Renesas H7N0307LSTL-E Silicon n channel mos fet high speed power switching Datasheet

H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1121-0700
(Previous: ADE-208-1516E)
Rev.7.00
Apr 07, 2006
Features
• Low on-resistance
RDS (on) = 4.6 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
4
1
1
2
1. Gate
2. Drain
3. Source
4. Drain
2
3
3
H7N0307LD
H7N0307LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
D
4
G
1
2
3
H7N0307LM
Rev.7.00 Apr 07, 2006 page 1 of 7
S
H7N0307LD, H7N0307LS, H7N0307LM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSS
Value
30
Unit
V
VGSS
ID
±20
60
V
A
240
60
A
A
Pch
θ ch-c
90
1.39
W
°C/W
Channel to ambient thermal impedance
Channel temperature
θ ch-a
Tch
89
150
°C/W
°C
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Tstg
–55 to +150
°C
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
ID (pulse)
IDR
Note 1
Note 2
Channel dissipation
Channel to case thermal impedance
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V (BR) DSS
Min
30
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
Gate to source leak current
V (BR) GSS
IGSS
±20
—
—
—
—
±10
V
µA
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
IDSS
—
1.0
—
—
10
2.5
µA
V
VDS = 30 V, VGS = 0
Note 3
ID = 1 mA, VDS = 10 V
RDS (on)
—
—
4.6
8.0
5.8
11.5
mΩ
mΩ
ID = 30 A, VGS = 10 V
Note 3
ID = 30 A, VGS = 4.5 V
Forward transfer admittance
Input capacitance
|yfs|
Ciss
40
—
65
2500
—
—
S
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
650
350
—
—
pF
pF
ID = 30 A, VDS = 10 V
VDS = 10 V
VGS = 0
f = 1 MHz
Total gate charge
Gate to source charge
Qg
Qgs
—
—
40
7
—
—
nC
nC
Gate to drain charge
Turn-on delay time
Qgd
td (on)
—
—
8
20
—
—
nC
ns
Rise time
Turn-off delay time
tr
td (off)
—
—
300
70
—
—
ns
ns
Fall time
Body to drain diode forward voltage
tf
VDF
—
—
20
0.92
—
—
ns
V
trr
—
60
—
ns
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Body to drain diode reverse recovery
time
Note:
3. Pulse test
Rev.7.00 Apr 07, 2006 page 2 of 7
VGS (off)
Note 3
VDD = 10 V
VGS = 10 V
ID = 60 A
VGS = 10 V, ID = 30 A
RL = 0.33 Ω
Rg = 4.7 Ω
IF = 60 A, VGS = 0
IF = 60 A, VGS = 0
diF/dt = 50 A/µs
Note 3
H7N0307LD, H7N0307LS, H7N0307LM
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
(A)
500
ID
120
Drain Current
Channel Dissipation
Pch (W)
160
80
40
10
1m
100
DC
0
50
100
150
Case Temperature
on
=
10
ms
Operation in
this area is
limited by RDS (on)
1
0.1
0.01
0.1
200
Tc (°C)
3
10
30
100
VDS (V)
50
10 V
VDS = 10 V
Pulse Test
3.5 V
Pulse Test
4.5 V
40
1
Typical Transfer Characteristics
ID (A)
50
0.3
Drain to Source Voltage
Typical Output Characteristics
ID (A)
PW
ati
µs
Tc = 25°C
1 shot Pulse
0
30
40
30
20
Drain Current
Drain Current
Op
er
10
s 100
µs
3V
10
25°C
20
Tc = 75°C
–25°C
10
VGS = 2.5 V
0
0
0
2
4
6
Drain to Source Voltage
8
10
0
VDS (V)
0.16
0.12
0.08
ID = 10 A
0.04
5A
2A
0
0
4
8
12
Gate to Source Voltage
Rev.7.00 Apr 07, 2006 page 3 of 7
16
20
VGS (V)
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
RDS(on) (mΩ)
Drain to Source Saturation Voltage
VDS(on) (V)
Pulse Test
2
Gate to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.20
1
100
Pulse Test
50
20
VGS = 4.5 V
10
5
10 V
2
1
0.1 0.2 0.5 1
2
5 10 20
Drain Current
ID (A)
50 100
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
H7N0307LD, H7N0307LS, H7N0307LM
20
Pulse Test
16
ID = 2 A, 5 A, 10 A
12
VGS = 4.5 V
8
2 A, 5 A, 10 A
4
10 V
0
–40
0
40
80
Case Temperature
120
Tc
160
100
Tc = –25°C
30
75°C
10
25°C
3
1
0.3
VDS = 10 V
Pulse Test
0.1
0.1
500
3000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
10000
200
100
50
Coss
300
Crss
100
1
3
10
30
100
0
8
10
4
VDD = 25 V
10 V
5V
0
20
40
Gate Charge
Rev.7.00 Apr 07, 2006 page 4 of 7
60
80
Qg (nc)
30
40
50
0
100
VGS (V)
500
Switching Time t (ns)
VDD = 25 V
10 V 12
5V
Gate to Source Voltage
(V)
VDS
Drain to Source Voltage
16
20
20
Switching Characteristics
VGS
VDS
10
Drain to Source Voltage VDS (V)
IDR (A)
20
0
VGS = 0
f = 1 MHz
10
0.3
ID = 60 A
30
100
1000
Dynamic Input Characteristics
40
30
Ciss
30
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
Reverse Drain Current
50
10
Typical Capacitance vs.
Drain to Source Voltage
1000
10
0.1
3
Drain Current ID (A)
(°C)
Body to Drain Diode Reverse
Recovery Time
20
1
0.3
200
100
tr
td(off)
50
td(on)
20
tf
10
VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
5
0.1 0.2 0.5 1
2
5 10 20
Drain Current
ID (A)
50 100
H7N0307LD, H7N0307LS, H7N0307LM
Reverse Drain Current vs.
Souece to Drain Voltage
Reverse Drain Current IDR (A)
100
80
10 V
60
VGS = 0
5V
40
20
Pulse Test
0
0
0.4
0.8
1.2
2.0
1.6
Source to Drain Voltage
VSD (V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 1.38°C/W, Tc = 25°C
0.1
0.05
0.02
0.03
PDM
1
e
0.0 puls
t
ho
1s
D=
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
Vin
Vout
Vin
10 V
VDS
= 10 V
10%
10%
90%
td(on)
Rev.7.00 Apr 07, 2006 page 5 of 7
10%
RL
tr
90%
td(off)
tf
H7N0307LD, H7N0307LS, H7N0307LM
Package Dimensions
RENESAS Code
PRSS0004AE-A
MASS[Typ.]
1.40g
4.44 ± 0.2
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
2.49 ± 0.2
11.0 ± 0.5
0.2
0.86 +– 0.1
Package Name
LDPAK(S)-(1)
Unit: mm
10.2 ± 0.3
8.6 ± 0.3
11.3 ± 0.5
0.3
10.0 +– 0.5
Previous Code
LDPAK(L) / LDPAK(L)V
Previous Code
LDPAK(S)-(1) / LDPAK(S)-(1)V
0.4 ± 0.1
MASS[Typ.]
1.30g
(1.5)
10.0
Rev.7.00 Apr 07, 2006 page 6 of 7
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
2.54 ± 0.5
0.2
0.86 +– 0.1
7.8
7.0
2.49 ± 0.2
0.2
0.1 +– 0.1
1.37 ± 0.2
1.3 ± 0.2
7.8
6.6
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
JEITA Package Code

(1.4)
Package Name
LDPAK(L)
2.2
H7N0307LD, H7N0307LS, H7N0307LM
JEITA Package Code

RENESAS Code
PRSS0004AE-C
Previous Code
LDPAK(S)-(2) / LDPAK(S)-(2)V
MASS[Typ.]
1.35g
7.8
6.6
(2.3)
10.0
2.49 ± 0.2
7.8
7.0
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
Package Name
LDPAK(S)-(2)
0.2
0.1 +– 0.1
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
5.0 +– 0.5
1.3 ± 0.2
Ordering Information
Part Name
H7N0307LD-E
H7N0307LSTL-E
Quantity
500 pcs
1000 pcs
Shipping Container
Box (Conductive Sack)
Taping
H7N0307LMTL-E
1000 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.7.00 Apr 07, 2006 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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