ON BSS123LT1 Power mosfet 170 mamps, 100 volt Datasheet

BSS123LT1
Preferred Device
Power MOSFET
170 mAmps, 100 Volts
N−Channel SOT−23
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Features
• Pb−Free Packages are Available
170 mAMPS
100 VOLTS
RDS(on) = 6 N−Channel
3
MAXIMUM RATINGS
Symbol
Value
Unit
Drain−Source Voltage
VDSS
100
Vdc
Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 s)
VGS
VGSM
± 20
± 40
Vdc
Vpk
ID
0.17
0.68
Drain Current
− Continuous (Note 1)
− Pulsed (Note 2)
1
Adc
IDM
2
MARKING
DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 3) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
3
1
Symbol
Max
Unit
PD
225
1.8
mW
mW/°C
RJA
556
°C/W
TJ, Tstg
−55 to +150
°C
SOT−23
CASE 318
STYLE 21
SA
M
Rating
2
SA
M
= Device Code
= Date Code
PIN ASSIGNMENT
Drain
3
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width 300 s, Duty Cycle 2.0%.
3. FR−5 = 1.0 0.75 0.062 in.
1
Gate
2
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 5
1
Publication Order Number:
BSS123LT1/D
BSS123LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
100
−
−
Vdc
−
−
−
−
15
60
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0, ID = 250 Adc)
Adc
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 100 Vdc)
TJ = 25°C
TJ = 125°C
IDSS
Gate−Body Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
−
−
50
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.8
−
2.8
Vdc
Static Drain−Source On−Resistance
(VGS = 10 Vdc, ID = 100 mAdc)
rDS(on)
−
5.0
6.0
gfs
80
−
−
mmhos
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
−
20
−
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
−
9.0
−
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
−
4.0
−
pF
td(on)
−
20
−
ns
td(off)
−
40
−
ns
VSD
−
−
1.3
V
ON CHARACTERISTICS (Note 4)
Forward Transconductance
(VDS = 25 Vdc, ID = 100 mAdc)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS(4)
Turn−On Delay Time
(VCC = 30 Vdc, IC = 0.28 Adc,
VGS = 10 Vdc, RGS = 50 )
Turn−Off Delay Time
REVERSE DIODE
Diode Forward On−Voltage
(ID = 0.34 Adc, VGS = 0 Vdc)
4. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
ORDERING INFORMATION
Package
Shipping†
SOT−23
3,000 Tape & Reel
SOT−23
(Pb−Free)
3,000 Tape & Reel
SOT−23
10,000 Tape & Reel
SOT−23
(Pb−Free)
10,000 Tape & Reel
Device
BSS123LT1
BSS123LT1G
BSS123LT3
BSS123LT3G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
BSS123LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
1.0
VDS = 10 V
TA = 25°C
1.6
VGS = 10 V
1.4
9V
1.2
8V
1.0
7V
0.8
6V
0.6
0.4
5V
0.2
4V
3V
0
I D, DRAIN CURRENT (AMPS)
I D, DRAIN CURRENT (AMPS)
1.8
0
1.0
2.0 3.0 4.0
5.0
6.0 7.0 8.0
VDS, DRAN SOURCE VOLTAGE (VOLTS)
9.0
0.8
0.6
0.4
0.2
10
0
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
r DS(on) , STATIC DRAIN−SOURCE ON−RESISTANCE
(NORMALIZED)
2.2
VGS = 10 V
ID = 200 mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
−60
−20
+20
+60
T, TEMPERATURE (°C)
1.0
2.0 3.0 4.0
5.0
6.0 7.0 8.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
9.0
10
Figure 2. Transfer Characteristics
2.4
1.8
25°C
125°C
Figure 1. Ohmic Region
2.0
−55 °C
+100
+140
1.2
1.05
VDS = VGS
ID = 1.0 mA
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
−60
Figure 3. Temperature versus Static
Drain−Source On−Resistance
−20
+20
+60
T, TEMPERATURE (°C)
+100
Figure 4. Temperature versus Gate
Threshold Voltage
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3
+140
BSS123LT1
PACKAGE DIMENSIONS
SOT−23
(TO−236)
CASE 318−08
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
A
L
3
1
V
B S
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
J
K
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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For additional information, please contact your
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BSS123LT1/D
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