HCTS11MS Radiation Hardened Triple 3-Input AND Gate November 1994 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW • Total Dose 200K or 1 Mega-RAD (Si) • Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse A1 1 14 VCC • Military Temperature Range: -55 C to +125 C B1 2 13 C1 • Significant Power Reduction Compared to LSTTL ICs A2 3 12 Y1 • DC Operating Voltage Range: 4.5V to 5.5V B2 4 11 C3 • LSTTL Input Compatibility - VIL = 0.8V Max. - VIH = VCC/2 Min • Input Current Levels Ii ≤ 5µA at VOL, VOH C2 5 10 B3 Y2 6 9 A3 GND 7 8 Y3 • Latch-Up Free Under Any Conditions o o Description 14 PIN CERAMIC FLAT PACK MIL-STD-1835 DESIGNATOR CDFP3-F14, LEAD FINISH C TOP VIEW The Intersil HCTS11MS is a Radiation Hardened Triple 3Input AND Gate. A high on all inputs forces the output to a High state. The HCTS11MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. A1 1 14 VCC B1 2 13 C1 A2 3 12 Y1 The HCTS11MS is supplied in a 14 lead Weld Seal Ceramic flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line Package (D suffix). B2 4 11 C3 C2 5 10 B3 Y2 6 9 A3 GND 7 8 Y3 Truth Table Functional Diagram INPUTS OUTPUTS An Bn Cn Yn L L L L L L H L L H L L L H H L H L L L H L H L H H L L H H H H An Bn Yn Cn NOTE: L = Logic Level Low, H = Logic level High CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com | Copyright © Intersil Corporation 1999 7-141 File Number 2409.1 Specifications HCTS11MS Absolute Maximum Ratings Reliability Information Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Thermal Impedance . . . . . . . . . . . . . . . . θja θjc Weld Seal DIC . . . . . . . . . . . . . . . . . . . 75oC/W 16oC/W Weld Seal Flat Pack . . . . . . . . . . . . . . 64oC/W 12oC/W Power Dissipation per Package (PD) For TA = -55oC to +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W For TA = +100oC to +125oC. . . . . . . .Derate Linearly at 13mW/oC CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation. Operating Conditions Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . 100ns/V Max. Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETERS Quiescent Current TEMPERATURE MIN MAX UNITS 1 +25oC - 10 µA 2, 3 +125oC, -55oC - 200 µA 1 +25oC 4.8 - mA 2, 3 +125oC, -55oC 4.0 - mA 1 +25oC -4.8 - mA 2, 3 +125oC, -55oC -4.0 - mA VCC = 4.5V, VIH = 2.25V, IOL = 50µA, VIL = 0.8V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 5.5V, VIH = 2.75V, IOL = 50µA, VIL = 0.8V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 4.5V, VIH = 2.25V, IOH = -50µA, VIL = 0.8V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIH = 2.75V, IOH = -50µA, VIL = 0.8V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIN = VCC or GND 1 +25oC -0.5 +0.5 µA 2, 3 +125oC, -55oC -5.0 +5.0 µA 7, 8A, 8B +25oC, +125oC, -55oC 4.0 0.5 - SYMBOL ICC Output Current (Sink) IOL Output Current (Source) IOH Output Voltage Low VOL Output Voltage High GROUP A SUBGROUPS (NOTE 1) CONDITIONS VOH Input Leakage Current IIN Noise Immunity Functional Test FN VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V VCC = 4.5V, VIH = 2.25V, VIL = 0.8V (Note 2) LIMITS NOTE: 1. All voltages reference to device GND. 2. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. 7-142 Specifications HCTS11MS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Input to Output (NOTES 1, 2) CONDITIONS SYMBOL TPHL GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 9 +25oC 2 18 ns 10, 11 +125oC, -55oC 2 20 ns 9 +25oC 2 20 ns 10, 11 +125oC, -55oC 2 22 ns MAX UNITS VCC = 4.5V TPLH VCC = 4.5V LIMITS NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500Ω, CL = 50pF, Input tr = tf = 3ns, VIL = GND, VIH = 3V. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL Capacitance Power Dissipation CPD Input Capacitance CIN Output Transition Time TTHL TTLH CONDITIONS NOTES TEMPERATURE 1 +25oC Typical 26 pF 1 +125oC Typical 56 pF 1 +25oC - 10 pF 1 +125oC - 10 pF 1 +25oC - 15 ns 1 +125oC - 22 ns VCC = 5.0V, f = 1MHz VCC = Open, f = 1MHz VCC = 4.5V MIN NOTES: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETERS Quiescent Current SYMBOL ICC 200K RAD LIMITS 1M RAD LIMITS (NOTES 1, 2) CONDITIONS TEMPERATURE MIN MAX MIN MAX UNITS VCC = 5.5V, VIN = VCC or GND +25oC - 0.2 - 1.0 mA 4.0 - 4.0 - mA Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V +25oC Output Current (Source) IOH VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V +25oC -4.0 - -4.0 - mA Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V at 200K RAD, VIL = 0.3V at 1M RAD, IOL = 50µA +25oC - 0.1 - 0.1 V Output Voltage High VOH VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V at 200K RAD, VIL = 0.3V at 1M RAD, IOH = -50µA +25oC VCC -0.1 - VCC -0.1 - V IIN VCC = 5.5V, VIN = VCC or GND +25oC - ±5 - ±5 µA VCC = 4.5V, VIH = 2.25V, VIL = 0.8V at 200K RAD, VIL = 0.3V at 1M RAD (Note 3) +25oC - - - - - Input Leakage Current Noise Immunity Functional Test FN 7-143 Specifications HCTS11MS TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETERS (NOTES 1, 2) CONDITIONS SYMBOL Input to Output TPHL VCC = 4.5V TPLH 200K RAD LIMITS 1M RAD LIMITS TEMPERATURE MIN MAX MIN MAX UNITS +25oC 2 20 2 25 ns +25oC 2 22 2 26 ns NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500Ω, CL = 50pF, Input tr = tf = 3ns, VIL = GND, VIH = 3V. 3. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP DELTA LIMIT ICC 5 3µA IOL/IOH 5 -15% of 0 Hour PARAMETER TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS METHOD GROUP A SUBGROUPS Initial Test (Preburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test I (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test II (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H PDA 100%/5004 1, 7, 9, Deltas Interim Test III (Postburn-In) 100%/5004 1, 7, 9 PDA 100%/5004 1, 7, 9, Deltas Final Test 100%/5004 2, 3, 8A, 8B, 10, 11 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample/5005 1, 7, 9 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Group A (Note 1) Group B Group D READ AND RECORD ICC, IOL/H Subgroups 1, 2, 3, 9, 10, 11 NOTE: 1. Alternate Group A in accordance with method 5005 of MIL-STD-883 may be exercised. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 TEST READ AND RECORD METHOD PRE RAD POST RAD PRE RAD POST RAD 5005 1, 7, 9 Table 4 1, 9 Table 4 (Note 1) NOTE: 1. Except FN test which will be performed 100% Go/No-Go. 7-144 Specifications HCTS11MS TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN 1/2 VCC = 3V ± 0.5V GROUND VCC = 6V ± 0.5V 50kHz 25kHz - 14 - - - 1, 2, 3, 4, 5, 9, 10, 11, 13, 14 - - 6, 8, 12 14 1, 2, 3, 4, 5, 9, 10, 11, 13 - STATIC BURN-IN I TEST CONDITIONS (Note 1) 6, 8, 12 1, 2, 3, 4, 5, 7, 9, 10, 11, 13 STATIC BURN-IN II TEST CONDITIONS (Note 1) 6, 8, 12 7 DYNAMIC BURN-IN TEST CONDITIONS (Note 2) - 7 NOTE: Each pin except VCC and GND will have a resistor of 10KΩ ± 5% for static burn-in 1. 2. Each pin except VCC and GND will have a resistor of 1KΩ ± 5% for dynamic burn-in TABLE 9. IRRADIATION TEST CONNECTIONS OPEN GROUND VCC = 5V ± 0.5V 6, 8, 12 7 1, 2, 3, 4, 5, 9, 10, 11, 13, 14 NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures. AC Timing Diagrams AC Load Circuit DUT TEST POINT VIH INPUT VS CL VIL TPLH TPHL VOH CL = 50pF VS OUTPUT RL = 500Ω VOL VOH TTLH TTHL 80% VOL 20% 80% 20% OUTPUT AC VOLTAGE LEVELS PARAMETER HCTS UNITS VCC 4.50 V VIH 3.00 V VS 1.30 V VIL 0 V GND 0 V 7-145 RL HCTS11MS Die Characteristics DIE DIMENSIONS: 87 x 88 mils 2.20 x 2.24mm METALLIZATION: Type: SiAl Metal Thickness: 11kÅ ± 1kÅ GLASSIVATION: Type: SiO2 Thickness: 13kÅ ± 2.6kÅ DIE ATTACH: Material: Silver Epoxy WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100µm x 100µm 4 mils x 4 mils Metallization Mask Layout HCTS11MS A1 (1) VCC (14) C1 (13) B1 (2) (12) Y1 (11) C3 A2 (3) (10) B3 B2 (4) C2 (5) (9) A3 (6) Y2 (7) GND 7-146 (8) Y3 HCTS11MS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. 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Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 727-9207 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 File Number 7-147