IXYS IXTA1R4N120P N-channel enhancement mode Datasheet

IXTY1R4N120P
IXTA1R4N120P
IXTP1R4N120P
PolarTM
Power MOSFETs
VDSS
ID25
RDS(on)
= 1200V
= 1.4A
Ω
≤ 13Ω
TO-252 (IXTY)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
G
S
D (Tab)
TO-263 AA (IXTA)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1200
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1200
V
VGSS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
1.4
3.0
A
A
IA
TC = 25°C
1.4
A
EAS
TC = 25°C
150
mJ
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
10
V/ns
PD
TC = 25°C
86
W
-55 ... +150
°C
TJ
TJM
150
°C
Tstg
-55 ... +150
°C
300
260
°C
°C
1.13 / 10
Nm/lb.in.
0.35
2.50
3.00
g
g
g
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Md
Mounting Torque (TO-220)
Weight
TO-252
TO-263
TO-220
G
S
D (Tab)
TO-220AB (IXTP)
G
DS
G = Gate
S = Source
D (Tab)
D
= Drain
Tab = Drain
Features
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
1200
VGS(th)
VDS = VGS, ID = 100μA
2.5
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
V
4.5
V
±50
nA
5 μA
300 μA
TJ = 125°C
RDS(on)
High Power Density
Easy to Mount
Space Savings
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
© 2012 IXYS CORPORATION, All Rights Reserved
10.5
13
Ω
Applications
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
Discharge Circiuts in Lasers, Spark
Igniters, RF Generators
High Voltage Pulse Power
Applications
DS99871B(06/12)
IXTY1R4N120P IXTA1R4N120P
IXTP1R4N120P
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Characteristic Values
Min. Typ.
Max.
VDS = 20V, ID = 0.5 • ID25, Note 1
0.8
1.3
S
666
pF
36
pF
7.6
pF
25
ns
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
27
ns
78
ns
RG = 25Ω (External)
29
ns
24.8
nC
4.4
nC
12.8
nC
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
1.45 °C/W
RthJC
RthCS
TO-252 AA Outline
TO-220
0.50
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
IS
VGS = 0V
1.4
A
ISM
Repetitive, Pulse Width Limited by TJM
4.2
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
IF = 1.4A, VGS = 0V,-di/dt = 100A/μs
VR = 100V
900
ns
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim.
Millimeter
Min. Max.
Inches
Min.
Max.
A
A1
2.19
0.89
2.38
1.14
0.086
0.035
0.094
0.045
A2
b
0
0.64
0.13
0.89
0
0.025
0.005
0.035
b1
b2
0.76
5.21
1.14
5.46
0.030
0.205
0.045
0.215
c
c1
0.46
0.46
0.58
0.58
0.018
0.018
0.023
0.023
D
D1
5.97
4.32
6.22
5.21
0.235
0.170
0.245
0.205
E
E1
6.35
4.32
6.73
5.21
0.250
0.170
0.265
0.205
e
e1
2.28 BSC
4.57 BSC
H
L
9.40 10.42
0.51 1.02
0.370
0.020
0.410
0.040
L1
L2
L3
0.64
0.89
2.54
0.025
0.035
0.100
0.040
0.050
0.115
1.02
1.27
2.92
0.090 BSC
0.180 BSC
TO-220 Outline
Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. On through-hole package, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
TO-263 Outline
1.
2.
3.
4.
Gate
Drain
Source
Drain
Bottom Side
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100
.575
.090
.040
.050
0
.320
BSC
.625
.110
.055
.070
.005
Pins:
1 - Gate
3 - Source
2 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTY1R4N120P IXTA1R4N120P
IXTP1R4N120P
Fig. 2. Output Characteristics @ T J = 125ºC
Fig. 1. Output Characteristics @ T J = 25ºC
1.4
2.2
VGS = 10V
7V
2
VGS = 10V
6V
1.2
1.8
1
6V
1.4
ID - Amperes
ID - Amperes
1.6
1.2
1
0.8
5V
0.6
0.8
0.4
0.6
0.4
0.2
6V
0.2
0
0
0
5
10
15
20
25
30
0
5
10
15
VDS - Volts
20
25
30
35
40
VDS - Volts
Fig. 3. RDS(on) Normalized to ID = 0.7A Value vs.
Junction Temperature
Fig. 4. RDS(on) Normalized to ID = 0.7A Value vs.
Drain Current
3.2
2.6
2.4
VGS = 10V
2.8
VGS = 10V
TJ = 125ºC
R DS(on) - Normalized
R DS(on) - Normalized
2.2
2.4
I D = 1.4A
2.0
1.6
I D = 0.7A
2.0
1.8
1.6
1.4
TJ = 25ºC
1.2
1.2
0.8
1.0
0.8
0.4
-50
-25
0
25
50
75
100
125
0
150
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
ID - Amperes
TJ - Degrees Centigrade
Fig. 5. Maximum Drain Current vs.
Case Temperature
Fig. 6. Input Admittance
2
1.6
1.4
1.5
ID - Amperes
ID - Amperes
1.2
1.0
0.8
0.6
0.4
1
TJ = 125ºC
25ºC
- 40ºC
0.5
0.2
0.0
0
-50
-25
0
25
50
75
TC - Degrees Centigrade
© 2012 IXYS CORPORATION, All Rights Reserved
100
125
150
3.0
3.5
4.0
4.5
5.0
VGS - Volts
5.5
6.0
6.5
IXTY1R4N120P IXTA1R4N120P
IXTP1R4N120P
Fig. 8. Forward Voltage Drop of Intrinsic Diode
Fig. 7. Transconductance
2.8
3.5
TJ = - 40ºC
2.4
3
2.5
IS - Amperes
g f s - Siemens
2
25ºC
1.6
125ºC
1.2
2
1.5
TJ = 125ºC
0.8
1
TJ = 25ºC
0.4
0.5
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0.4
0.45
0.5
0.55
0.6
ID - Amperes
Fig. 9. Gate Charge
0.7
0.75
0.8
0.85
0.9
Fig. 10. Capacitance
10
10,000
VDS = 600V
9
f = 1 MHz
Capacitance - PicoFarads
I D = 0.7A
8
I G = 10mA
7
VGS - Volts
0.65
VSD - Volts
6
5
4
3
Ciss
1,000
100
Coss
10
2
Crss
1
1
0
0
4
8
12
16
20
0
24
5
10
QG - NanoCoulombs
15
20
25
30
35
40
VDS - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
10
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXT_1R4N120P (2C) 4-01-08-A
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