ONSEMI 1N5352B

1N5333B Series
Preferred Device
5 Watt Surmetict 40
Zener Voltage Regulators
This is a complete series of 5 Watt Zener diodes with tight limits and
better operating characteristics that reflect the superior capabilities of
silicon−oxide passivated junctions. All this in an axial lead,
transfer−molded plastic package that offers protection in all common
environmental conditions.
Features
•
•
•
•
•
http://onsemi.com
Cathode
Anode
Zener Voltage Range − 3.3 V to 200 V
ESD Rating of Class 3 (>16 kV) per Human Body Model
Surge Rating of up to 180 W @ 8.3 ms
Maximum Limits Guaranteed on up to Six Electrical Parameters
Pb−Free Packages are Available
AXIAL LEAD
CASE 017AA
PLASTIC
Mechanical Characteristics
CASE: Void free, transfer−molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MARKING DIAGRAM
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16 in. from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
A
1N
53xxB
YYWWG
G
MAXIMUM RATINGS
Rating
Max. Steady State Power Dissipation
@ TL = 75°C, Lead Length = 3/8 in
Derate above 75°C
Operating and Storage
Temperature Range
Symbol
Value
Unit
PD
5
W
40
mW/°C
−65 to +200
°C
TJ, Tstg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
= Assembly Location
1N53xxB = Device Number
(Refer to Tables on Pages 3 & 4
YY
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping †
1N53xxB, G
Axial Lead
(Pb−Free)
1000 Units/Box
1N53xxBRL, G
Axial Lead
(Pb−Free)
4000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 7
1
Publication Order Number:
1N5333B/D
1N5333B Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)
Symbol
I
IF
Parameter
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
IR
Reverse Leakage Current @ VR
VR
Breakdown Voltage
IF
Forward Current
VF
Forward Voltage @ IF
IR
Maximum Surge Current @ TA = 25°C
DVZ
Reverse Zener Voltage Change
IZM
Maximum DC Zener Current
VZ VR
V
IR VF
IZT
Zener Voltage Regulator
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2
1N5333B Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)
Zener Impedance (Note 2)
Leakage
Current
@ IZT
ZZT @ IZT
IR @ VR
Zener Voltage (Note 2)
VZ (Volts)
ZZK @ IZK
IZK
IR
(Note 3)
DVZ
(Note 4)
IZM
(Note 5)
Device†
(Note 1)
Device
Marking
Min
Nom
Max
mA
W
W
mA
mA Max
Volts
A
Volts
mA
1N5333B, G
1N5334B, G
1N5335B, G
1N5336B, G
1N5337B, G
1N5333B
1N5334B
1N5335B
1N5336B
1N5337B
3.14
3.42
3.71
4.09
4.47
3.3
3.6
3.9
4.3
4.7
3.47
3.78
4.10
4.52
4.94
380
350
320
290
260
3
2.5
2
2
2
400
500
500
500
450
1
1
1
1
1
300
150
50
10
5
1
1
1
1
1
20
18.7
17.6
16.4
15.3
0.85
0.8
0.54
0.49
0.44
1440
1320
1220
1100
1010
1N5338B, G
1N5339B, G
1N5340B, G
1N5341B, G
1N5342B, G
1N5338B
1N5339B
1N5340B
1N5341B
1N5342B
4.85
5.32
5.70
5.89
6.46
5.1
5.6
6.0
6.2
6.8
5.36
5.88
6.30
6.51
7.14
240
220
200
200
175
1.5
1
1
1
1
400
400
300
200
200
1
1
1
1
1
1
1
1
1
10
1
2
3
3
5.2
14.4
13.4
12.7
12.4
11.5
0.39
0.25
0.19
0.1
0.15
930
865
790
765
700
1N5343B, G
1N5344B, G
1N5345B, G
1N5346B, G
1N5347B, G
1N5343B
1N5344B
1N5345B
1N5346B
1N5347B
7.13
7.79
8.27
8.65
9.50
7.5
8.2
8.7
9.1
10
7.88
8.61
9.14
9.56
10.5
175
150
150
150
125
1.5
1.5
2
2
2
200
200
200
150
125
1
1
1
1
1
10
10
10
7.5
5
5.7
6.2
6.6
6.9
7.6
10.7
10
9.5
9.2
8.6
0.15
0.2
0.2
0.22
0.22
630
580
545
520
475
1N5348B, G
1N5349B, G
1N5350B, G
1N5351B, G
1N5352B, G
1N5348B
1N5349B
1N5350B
1N5351B
1N5352B
10.45
11.4
12.35
13.3
14.25
11
12
13
14
15
11.55
12.6
13.65
14.7
15.75
125
100
100
100
75
2.5
2.5
2.5
2.5
2.5
125
125
100
75
75
1
1
1
1
1
5
2
1
1
1
8.4
9.1
9.9
10.6
11.5
8.0
7.5
7.0
6.7
6.3
0.25
0.25
0.25
0.25
0.25
430
395
365
340
315
1N5353B, G
1N5354B, G
1N5355B, G
1N5356B, G
1N5357B, G
1N5353B
1N5354B
1N5355B
1N5356B
1N5357B
15.2
16.15
17.1
18.05
19
16
17
18
19
20
16.8
17.85
18.9
19.95
21
75
70
65
65
65
2.5
2.5
2.5
3
3
75
75
75
75
75
1
1
1
1
1
1
0.5
0.5
0.5
0.5
12.2
12.9
13.7
14.4
15.2
6.0
5.8
5.5
5.3
5.1
0.3
0.35
0.4
0.4
0.4
295
280
264
250
237
1N5358B, G
1N5359B, G
1N5360B, G
1N5361B, G
1N5362B, G
1N5358B
1N5359B
1N5360B
1N5361B
1N5362B
20.9
22.8
23.75
25.65
26.6
22
24
25
27
28
23.1
25.2
26.25
28.35
29.4
50
50
50
50
50
3.5
3.5
4
5
6
75
100
110
120
130
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
16.7
18.2
19
20.6
21.2
4.7
4.4
4.3
4.1
3.9
0.45
0.55
0.55
0.6
0.6
216
198
190
176
170
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
1. TOLERANCE AND TYPE NUMBER DESIGNATION
The JEDEC type numbers shown indicate a tolerance of ±5%.
2. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK)
Test conditions for zener voltage and impedance are as follows: IZ is applied 40 ±10 ms prior to reading. Mounting contacts are located 3/8″
to 1/2″ from the inside edge of mounting clips to the body of the diode (TA = 25°C +8°C, −2°C).
3. SURGE CURRENT (IR)
Surge current is specified as the maximum allowable peak, non−recurrent square−wave current with a pulse width, PW, of 8.3 ms. The data
given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting
the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located
as specified in Note 2 (TA = 25°C +8°C, −2°C).
4. VOLTAGE REGULATION (DVZ)
The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50% of the IZ max value listed in the
electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting contact located as specified
in Note 2 (TA = 25°C +8°C, −2°C).
5. MAXIMUM REGULATOR CURRENT (IZM)
The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the B−suffix device. The actual
IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device. TL = 75°C at 3/8″ maximum from the device
body.
†The “G’’ suffix indicates Pb−Free package available.
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3
1N5333B Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)
Zener Impedance (Note 7)
Leakage
Current
@ IZT
ZZT @ IZT
IR @ VR
Zener Voltage (Note 7)
VZ (Volts)
ZZK @ IZK
IZK
IR
(Note 8)
DVZ
(Note 9)
IZM
(Note 10)
Device†
(Note 6)
Device
Marking
Min
Nom
Max
mA
W
W
mA
mA Max
Volts
A
Volts
mA
1N5363B, G
1N5364B, G
1N5365B, G
1N5366B, G
1N5367B, G
1N5363B
1N5364B
1N5365B
1N5366B
1N5367B
28.5
31.35
34.2
37.05
40.85
30
33
36
39
43
31.5
34.65
37.8
40.95
45.15
40
40
30
30
30
8
10
11
14
20
140
150
160
170
190
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
22.8
25.1
27.4
29.7
32.7
3.7
3.5
3.5
3.1
2.8
0.6
0.6
0.65
0.65
0.7
158
144
132
122
110
1N5368B, G
1N5369B, G
1N5370B, G
1N5371B, G
1N5372B, G
1N5368B
1N5369B
1N5370B
1N5371B
1N5372B
44.65
48.45
53.2
57
58.9
47
51
56
60
62
49.35
53.55
58.8
63
65.1
25
25
20
20
20
25
27
35
40
42
210
230
280
350
400
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
35.8
38.8
42.6
45.5
47.1
2.7
2.5
2.3
2.2
2.1
0.8
0.9
1.0
1.2
1.35
100
93
86
79
76
1N5373B, G
1N5374B, G
1N5375B, G
1N5376B, G
1N5377B, G
1N5373B
1N5374B
1N5375B
1N5376B
1N5377B
64.6
71.25
77.9
82.65
86.45
68
75
82
87
91
71.4
78.75
86.1
91.35
95.55
20
20
15
15
15
44
45
65
75
75
500
620
720
760
760
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
51.7
56
62.2
66
69.2
2.0
1.9
1.8
1.7
1.6
1.52
1.6
1.8
2.0
2.2
70
63
58
54.5
52.5
1N5378B, G
1N5379B, G
1N5380B, G
1N5381B, G
1N5382B, G
1N5378B
1N5379B
1N5380B
1N5381B
1N5382B
95
104.5
114
123.5
133
100
110
120
130
140
105
115.5
126
136.5
147
12
12
10
10
8
90
125
170
190
230
800
1000
1150
1250
1500
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
76
83.6
91.2
98.8
106
1.5
1.4
1.3
1.2
1.2
2.5
2.5
2.5
2.5
2.5
47.5
43
39.5
36.6
34
1N5383B, G
1N5384B, G
1N5385B, G
1N5386B, G
1N5387B, G
1N5383B
1N5384B
1N5385B
1N5386B
1N5387B
142.5
152
161.5
171
180.5
150
160
170
180
190
157.5
168
178.5
189
199.5
8
8
8
5
5
330
350
380
430
450
1500
1650
1750
1750
1850
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
114
122
129
137
144
1.1
1.1
1.0
1.0
0.9
3.0
3.0
3.0
4.0
5.0
31.6
29.4
28
26.4
25
1N5388B, G
1N5388B
190
200
210
5
480
1850
1
0.5
152
0.9
5.0
23.6
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
6. TOLERANCE AND TYPE NUMBER DESIGNATION
The JEDEC type numbers shown indicate a tolerance of ±5%.
7. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK)
Test conditions for zener voltage and impedance are as follows: IZ is applied 40 ±10 ms prior to reading. Mounting contacts are located 3/8″
to 1/2″ from the inside edge of mounting clips to the body of the diode (TA = 25°C +8°C, −2°C).
8. SURGE CURRENT (IR)
Surge current is specified as the maximum allowable peak, non−recurrent square−wave current with a pulse width, PW, of 8.3 ms. The data
given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting
the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located
as specified in Note 7 (TA = 25°C +8°C, −2°C).
9. VOLTAGE REGULATION (DVZ)
The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50% of the IZ max value listed in the
electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting contact located as specified
in Note 7 (TA = 25°C +8°C, −2°C).
10. MAXIMUM REGULATOR CURRENT (IZM)
The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the B−suffix device. The actual
IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device. TL = 75°C at 3/8″ maximum from the device
body.
†The “G’’ suffix indicates Pb−Free package available.
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4
(
θ JL, JUNCTION-TO-LEAD THERMAL RESISTANCE °C/W)
1N5333B Series
40
30
20
L
10
0
L
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
0
0.2
0.4
0.6
0.8
L, LEAD LENGTH TO HEATSINK (INCH)
1
Figure 1. Typical Thermal Resistance
300
200
10
θVZ , TEMPERATURE COEFFICIENT
(mV/°C) @ I ZT
θVZ , TEMPERATURE COEFFICIENT
(mV/°C) @ I ZT
TEMPERATURE COEFFICIENTS
8
100
6
4
2
RANGE
0
−2
3
4
7
5
6
8
VZ, ZENER VOLTAGE @ IZT (VOLTS)
9
RANGE
50
30
20
10
5
0
10
Figure 2. Temperature Coefficient-Range
for Units 3 to 10 Volts
20
40
60 80 100 120 140 160 180
VZ, ZENER VOLTAGE @ IZT (VOLTS)
200 220
Figure 3. Temperature Coefficient-Range
for Units 10 to 220 Volts
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5
θ JL (t, D), TRANSIENT THERMAL RESISTANC
JUNCTION-TO-LEAD (°C/W)
1N5333B Series
20
10
D = 0.5
5
D = 0.2
2
1
0.5
PPK
t1
D = 0.1
t2
D = 0.05
D = 0.01
DUTY CYCLE, D = t1/t2
SINGLE PULSE D TJL = qJL(t)PPK
REPETITIVE PULSES D TJL = qJL(t, D)PPK
NOTE: BELOW 0.1 SECOND, THERMAL
NOTE: RESPONSE CURVE IS APPLICABLE
NOTE: TO ANY LEAD LENGTH (L).
D=0
0.2
0.00
1
0.00
5
0.01
0.05
0.1
0.5
1
5
10
20
50
100
t, TIME (SECONDS)
Figure 4. Typical Thermal Response
L, Lead Length = 3/8 Inch
20
I r , PEAK SURGE CURRENT (AMPS)
I r , PEAK SURGE CURRENT (AMPS)
40
PW=1ms*
10
PW=8.3ms*
4
2
1
0.4
*SQUARE WAVE
PW=100ms*
0.2
0.1
PW=1000ms*
3
4
6
8 10
20
30
40
60 80 100
30
20
10
5
2
1
0.5
VZ=200V
PLOTTED FROM INFORMATION
GIVEN IN FIGURE 5
0.2
0.1
200
VZ=3.3V
1
10
NOMINAL VZ (V)
Figure 5. Maximum Non-Repetitive Surge Current
versus Nominal Zener Voltage
(See Note 3)
100
PW, PULSE WIDTH (ms)
1000
Figure 6. Peak Surge Current versus Pulse Width
(See Note 3)
1000
T=25°C
T=25°C
TC=25°C
I Z , ZENER CURRENT (mA)
I Z , ZENER CURRENT (mA)
1000
100
10
1
0.1
1
2
3
4
5
6
7
8
VZ, ZENER VOLTAGE (VOLTS)
9
100
10
1
0.1
10
10
20
30
40
50
60
VZ, ZENER VOLTAGE (VOLTS)
70
Figure 8. Zener Voltage versus Zener Current
VZ = 11 thru 75 Volts
Figure 7. Zener Voltage versus Zener Current
VZ = 3.3 thru 10 Volts
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6
80
1N5333B Series
I Z , ZENER CURRENT (mA)
100
10
1
0.1
80
100
120
140
160
180
VZ, ZENER VOLTAGE (VOLTS)
200
220
Figure 9. Zener Voltage versus Zener Current
VZ = 82 thru 200 Volts
APPLICATION NOTE
Since the actual voltage available from a given Zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ (DTJ) may be estimated.
Changes in voltage, VZ, can then be found from:
DV = qVZ DTJ
qVZ, the Zener voltage temperature coefficient, is found
from Figures 2 and 3.
Under high power-pulse operation, the Zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 4 should not be used to compute surge
capability. Surge limitations are given in Figure 5. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 5 be exceeded.
TL = qLA PD + TA
qLA is the lead-to-ambient thermal resistance and PD is the
power dissipation.
Junction Temperature, TJ, may be found from:
TJ = TL + DTJL
DTJL is the increase in junction temperature above the lead
temperature and may be found from Figure 4 for a train of
power pulses or from Figure 1 for dc power.
DTJL = qJL PD
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7
1N5333B Series
PACKAGE DIMENSIONS
SURMETIC 40, AXIAL LEAD
CASE 017AA−01
ISSUE O
NOTES:
1. CONTROLLING DIMENSION: INCH
2. LEAD DIAMETER AND FINISH NOT CONTROLLED
WITHIN DIMENSION F.
3. CATHODE BAND INDICATES POLARITY
B
DIM
A
B
D
F
K
D
K
F
INCHES
MIN
MAX
0.330
0.350
0.130
0.145
0.037
0.043
−−− 0.050
1.000
1.250
MILLIMETERS
MIN
MAX
8.38
8.89
3.30
3.68
0.94
1.09
−−−
1.27
25.40
31.75
A
F
K
SURMETIC is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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