IXYS IXGH32N50BS Hiperfast igbt Datasheet

Preliminary Data Sheet
IXGH32N50B
VCES
IXGH32N50BS I C25
VCE(sat)
tfi
HiPerFASTTM IGBT
=
=
=
=
500 V
60 A
2.0 V
80 ns
TO-247 SMD
(32N50BS)
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
500
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
500
V
V GES
Continuous
±20
V
V GEM
Transient
±30
V
I C25
TC = 25°C
60
A
I C90
TC = 90°C
32
A
I CM
TC = 25°C, 1 ms
120
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 33 Ω
Clamped inductive load, L = 100 µH
PC
TC = 25°C
TJ
ICM = 64
@ 0.8 VCES
A
200
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque (M3)
1.13/10 Nm/lb.in.
Weight
TO-247 AD
TO-247 SMD
6
4
g
g
E
TO-247 AD
C (TAB)
G
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
l
l
IC
IC
I CES
V CE = 0.8 • VCES
VGE = 0 V
I GES
V CE = 0 V, VGE = ±20 V
VCE(sat)
IC
= IC90, VGE = 15 V
© 1997 IXYS All rights reserved
500
2.5
TJ = 25°C
TJ = 125°C
5
V
V
200
1
µA
mA
±100
nA
2.0
V
C = Collector,
TAB = Collector
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
High current handling capability
Newest generation HDMOSTM process
MOS Gate turn-on
- drive simplicity
Applications
l
l
l
= 250 µA, VGE = 0 V
= 250 µA, VCE = VGE
BVCES
VGE(th)
E
Features
l
Test Conditions
C
G = Gate,
E = Emitter,
l
Symbol
C (TAB)
G
l
l
l
PFC circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
l
l
High power density
Very fast switching speeds for high
frequency applications
95564A (4/97)
IXGH32N50B
Symbol
Test Conditions
gfs
I C = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
20
2500
pF
230
pF
70
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
Inductive load, TJ = 25°°C
tri
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 V CES, RG = Roff = 4.7 Ω
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
S
∅P
Cres
Qge
TO-247 AD Outline
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
15
IXGH32N50BS
125
150
nC
23
35
nC
50
75
nC
25
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES ,
higher TJ or increased RG
Inductive load, TJ = 125°°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 V CES, RG = Roff = 4.7 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES ,
higher TJ or increased RG
ns
30
ns
100
200
ns
80
150
ns
0.7
1.5
mJ
25
ns
35
ns
0.3
mJ
120
ns
120
ns
1.2
mJ
e
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-247 SMD Outline
RthJC
0.62 K/W
0.25
RthCK
Min. Recommended Footprint
K/W
(Dimensions in inches and (mm))
1. Gate
2. Collector
Dim.
A
A1
A2
b
b1
C
D
E
e
L
L1
L2
L3
L4
ØP
Q
R
S
3. Emitter
4. Collector
Millimeter
Min.
Max.
4.83
5.21
2.29
2.54
1.91
2.16
Inches
Min. Max.
.190
.205
.090
.100
.075
.085
1.14
1.91
0.61
20.80
15.75
5.45
4.90
2.70
2.10
0.00
1.90
3.55
5.59
1.40
2.13
0.80
21.34
16.13
BSC
5.10
2.90
2.30
0.10
2.10
3.65
6.20
.045
.075
.024
.819
.620
.215
.193
.106
.083
.00
.075
.140
.220
.055
.084
.031
.840
.635
BSC
.201
.114
.091
.004
.083
.144
.244
4.32
6.15
4.83
BSC
.170
.242
.190
BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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