltage drops across the switch (DV switch) > 600 mV ( > 300 mV at high temperature), excessive VDD current may be drawn; i.e., the current out of the switch may contain both V DD and switch input components. The reliability of the device will be unaffected unless the Maximum Ratings are exceeded. (See first page of this data sheet.) Reference Figure 14. http://onsemi.com 3 MC14016B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (4) (CL = 50 pF, TA = 25_C) Characteristic VDD Vdc Min Typ (5) Max Unit 5.0 10 15 − − − 15 7.0 6.0 45 15 12 ns 5.0 10 15 − − − 34 20 15 90 45 35 − 5.0 10 15 − − − 30 50 100 − − − mV − − 5.0 − – 80 − dB 10,11 − 5.0 10 15 − − − 24 25 30 − − − nV/√Cycle 5.0 10 15 − − − 12 12 15 − − − − 0.16 − Figure Symbol Propagation Delay Time (VSS = 0 Vdc) Vin to Vout (VC = VDD, RL = 10 kW) 7 tPLH, tPHL Control to Output (Vin v 10 Vdc, RL = 10 kW) 8 tPHZ, tPLZ, tPZH, tPZL Crosstalk, Control to Output (VSS = 0 Vdc) (VC = VDD, Rin = 10 kW, Rout = 10 kW, f = 1.0 kHz) 9 Crosstalk between any two switches (VSS = 0 Vdc) (RL = 1.0 kW, f = 1.0 MHz, V crosstalk + 20 log10 out1) Vout2 Noise Voltage (VSS = 0 Vdc) (VC = VDD, f = 100 Hz) (VC = VDD, f = 100 kHz) ns Second Harmonic Distortion (VSS = – 5.0 Vdc) (Vin = 1.77 Vdc, RMS Centered @ 0.0 Vdc, RL = 10 kW, f = 1.0 kHz) − − 5.0 Insertion Loss (VC = VDD, Vin = 1.77 Vdc, VSS = − 5.0 Vdc, RMS centered = 0.0 Vdc, f = 1.0 MHz) V Iloss + 20 log10 out) Vin (RL = 1.0 kW) (RL = 10 kW) (RL = 100 kW) (RL = 1.0 MW) 12 − 5.0 Bandwidth (− 3.0 dB) (VC = VDD, Vin = 1.77 Vdc, VSS = − 5.0 Vdc, RMS centered @ 0.0 Vdc) (RL = 1.0 kW) (RL = 10 kW) (RL = 100 kW) (RL = 1.0 MW) OFF Channel Feedthrough Attenuation (VSS = − 5.0 Vdc) Vout + –50 dB) (VC = VSS, 20 log10 Vin (RL = 1.0 kW) (RL = 10 kW) (RL = 100 kW) (RL = 1.0 MW) dB − − − − 12,13 BW − 2.3 0.2 0.1 0.05 − − − − 5.0 MHz − − − − − 54 40 38 37 − − − − 5.0 kHz − − − − 1250 140 18 2.0 − − − − 4. The formulas given are for typical characteristics only at 25_C. 5. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. http://onsemi.com 4 % MC14016B VC IS Vin Vout VIL: VC is raised from VSS until VC = VIL. VIL: at VC = VIL: IS = ±10 mA with Vin = VSS, Vout = VDD or Vin = VDD, Vout = VSS. VIH: When VC = VIH to VDD, the switch is ON and the RON specifications are met. Figure 1. Input Voltage Test Circuit 10,000 PD , POWER DISSIPATION (μW) VDD = 15 Vdc VDD ID PULSE GENERATOR TO ALL 4 CIRCUITS VDD Vout 10 k CONTROL INPUT fc VSS Vin TA = 25°C 1000 5.0 Vdc 100 10 1.0 5.0k 10k PD = VDD x ID 10 Vdc Figure 2. Quiescent Power Dissipation Test Circuit 100k 1.0M fc, FREQUENCY (Hz) 10M 50M Figure 3. Typical Power Dissipation per Circuit (1/4 of device shown) TYPICAL RON versus INPUT VOLTAGE 700 RL = 10 kW TA = 25°C 600 R ON, ON" RESISTANCE (OHMS) R ON, ON" RESISTANCE (OHMS) 700 500 400 VC = VDD = 5.0 Vdc VSS = − 5.0 Vdc 300 200 100 0 − 10 − 8.0 VC = VDD = 7.5 Vdc VSS = − 7.5 Vdc − 4.0 0 4.0 Vin, INPUT VOLTAGE (Vdc) 8.0 500 400 VC = VDD = 10 Vdc 300 200 VC = VDD = 15 Vdc 100 0 10 VSS = 0 Vdc RL = 10 kW TA = 25°C 600 0 Figure 4. VSS = − 5.0 V and − 7.5 V 2.0 6.0 10 14 Vin, INPUT VOLTAGE (Vdc) Figure 5. VSS = 0 V http://onsemi.com 5 18 20 MC14016B Vout RL CL Vin Vout 20 ns RL VC 20 ns 90% 50% Vin tPLH Figure 6. RON Characteristics Test Circuit 10% tPHL VSS 50% Vout Vin VDD Figure 7. Propagation Delay Test Circuit and Waveforms Vout VC RL VX Vin 20 ns 50% VC Vout Vout VDD 90% 10% tPZH tPHZ 90% 10% tPZL CL Vout 10 k VC VSS Vin = VDD Vx = VSS Vin tPLZ 90% 10% 15 pF 1k Vin = VSS Vx = VDD Figure 8. Turn−On Delay Time Test Circuit and Waveforms Figure 9. Crosstalk Test Circuit OUT VC = VDD IN NOISE VOLTAGE (nV/ CYCLE) 35 QUAN−TECH MODEL 2283 OR EQUIV 30 VDD = 15 Vdc 25 10 Vdc 20 5.0 Vdc 15 10 5.0 0 10 Figure 10. Noise Voltage Test Circuit 100 1.0k f, FREQUENCY (Hz) 10 k Figure 11. Typical Noise Characteristics http://onsemi.com 6 100 k MC14016B TYPICAL INSERTION LOSS (dB) 2.0 0 RL = 1 MW AND 100 kW 10 kW − 2.0 − 4.0 1.0 kW− 3.0 dB (R = 1.0 MW ) L − 6.0 − 3.0 dB (RL = 10 kW ) − 8.0 Vout − 3.0 dB (RL = 1.0 kW ) + 2.5 Vdc 0.0 Vdc − 2.5 Vdc − 10 − 12 10 k Vin 100 k 1.0M 10 M fin, INPUT FREQUENCY (Hz) RL VC 100 M Figure 12. Typical Insertion Loss/Bandwidth Characteristics Figure 13. Frequency Response Test Circuit ON SWITCH CONTROL SECTION OF IC LOAD V SOURCE Figure 14. DV Across Switch http://onsemi.com 7 MC14016B APPLICATIONS INFORMATION Figure A illustrates use of the Analog Switch. The 0−to−5 V Digital Control signal is used to directly control a 5 Vp−p analog signal. The digital control logic levels are determined by V DD and VSS. The VDD voltage is the logic high voltage; the VSS voltage is logic low. For the example, VDD = +5 V logic high at the control inputs; V SS = GND = 0 V logic low. The maximum analog signal level is determined by VDD and V SS. The analog voltage must not swing higher than V DD or lower than V SS. The example shows a 5 V p−p signal which allows no margin at either peak. If voltage transients above V DD and/or below V SS are anticipated on the analog channels, external diodes (Dx) are recommended as shown in Figure B. These diodes should be small signal types able to absorb the maximum anticipated current surges during clipping. The absolute maximum potential difference between V DD and VSS is 18.0 V. Most parameters are specified up to 15 V which is the recommended maximum difference between V DD and V SS. +5 V VSS VDD +5 V 5 Vp−p ANALOG SIGNAL EXTERNAL CMOS DIGITAL CIRCUITRY SWITCH IN + 5.0 V SWITCH OUT 5 Vp−p + 2.5 V ANALOG SIGNAL 0−TO−5 V DIGITAL CONTROL SIGNALS GND MC14016B Figure A. Application Example VDD VDD Dx Dx SWITCH IN SWITCH OUT Dx Dx VSS VSS Figure B. External Germanium or Schottky Clipping Diodes http://onsemi.com 8 MC14016B PACKAGE DIMENSIONS PDIP−14 CASE 646−06 ISSUE P 14 8 1 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. B A F L N C −T− SEATING PLANE H G D 14 PL J K 0.13 (0.005) M M http://onsemi.com 9 DIM A B C D F G H J K L M N INCHES MIN MAX 0.715 0.770 0.240 0.260 0.145 0.185 0.015 0.021 0.040 0.070 0.100 BSC 0.052 0.095 0.008 0.015 0.115 0.135 0.290 0.310 −−− 10 _ 0.015 0.039 MILLIMETERS MIN MAX 18.16 19.56 6.10 6.60 3.69 4.69 0.38 0.53 1.02 1.78 2.54 BSC 1.32 2.41 0.20 0.38 2.92 3.43 7.37 7.87 −−− 10 _ 0.38 1.01 MC14016B PACKAGE DIMENSIONS SOIC−14 CASE 751A−03 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. −A− 14 8 −B− P 7 PL 0.25 (0.010) M 7 1 G −T− D 14 PL 0.25 (0.010) T B S A DIM A B C D F G J K M P R J M K M F R X 45 _ C SEATING PLANE B M S SOLDERING FOOTPRINT* 7X 7.04 14X 1.52 1 14X 0.58 1.27 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 10 MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019 MC14016B PACKAGE DIMENSIONS SOEIAJ−14 CASE 965−01 ISSUE A 14 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.018). LE 8 Q1 E HE M_ L 7 1 DETAIL P Z D VIEW P A e A1 b 0.13 (0.005) c M 0.10 (0.004) DIM A A1 b c D E e HE 0.50 LE M Q1 Z MILLIMETERS MIN MAX −−− 2.05 0.05 0.20 0.35 0.50 0.10 0.20 9.90 10.50 5.10 5.45 1.27 BSC 7.40 8.20 0.50 0.85 1.10 1.50 10 _ 0_ 0.70 0.90 −−− 1.42 INCHES MIN MAX −−− 0.081 0.002 0.008 0.014 0.020 0.004 0.008 0.390 0.413 0.201 0.215 0.050 BSC 0.291 0.323 0.020 0.033 0.043 0.059 10 _ 0_ 0.028 0.035 −−− 0.056 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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