IXYS IXGN60N60C2 Hiperfasttm igbts with diode Datasheet

IXGN60N60C2
IXGN60N60C2D1
HiPerFASTTM IGBTs
with Diode
VCES =
IC110 =
VCE(sat) ≤
trr
=
C2-Class High Speed IGBTs
E
E
60C2
60C2D1
600V
60A
2.5V
35ns
SOT-227B, miniBLOC
E153432
Ec
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C, RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
G
±30
V
Ec
C
IC25
TC = 25°C (Limited by Leads)
75
A
IC110
TC = 110°C
60
A
ICM
TC = 25°C, 1 ms
300
A
SSOA
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
ICM = 100
A
(RBSOA)
Clamped Inductive Load
@ VCE ≤ 600
V
PC
TC = 25°C
480
W
-55 ... +150
°C
TJM
150
°C
z
Tstg
-55 ... +150
°C
z
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
z
30
g
z
TJ
VISOL
Md
50/60 Hz
IISOL ≤ 1 mA
t = 1 min
t=1s
Mounting Torque
Terminal Connection Torque (M4)
Weight
G = Gate, C = Collector, E = Emitter
c Either Emitter Terminal can be used as
Main or Kelvin Emitter
Features
z
z
z
z
International Standard Package
miniBLOC
Aluminium Nitride Isolation
- High Power Dissipation
Anti-Parallel Ultra Fast Diode
Isolation Voltage 3000 V~
Low VCE(sat) for Minimum On-State
Conduction Losses
MOS Gate Turn-on
- Drive Simplicity
Low Collector-to-Case Capacitance
(< 50 pF)
Low Package Inductance (< 5 nH)
- Easy to Drive and to Protect
Applications
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
VGE(th)
IC
3.0
ICES
VCE = VCES
VGE = 0V
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC
= 250μA, VCE = VGE
= 50A, VGE = 15V, Note 1
TJ = 125°C
TJ = 125°C
© 2009 IXYS CORPORATION, All Rights Reserved
2.1
1.8
z
z
z
5.0
V
650
5
μA
mA
±100
nA
2.5
V
V
z
z
AC Motor Speed Control
DC Servo and Robot Drives
DC Choppers
Uninterruptible Power Supplies (UPS)
Switch-Mode and Resonant-Mode
Power Supplies
Advantages
z
Easy to Mount with 2 Screws
z
Space Savings
z
High Power Density
DS99177A(01/09)
IXGN60N60C2
IXGN60N60C2D1
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
IC = 50A, VCE = 10V, Note 1
40
Cies
Coes
VCE = 25V, VGE = 0V, f = 1MHz
Cres
Qg
Qge
IC = 50A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(off)
tfi
td(off)
tfi
4750
pF
530
pF
65
pF
146
nC
28
nC
50
nC
ns
25
ns
IC = 50A, VGE = 15 V
95
VCE = 400V, RG = 2Ω
150
35
0.48
td(on)
Eon
S
18
Eoff
tri
58
Inductive load, TJ = 25°C
td(on)
tri
SOT-227B miniBLOC
ns
0.80
18
Inductive load, TJ = 125°C
IC = 50A, VGE = 15V
VCE = 400V, RG = 2Ω
Eoff
ns
mJ
ns
25
ns
0.90
mJ
130
ns
80
ns
1.20
mJ
RthJC
0.26 °C/W
RthCS
0.05
°C/W
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25°C, Unless Oherwise Specified)
Characteristic Values
Min. Typ.
Max.
VF
IF = 60A, VGE = 0V, Note 1
IRM
IF = 60A, -di/dt = 100A/μs,
trr
IF = 1A, -di/dt = 200A/μs, VR = 30V,VGE = 0V
TJ = 150°C
2.1
V
V
8.3
A
1.4
TJ = 100°C
VR = 100V, VGE = 0V,
35
RthJC
ns
0.85 °C/W
Note 1: PulseTest, t ≤ 300μs, Duty Cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGN60N60C2
IXGN60N60C2D1
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25 Deg. C
@ 25 deg. C
100
200
VG E = 15V
13V
11V
90
80
VG E = 15V
13V
11V
9V
175
9V
70
7V
I C - Amperes
I C - Amperes
150
60
50
40
30
125
100
7V
75
50
20
5V
25
10
5V
0
0
0.5
1
1.5
2
2.5
3
1
3.5
1.5
2
Fig. 3. Output Characteristics
3
100
4
4.5
1.2
VG E = 15V
13V
11V
80
9V
1.1
70
VC E (sat) - Normalized
90
7V
60
50
40
30
5V
VG E = 15V
I C = 100A
1
0.9
I C = 50A
0.8
0.7
I C = 25A
20
0.6
10
0
0.5
0.5
1
1.5
2
2.5
3
3.5
25
50
75
100
125
150
TJ - Degrees Centigrade
V CE - Volts
Fig. 5. Collector-to-Emitter Voltage
Fig. 6. Input Admittance
vs. Gate-to-Emitter voltage
5
200
T J = 25º C
4.5
175
150
I C - Amperes
4
VCE - Volts
3.5
Fig. 4. T emperature Dependence of V CE(sat)
@ 125 Deg. C
I C - Amperes
2.5
V CE - Volts
V CE - Volts
3.5
3
2.5
I C = 100A
2
100
75
T J = 125º C
50
50A
1.5
125
25º C
-40º C
25
25A
1
0
5
6
7
8
9
10
11
12
13
V GE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
14
15
3.5
4
4.5
5
5.5
6
6.5
V GE - Volts
7
7.5
8
8.5
IXGN60N60C2
IXGN60N60C2D1
Fig. 7. T ransconductance
Fig. 8. Dependence of Eoff on RG
100
6
TJ = 125º C
VGE = 15V
VCE = 400V
90
T J = -40º C
25º C
125º C
70
Eoff - milliJoules
g f s - Siemens
80
5
60
50
40
30
I C = 100A
4
I C = 75A
3
I C = 50A
2
20
I C = 25A
1
10
0
0
0
25
50
75
100
125
150
175
2
200
4
10
12
14
Fig. 9. Dependence of Eoff on I C
Fig. 10. Dependence of Eoff on T emperature
16
5
R G = 2 Ohms
R G = 10 Ohms - - - - -
R G = 2 Ohms
R G= 10 Ohms - - - - 4
VG E = 15V
VC E = 400V
Eoff - milliJoules
4
Eoff - MilliJoules
8
R G - Ohms
5
T J = 125 ºC
3
2
T J = 25 ºC
2
I C = 50A
0
0
40
50
60
70
80
90
VG E = 15V
VC E = 400V
I C = 75A
1
30
I C = 100A
3
1
20
100
I C = 25A
25
50
I C - Amperes
75
100
125
TJ - Degrees Centigrade
Fig. 11. Gate Charge
Fig. 12. Capacitance
Fig. 12. Capacitance
10,000
10000
15
f = 1M Hz
VC E = 300V
I C = 50A
I G = 10mA
Cies
Capacitance
- pF
Capacitance
- PicoFarads
12
VG E - Volts
6
I C - Amperes
9
6
C ies
1,000
1000
Coes C oes
100
100
3
Cres
C res
f = 1 MHz
0
10
10
0
20
40
60
80
100
120
140
160
Q G - nanoCoulombs
00
55
10
10
15
15
20
25
20
25
V
Volts
V CE- Volts
30
30
35
35
4040
CE
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS REF: G_60N60C2(7Y)12-11-08-A
IXGN60N60C2
IXGN60N60C2D1
160
A
140
IF
4000
80
TVJ= 100°C
VR = 300V
nC
120
3000
60
TVJ= 150°C
100°C
25°C
80
IF= 120A, 60A, 30A
IRM
Qr
100
TVJ= 100°C
VR = 300V
A
IF= 120A, 60A, 30A
2000
40
60
40
1000
20
20
0
0
1
2
0
100
V
A/μs 1000
-diF/dt
VF
Fig. 13. Forward Current IF Versus VF
Fig. 14. Reverse Recorvery Charge Qr
Versus -diF/dt
2.0
140
200
400
1.6
TVJ= 100°C
IF = 60A
1.2
VFR
IF= 30A, 60A, 120A
110
IRM
μs
trr
120
1.0
600 A/μs
800 1000
-diF/dt
Fig. 15. Peak Reverse Current IRM
Versus -diF/dt
V
V FR
15
trr
Kf
0
20
TVJ= 100°C
VR = 300V
ns
130
1.5
0
10
0.8
5
0.4
100
0.5
QRM
0.0
0
40
90
80
120 °C 160
80
0
200
400
T VJ
600
800
A/μs
1000
0
0
200
400
-diF/dt
Fig. 16. Dynamic Paraments Qr, IRM
Versus TvJ
0.0
600 A/μs
800 1000
diF/dt
Fig. 18. Peak Forward Voltage VRM
and trr Versus -diF/dt
Fig. 17. Recorvery Time trr Versus
-diF/dt
1
1.000
K/W
Z(th)JC [ ºC / W ]
0.1
Z thJC
0.100
0.01
0.010
0.001
0.0001
0.00001
0.001
0.0001
DSEP 2x61-06A
0.0001
0.001
0.01
0.001
0.1
0.01
t
s
1
0.1
Fig. 27. Maximum Transient Thermal Impeadance Juection
to Case
Pulse
Width [(for
s ] Diode)
Fig. 27. Maximum Transient Thermal Impedance (for diode)
© 2009 IXYS CORPORATION, All Rights Reserved
1
10
tfr
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