NJSEMI MPSA56 Amplifier transistor Datasheet

L/
^Ssmi-Conauatoi ZPwaucti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
U.SA
NPN - MPSA05, MPSA06*;
PNP - MPSA55, MPSA56*
•Preferred Devices
Amplifier Transistors
Voltage and Current are Negative
for PNP Transistors
NPN
COLLECTOR
3
PNP
COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Collector -Emitter Voltage
MPSA05, MPSA55
MPSA06, MPSA56
VCEO
Collector -Base Voltage
MPSA05, MPSA55
MPSA06, MPSA56
VCBO
Emitter -Base Voltage
VEBO
4.0
Vdc
Collector Current - Continuous
Ic
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
W
mW/°C
Total Device Dissipation @ Tc = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ. Tstg
-55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Ambient
(Note 1)
RSJA
200
°C/W
Operating and Storage Junction
Temperature Range
Value
Unit
Vdc
60
80
EMITTER
EMITTER
Vdc
60
80
TO-92
STRAIGHT LEAD
BULK PACK
THERMAL CHARACTERISTICS
°c/w
Thermal Resistance, Junction-to-Case
83.3
ROJC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. ROJA is measured with the device soldered into a typical printed circuit board.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
Oiinlifv S*»mi-f nnrln*-*nr<
NPN - MPSA05, MPSA06*; PNP - MPSA55, MPSA56*
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Min
Max
60
80
_
V(BR)EBO
4.0
-
Vdc
ICES
~
0.1
nAdc
_
0.1
0.1
Symbol
Unit
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltage (Note 2)
(l c = 1.0 mAdc, IB = 0)
Vdc
V(BR)CEO
MPSA05, MPSA55
MPSA06, MPSA56
Emitter- Base Breakdown Voltage
(IE = 100|iAdc, lc = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
nAdc
ICBO
MPSA05, MPSA55
MPSA06, MPSA56
ON CHARACTERISTICS
DC Current Gain
(l c = 10mAdc, VCE = 1-0 Vdc)
(lc = 100 mAdc, VCE = 1.0 Vdc)
hFE
Collector- Emitter Saturation Voltage
(l c = 100 mAdc, IB = 10 mAdc)
Base-Emitter On Voltage
(lc = 100 mAdc, VCE = 1 .0 Vdc)
100
100
_
VcE(sat)
-
0.25
Vdc
VBE(on)
-
1.2
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product (Note 3)
(lc = 10 mA, VCE = 2.0 V, f = 100 MHz)
MHz
ft
100
MPSA05
MPSA06
MPSA55
MPSA56
(lc = 1 00 mAdc, V CE = 1 -0 Vdc, f = 1 00 MHz)
50
2. Pulse Test: Pulse Width <; 300 us, Duty Cycle < 2%.
3. fj is defined as the frequen ;y at which |hfe| extrapolates to unity.
TURN-ON TIME
-1. D V
>
I
*• 5.0 us •«
TURN-OFF TIME
VCC
<j>
< I 100
+40V
> RL
}
Vin
m. |^
\(
•
n
0
t - 3 ' 0ns
+VBB
0
^ 100
J
o OUTPUT
S RL
"
.^ / ^ K \
^^ ( L ) _L
VtV ^r*
5.0 ,iF i.
I c s<6-opF
<
:10°
,. J
_L
Vcc
<j> +40V
V|n tf
.?* /^PN !
* 'f
>- >
^S.O^sf-
^3
f
V V V
1
1
J
1
\hV/ ^'Cs <6.0pF
100
_|_
tr = 3.0 ns
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
0 OUTPUT
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