Microsemi APTGV100H60T3G Full - bridge npt & trench field stopâ® igbt power module Datasheet

APTGV100H60T3G
Full - Bridge
NPT & Trench + Field Stop® IGBT
Power module
13 14
Q1
Fast NPT IGBT Q2, Q4:
VCES = 600V ; IC = 90A @ Tc = 80°C
Application
CR3
CR1
18
Trench & Field Stop® IGBT Q1, Q3:
VCES = 600V ; IC = 100A @ Tc = 80°C
Q3
11
• Solar converter
Features
19
Q2
22
7
23
8
CR2
26
10
Q4
CR4
4
27
• Q1, Q3 Trench & Field Stop IGBT®
- Low voltage drop
- Switching frequency up to 20 kHz
- RBSOA & SCSOA rated
- Low tail current
3
29
30
31
15
32
R1
16
•
•
•
•
Top switches : Trench + Field Stop IGBT®
Bottom switches : FAST NPT IGBT
28 27 26 25
20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
• Q2, Q4 FAST Non Punch Through (NPT) IGBT
- Switching frequency up to 100 kHz
- RBSOA & SCSOA rated
- Low tail current
8
10 11 12
Benefits
•
•
•
•
Optimized conduction & switching losses
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-9
APTGV100H60T3G – Rev 0
June, 2007
All multiple inputs and outputs must be shorted together
13/14 ; 15/16 ; 26/27 ; 31/32
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
APTGV100H60T3G
All ratings @ Tj = 25°C unless otherwise specified
1. Top switches
1.1 Top Trench + Field Stop IGBT® characteristics
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
TC = 25°C
Max ratings
600
150 *
100 *
200
±20
340
Tj = 150°C
200A @ 550V
TC = 25°C
TC = 80°C
TC = 25°C
Reverse Bias Safe Operating Area
Unit
V
A
V
W
* Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater
than 30°C for the connectors.
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 100A
Tj = 150°C
VGE = VCE , IC = 1.5 mA
VGE = 20V, VCE = 0V
Min
5.0
Typ
1.5
1.7
5.8
Max
Unit
250
1.9
µA
6.5
400
V
nA
Max
Unit
V
Dynamic Characteristics
Fall Time
Td(on)
Tr
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
RthJC
Junction to Case Thermal resistance
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 3.3Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 3.3Ω
VGE = ±15V Tj = 25°C
VBus = 300V Tj = 150°C
IC = 100A
Tj = 25°C
RG = 3.3Ω
Tj = 150°C
Min
Typ
6100
390
190
115
45
225
pF
ns
55
130
50
ns
300
70
0.4
0.875
2.5
3.5
mJ
mJ
0.44
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June, 2007
Tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
°C/W
2-9
APTGV100H60T3G – Rev 0
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
APTGV100H60T3G
1.2 Top fast diode characteristics
Symbol Characteristic
VRRM
IRM
IF
VF
Min
Maximum Reverse Leakage Current
VR=600V
DC Forward Current
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max
IF = 100A
VR = 400V
di/dt =200A/µs
Unit
V
Tj = 25°C
Tj = 125°C
100
500
Tc = 80°C
IF = 100A
IF = 200A
IF = 100A
Diode Forward Voltage
Typ
600
Maximum Peak Repetitive Reverse Voltage
trr
RthJC
Test Conditions
Tj = 125°C
100
1.6
2
1.3
Tj = 25°C
160
Tj = 125°C
Tj = 25°C
220
290
Tj = 125°C
1530
Junction to Case Thermal resistance
µA
A
2
V
ns
nC
0.55
°C/W
2. Bottom switches
2.1 Bottom Fast NPT IGBT characteristics
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Tc = 25°C
Max ratings
600
110
90
315
±20
416
Tj = 150°C
200A @ 600V
Tc = 25°C
Tc = 80°C
Tc = 25°C
Reverse Bias Safe Operating Area
Unit
V
A
V
W
Electrical Characteristics
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Min
Typ
2.0
2.2
3
Max
250
500
2.5
Unit
5
±150
V
nA
µA
V
June, 2007
ICES
Test Conditions
VGE = 0V
Tj = 25°C
VCE = 600V
Tj = 125°C
Tj = 25°C
VGE =15V
IC = 90A
Tj = 125°C
VGE = VCE, IC = 1mA
VGE = 20 V, VCE = 0V
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3-9
APTGV100H60T3G – Rev 0
Symbol Characteristic
APTGV100H60T3G
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Td(off)
Tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE = 15V
VBus = 300V
IC = 90A
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 90A
RG = 5 Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 90A
RG = 5 Ω
VGE = 15V
Tj = 125°C
VBus = 400V
IC = 90A
Tj = 125°C
RG = 5 Ω
Fall Time
Td(on)
Tr
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal resistance
Min
Typ
4300
470
400
330
290
200
26
25
150
Max
Unit
pF
nC
ns
30
26
25
ns
170
40
4.3
mJ
3.5
0.3
°C/W
Max
Unit
2.2 Bottom diode characteristics
VRRM
IRM
Test Conditions
Maximum Reverse Leakage Current
DC Forward Current
VF
Diode Forward Voltage
VR=600V
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 30A
IF = 60A
IF = 30A
IF = 30A
VR = 400V
di/dt =200A/µs
V
Tj = 25°C
Tj = 125°C
250
500
Tc = 80°C
trr
Typ
600
Maximum Peak Repetitive Reverse Voltage
IF
RthJC
Min
Tj = 125°C
30
1.6
1.9
1.4
Tj = 25°C
85
Tj = 125°C
Tj = 25°C
160
130
Tj = 125°C
700
Junction to Case Thermal resistance
µA
A
1.8
V
ns
nC
1.2
°C/W
Max
Unit
kΩ
K
June, 2007
3. Temperature sensor
NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
Min
Typ
50
3952
R25
T: Thermistor temperature

 1
1  RT: Thermistor value at T
exp  B25 / 85 
− 
 T25 T 

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4-9
APTGV100H60T3G – Rev 0
Symbol Characteristic
APTGV100H60T3G
4. Package characteristics
Symbol
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Min
2500
-40
-40
-40
2.5
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
Typ
Max
150*
125
100
4.7
110
Unit
V
°C
N.m
g
Tj=175°C for Trench & Field Stop IGBT
5. SP3 Package outline (dimensions in mm)
28
17
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
6. Top switches curves
6.1 Top Trench + Field Stop IGBT® typical performance curves
Output Characteristics (VGE=15V)
Output Characteristics
200
125
IC (A)
IC (A)
TJ=150°C
100
75
50
0.5
1
1.5
VCE (V)
VGE=9V
25
TJ=25°C
0
VGE=15V
100
50
0
VGE=13V
125
75
25
VGE=19V
150
TJ=125°C
150
TJ = 150°C
175
June, 2007
TJ=25°C
175
0
2
2.5
3
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0
0.5
1
1.5
2
VCE (V)
2.5
3
3.5
5-9
APTGV100H60T3G – Rev 0
200
APTGV100H60T3G
Energy losses vs Collector Current
Transfert Characteristics
200
7
175
6
TJ=25°C
150
5
E (mJ)
125
IC (A)
VCE = 300V
VGE = 15V
RG = 3.3Ω
TJ = 150°C
100
TJ=125°C
75
Eoff
4
3
2
50
TJ=150°C
TJ=25°C
0
0
5
6
7
Eon
1
25
8
9
10
11
0
12
25
50
75
Switching Energy Losses vs Gate Resistance
8
200
Eoff
IF (A)
E (mJ)
Reverse Bias Safe Operating Area
250
VCE = 300V
VGE =15V
IC = 100A
TJ = 150°C
6
100 125 150 175 200
IC (A)
VGE (V)
4
150
100
2
VGE=15V
TJ=150°C
RG=3.3Ω
50
Eon
0
0
0
5
10
15
20
25
Gate Resistance (ohms)
30
0
100
200
300 400
VCE (V)
500
600
700
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.5
0.4
0.9
0.7
0.3
0.5
0.2
0.3
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
6.2 Top Fast diode typical performance curves
IF, Forward Current (A)
Forw ard Current vs Forw ard Voltage
300
250
T J=175°C
200
150
T J=25°C
100
T J=125°C
T J=-55°C
50
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V F, Anode to Cathode Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
0.3
0.9
0.7
0.5
0.2
0.3
0.1
0.1
0.05
0
0.00001
June, 2007
0.5
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
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6-9
APTGV100H60T3G – Rev 0
Thermal Impedance (°C/W)
0.6
APTGV100H60T3G
7. Bottom switches curves
7.1 Bottom fast NPT IGBT typical performance curves
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
300
250µs Pulse Test
< 0.5% Duty cycle
300
TJ=-55°C
250
Ic, Collector Current (A)
TJ=25°C
200
150
TJ=125°C
100
50
250µs Pulse Test
< 0.5% Duty cycle
250
200
TJ=25°C
150
100
TJ=125°C
50
0
0
1
2
3
VCE, Collector to Emitter Voltage (V)
0
4
1
2
Transfer Characteristics
250
TJ=-55°C
200
150
100
TJ=25°C
50
TJ=125°C
TJ=-55°C
0
1
2 3 4 5 6 7 8 9
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
8
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
7
6
Ic=180A
5
4
3
Ic=90A
2
Ic=45A
1
0
6
8
10
12
14
VGE, Gate to Emitter Voltage (V)
VCE=120V
IC = 90A
TJ = 25°C
16
14
VCE=300V
12
10
VCE=480V
8
6
4
2
0
0
10
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
0
4
Gate Charge
18
250µs Pulse Test
< 0.5% Duty cycle
VGE, Gate to Emitter Voltage (V)
Ic, Collector Current (A)
300
3
VCE, Collector to Emitter Voltage (V)
50
100 150 200 250
Gate Charge (nC)
300
350
On state Voltage vs Junction Temperature
4
3.5
Ic=180A
3
2.5
Ic=90A
2
1.5
Ic=45A
1
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.5
0
-50
16
-25
0
25
50
75
100
125
TJ, Junction Temperature (°C)
Breakdown Voltage vs Junction Temp.
DC Collector Current vs Case Temperature
140
Ic, DC Collector Current (A)
1.20
1.10
1.00
0.90
0.80
0.70
-50
-25
0
25
50
75
100
120
100
125
TJ, Junction Temperature (°C)
www.microsemi.com
80
60
40
20
June, 2007
0
Collector to Emitter Breakdown
Voltage (Normalized)
TJ=-55°C
0
-50
-25
0
25
50
75
100 125 150
TC, Case Temperature (°C)
7-9
APTGV100H60T3G – Rev 0
Ic, Collector Current (A)
350
APTGV100H60T3G
Turn-Off Delay Time vs Collector Current
VGE = 15V
30
25
Tj = 25°C
VCE = 400V
RG = 5Ω
20
15
25
50
75
100
125
150
td(off), Turn-Off Delay Time (ns)
250
VGE=15V,
TJ=125°C
200
150
100
50
25
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
VGE=15V,
TJ=125°C
20
125
150
60
TJ = 125°C
40
20
TJ = 25°C
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
150
25
Turn-On Energy Loss vs Collector Current
Eoff, Turn-off Energy Loss (mJ)
8
Eon, Turn-On Energy Loss (mJ)
100
VCE = 400V, VGE = 15V, RG = 5Ω
tf, Fall Time (ns)
tr, Rise Time (ns)
VCE = 400V
RG = 5Ω
0
VCE = 400V
RG = 5Ω
6
TJ=125°C,
VGE=15V
4
TJ=25°C,
VGE=15V
2
0
0
25
50
75
100
125
6
VCE = 400V
VGE = 15V
RG = 5Ω
5
4
TJ = 25°C
2
1
0
150
0
50
75
100
125
150
Reverse Bias Safe Operating Area
Eon, 180A
Eoff, 90A
Eon, 90A
Eoff, 45A
4
Eon, 45A
0
20
30
40
50
Gate Resistance (Ohms)
www.microsemi.com
200
150
100
June, 2007
IC, Collector Current (A)
Eoff, 180A
8
10
25
ICE, Collector to Emitter Current (A)
250
VCE = 400V
VGE = 15V
TJ= 125°C
0
150
TJ = 125°C
3
Switching Energy Losses vs Gate Resistance
12
50
75
100
125
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
ICE, Collector to Emitter Current (A)
Switching Energy Losses (mJ)
75
Current Fall Time vs Collector Current
80
40
16
50
ICE, Collector to Emitter Current (A)
80
60
VGE=15V,
TJ=25°C
VCE = 400V
RG = 5Ω
50
0
0
200
400
600
800
VCE, Collector to Emitter Voltage (V)
8-9
APTGV100H60T3G – Rev 0
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
35
APTGV100H60T3G
Capacitance vs Collector to Emitter Voltage
C, Capacitance (pF)
Cies
1000
Coes
Cres
100
0
10
20
30
200
Fmax, Operating Frequency (kHz)
10000
40
Operating Frequency vs Collector Current
VCE = 400V
D = 50%
RG = 5Ω
TJ = 125°C
TC = 75°C
ZVS
160
120
ZCS
80
40
Hard
switching
0
50
20
40
60
80
100
IC, Collector Current (A)
VCE, Collector to Emitter Voltage (V)
120
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.3
0.25
0.9
0.7
0.2
0.15
0.1
0.5
0.3
0.1
0.05
0
0.00001
0.05
Single Pulse
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
1
10
7.2 Bottom diode typical performance curves
Forw ard Current vs Forw ard Voltage
IF, Forward Current (A)
80
70
60
T J=125°C
50
40
T J=25°C
30
20
T J=-55°C
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V F, Anode to Cathode Voltage (V)
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
1.2
1
0.8
0.9
0.7
0.5
0.6
0.2
0
0.00001
0.3
0.1
0.05
June, 2007
0.4
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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9-9
APTGV100H60T3G – Rev 0
Thermal Impedance (°C/W)
1.4
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