IXYS IXFH21N50F Hiperrf power mosfet Datasheet

Advance Technical Information
HiPerRFTM
Power MOSFETs
F-Class: MegaHertz Switching
IXFH 21N50F VDSS
IXFT 21N50F ID25
RDS(on)
= 500 V
=
21A
Ω
= 250mΩ
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
TO-247 AD (IXFH)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
21
84
21
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
35
1.5
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
10
V/ns
PD
TC = 25°C
300
W
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
300
°C
(TAB)
TL
1.6 mm (0.063 in.) from case for 10 s
Md
Mounting torque
TO-247
1.13/10 Nm/lb.in.
TO-247
TO-268
Weight
6
4
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 1mA
500
3.0
VGS(th)
VDS = VGS, ID = 4mA
IGSS
VGS = ±20 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Note 1
© 2002 IXYS All rights reserved
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
5.5 V
±100 nA
TJ = 125°C
50 µA
1.5 mA
TO-268 (IXFT) Case Style
G
(TAB)
S
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
l
RF capable MOSFETs
l
Double metal process for low gate
resistance
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic rectifier
Applications
l
DC-DC converters
l
Switched-mode and resonant-mode
power supplies, >500kHz switching
l
DC choppers
l
13.5 MHz industrial applications
l
Pulse generation
l
Laser drivers
l
RF amplifiers
Advantages
l
Space savings
l
High power density
250 mΩ
98884 (1/02)
IXFH 21N50F
IXFT 21N50F
Symbol
Test Conditions
17
S
2600
pF
470
pF
Crss
160
pF
td(on)
16
ns
gfs
V DS = 10 V; ID = 0.5 ID25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Note 1
12
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
12
ns
td(off)
RG = 2.0 Ω (External)
36
ns
tf
7.7
ns
Qg(on)
77
nC
21
nC
40
nC
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
0.42
RthJC
RthCK
(TO-247)
Source-Drain Diode
0.25
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
V GS = 0 V
21
A
ISM
Repetitive;
pulse width limited by TJM
84
A
VSD
IF = IS, VGS = 0 V, Note 1
1.5
V
250
ns
1
2
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
3
Dim.
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
2.87
3.12
b2
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
trr
QRM
TO-247 AD Outline
IF = IS,-di/dt = 100 A/µs, VR = 100 V
1.2
µC
10
A
IRM
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Dim.
Min Recommended Footprint
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
Millimeter
Min.
Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2
L3
L4
1.00
1.15
0.25 BSC
3.80
4.10
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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