Renesas NE3509M14 N-channel gaas hj-fet, l to c band low noise amplifier Datasheet

Data Sheet
NE3509M14
N-Channel GaAs HJ-FET, L to C Band Low Noise
R09DS0011EJ0100
Rev.1.00
Amplifier
Jan 21, 2011
FEATURES
• Super low noise figure and high associated gain high isolation
NF = 0.4 dB TYP., Ga = 18.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 2 GHz
• 4-pin lead-less minimold (M14, 1208 PKG) package
APPLICATIONS
• Satellite radio (SDARS, DMB, DAB, etc.) antenna LNA
• GPS antenna LNA
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
NE3509M14-T3
Order Number
NE3509M14-T3-A
Package
Quantity
10 kpcs/reel
4-pin lead-less
minimold
(M14, 1208 PKG)
(Pb-Free)
Marking
zR
Supplying Form
• Embossed tape 8 mm wide
• Pin 1 (Drain), Pin 4 (Source)
face the perforation side of
the tape
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3509M14
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation Note
Channel Temperature
Storage Temperature
Note:
Symbol
VDS
VGS
ID
IG
Ptot
Tch
Tstg
Ratings
4.0
−3.0
IDSS
200
150
+150
−65 to +150
Unit
V
V
mA
μA
mW
°C
°C
Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0011EJ0100 Rev.1.00
Jan 21, 2011
Page 1 of 10
NE3509M14
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
VDS
ID
Pin
MIN.
−
−
−
TYP.
2
10
−
MAX.
3
20
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Trans conductance
Noise Figure
Associated Gain
Symbol
IGSO
IDSS
VGS (off)
gm
NF
Ga
Test Conditions
VGS = −3.0 V
VDS = 2 V, VGS = 0 V
VDS = 2 V, ID = 50 μA
VDS = 2 V, ID = 10 mA
VDS = 2 V, ID = 10 mA, f = 2 GHz
MIN.
−
30
−0.25
80
−
16.5
TYP.
0.5
45
−0.50
−
0.4
18.5
MAX.
10
60
−0.75
−
0.7
−
Unit
μA
mA
V
mS
dB
dB
STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25°C, unless otherwise
specified)
Parameter
Symbol
Gain 1 dB Compression Output
Power
PO (1 dB)
R09DS0011EJ0100 Rev.1.00
Jan 21, 2011
Test Conditions
f = 2 GHz,
VDS = 2 V, ID = 10 mA set (non-RF)
Reference Value
Unit
+11
dBm
Page 2 of 10
NE3509M14
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
50
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
45
200
150
100
50
VDS = 2 V
40
Drain Current ID (mA)
35
30
25
20
15
10
5
50
100
150
200
0
–1.0
250
–0.8
Ambient Temperature TA (°C)
2.0
Minimum Noise Figure NFmin (dB)
Drain Current ID (mA)
–0.2
80
60
VGS = 0 V
40
–0.1 V
–0.2 V
20
–0.3 V
–0.4 V
–0.5 V
1
0
2
3
4
20
18
1.8
Ga
1.6
14
1.2
12
1.0
10
8
0.8
NFmin
0.6
0.2
5
1.8
16
1.4
14
1.2
12
1.0
10
0.8
8
6
NFmin
4
0.4
0.2
5
10
15
20
25
2.0
f = 2 GHz 2
VDS = 2 V
0
30
35 40
Drain Current ID (mA)
Minimum Noise Figure NFmin (dB)
20
18
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN VOLTAGE
Associated Gain Ga (dB)
2.0
0.6
10
4
VDS = 2 V 2
ID = 10 mA
0
15
Frequency f (GHz)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
Ga
6
0.4
0.0
0
5
16
1.4
Drain to Source Voltage VDS (V)
1.6
0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
100
Minimum Noise Figure NFmin (dB)
–0.4
Gate to Source Voltage VGS (V)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0.0
0
–0.6
Associated Gain Ga (dB)
0
20
f = 2 GHz, ID = 10 mA
18
1.8
Ga
1.6
16
1.4
14
1.2
12
1.0
10
0.8
8
0.6
NFmin
6
0.4
4
0.2
2
0.0
1.0
1.5
2.0
2.5
3.0
Drain Voltage VDS (V)
Associated Gain Ga (dB)
Total Power Dissipation Ptot (mW)
250
0
3.5
Remark The graphs indicate nominal characteristics.
R09DS0011EJ0100 Rev.1.00
Jan 21, 2011
Page 3 of 10
NE3509M14
INSERTION POWER GAIN, ISOLATION
vs. FREQUENCY
15
3.0
MSG
10
2.0
MAG
5
1.5
1.0
K factor
0
0
2.5
5
10
15
Frequency f (GHz)
0.5
0.0
20
VDS = 2 V,
ID = 10 mA
–5
20
|S21|2
–10
15
10
|S12|2
–20
5
0
0
–15
Isolation |S12|2 (dB)
3.5
Insertion Power Gain |S21|2 (dB)
20
0
25
5.0
VDS = 2 V, 4.5
ID = 10 mA
4.0
25
K factor
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
MAG, MSG, K FACTOR vs. FREQUENCY
5
10
15
Frequency f (GHz)
–25
20
Remark The graphs indicate nominal characteristics.
R09DS0011EJ0100 Rev.1.00
Jan 21, 2011
Page 4 of 10
NE3509M14
OUTPUT POWER, Gp, ID, IG vs. INPUT POWER
25
80
f = 2 GHz, VDS = 2 V,
ID = 10 mA set, PO (1 dB) optimize
20
70
60
10
50
Pout
5
40
0
30
–5
Drain Current ID (mA)
Gate Current IG (mA)
Output Power Pout (dBm)
Power Gain GP (dB)
Gp
15
20
ID
–10
10
IG
–15
–25
–20
–15
–10
–5
0
5
10
0
15
Input Power Pin (dBm)
30
20
100
f1 = 2 000 MHz
f2 = 2 001 MHz
90
80
Pout
10
70
0
–10
IM3 (L)
60
IM3 (H)
–20
50
VDS = 2 V, ID = 10 mA set,
PO (1 dB) optimize
–30
–40
30
–50
20
ID
–60
–70
–25
40
Drain Current ID (mA)
Gate Current IG (mA)
Output Power Pout (2 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (1 tone) (dBm)
OUTPUT POWER, IM3, ID, IG vs. INPUT POWER
10
IG
–20
–15
–10
–5
0
5
10
0
15
Input Power Pin (2 tone) (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0011EJ0100 Rev.1.00
Jan 21, 2011
Page 5 of 10
NE3509M14
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www2.renesas.com/microwave/en/download.html
R09DS0011EJ0100 Rev.1.00
Jan 21, 2011
Page 6 of 10
NE3509M14
MOUNTING PAD LAYOUT DIMENSIONS
0.8
0.25
0.45
4-PIN LEAD-LESS MINI-MOLD (M14, 1208 PKG) (UNIT: mm)
0.8
Remark The mounting pad layout in this document is for reference only.
R09DS0011EJ0100 Rev.1.00
Jan 21, 2011
Page 7 of 10
NE3509M14
PACKAGE DIMENSIONS
4-PIN LEAD-LESS MINI-MOLD (M14, 1208 PKG) (UNIT: mm)
(Top View)
(Bottom View)
1.0±0.05
0.15±0.05
2
(0.6)
1
zR
4
0.8
1.2+0.07
–0.05
3
0.8+0.07
–0.05
0.2
0.2
0.5±0.05
0.11+0.1
–0.05
(0.1)
Remark ( ) : reference value
PIN CONNECTIONS
1.
2.
3.
4.
R09DS0011EJ0100 Rev.1.00
Jan 21, 2011
Drain
Source
Gate
Source
Page 8 of 10
NE3509M14
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Partial Heating
Soldering Conditions
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120 ± 30 seconds
: 3 times
: 0.2% (Wt.) or below
Peak temperature (package surface temperature) : 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
Condition Symbol
IR260
HS350
CAUTION
Do not use different soldering methods together (except for partial heating).
R09DS0011EJ0100 Rev.1.00
Jan 21, 2011
Page 9 of 10
NE3509M14
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R09DS0011EJ0100 Rev.1.00
Jan 21, 2011
Page 10 of 10
Revision History
Rev.
1.00
Date
Jan 21, 2011
NE3509M14 Data Sheet
Description
Summary
Page
—
First edition issued
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