ONSEMI BAT54AWT1G

BAT54AWT1
Preferred Device
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
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30 VOLTS
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc
• Pb−Free Package is Available
CATHODE
1
ANODE
3
2
CATHODE
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Volts
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
200
1.6
mW
mW/°C
Forward Current (DC)
IF
200 Max
mA
Junction Temperature
TJ
125 Max
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
MARKING
DIAGRAM
3
3
SOT−323
CASE 419
1
2
B7....D
1
B7
D
2
= Specific Device Code
= Date Code
ORDERING INFORMATION
Package
Shipping†
BAT54AWT1
SOT−323
3000/Tape & Reel
BAT54AWT1G
SOT−323
(Pb−Free)
3000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2004
May, 2004 − Rev. 0
1
Publication Order Number:
BAT54AWT1/D
BAT54AWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
30
−
−
V
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
CT
−
7.6
10
pF
Reverse Leakage (VR = 25 V)
IR
−
0.5
2.0
Adc
Forward Voltage (IF = 0.1 mAdc)
VF
−
0.22
0.24
Vdc
Forward Voltage (IF = 30 mAdc)
VF
−
0.41
0.5
Vdc
Forward Voltage (IF = 100 mAdc)
VF
−
0.52
0.8
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr
−
−
5.0
ns
Forward Voltage (IF = 1.0 mAdc)
VF
−
0.29
0.32
Vdc
Forward Voltage (IF = 10 mAdc)
VF
−
0.35
0.40
Vdc
Forward Current (DC)
IF
−
−
200
mAdc
Repetitive Peak Forward Current
IFRM
−
−
300
mAdc
Non−Repetitive Peak Forward Current (t < 1.0 s)
IFSM
−
−
600
mAdc
Reverse Breakdown Voltage (IR = 10 A)
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2
BAT54AWT1
820 +10 V
2k
0.1 F
IF
100 H
tr
tp
IF
T
10%
0.1 F
trr
T
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
iR(REC) = 1 mA
IR
VR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
INPUT SIGNAL
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
1000
TA = 150°C
IR, REVERSE CURRENT (A)
85°C
10
1 50°C
1.0
25°C
0.1
0.0
−40°C
−55°C
100
TA = 125°C
10
1.0
TA = 85°C
0.1
0.01
TA = 25°C
0.001
0.1
0.2
0.3
0.4
VF, FORWARD VOLTAGE (V)
0
0.6
0.5
5
Figure 2. Forward Voltage
15
10
20
VR, REVERSE VOLTAGE (V)
Figure 3. Leakage Current
14
CT, TOTAL CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
1 25°C
12
10
8
6
4
2
0
0
5
10
15
20
VR, REVERSE VOLTAGE (V)
Figure 4. Total Capacitance
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3
25
30
25
30
BAT54AWT1
PACKAGE DIMENSIONS
SOT−323 (SC−70)
CASE 419−04
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
L
3
DIM
A
B
C
D
G
H
J
K
L
N
S
B
S
1
2
D
G
0.05 (0.002)
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.00
0.30
0.40
1.20
1.40
0.00
0.10
0.10
0.25
0.425 REF
0.650 BSC
0.700 REF
2.00
2.40
J
N
C
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.032
0.040
0.012
0.016
0.047
0.055
0.000
0.004
0.004
0.010
0.017 REF
0.026 BSC
0.028 REF
0.079
0.095
K
H
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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Phone: 81−3−5773−3850
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For additional information, please contact your
local Sales Representative.
BAT54AWT1/D