IDT IDT74FCT827ATLB Fast cmos 10-bit buffer Datasheet

IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
IDT54/74FCT827AT/BT/CT/DT
IDT54/74FCT2827AT/BT/CT
FAST CMOS 10-BIT
BUFFERS
Integrated Device Technology, Inc.
FEATURES:
DESCRIPTION:
• Common features:
– Low input and output leakage ≤1µA (max.)
– CMOS power levels
– True TTL input and output compatibility
– VOH = 3.3V (typ.)
– VOL = 0.3V (typ.)
– Meets or exceeds JEDEC standard 18 specifications
– Product available in Radiation Tolerant and Radiation
Enhanced versions
– Military product compliant to MIL-STD-883, Class B
and DESC listed (dual marked)
– Available in DIP, SOIC, SSOP, QSOP, CERPACK
and LCC packages
• Features for FCT827T:
– A, B, C and D speed grades
– High drive outputs (-15mA IOH, 48mA IOL)
• Features for FCT2827T:
– A, B and C speed grades
– Resistor outputs (-15mA IOH, 12mA IOL Com.)
(-12mA IOH, 12mA IOL Mil.)
– Reduced system switching noise
The FCT827T is built using an advanced dual metal CMOS
technology.
The FCT827T/FCT2827T 10-bit bus drivers provide highperformance bus interface buffering for wide data/address
paths or buses carrying parity. The 10-bit buffers have NANDed output enables for maximum control flexibility.
All of the FCT827T high-performance interface family are
designed for high-capacitance load drive capability, while
providing low-capacitance bus loading at both inputs and
outputs. All inputs have clamp diodes to ground and all outputs
are designed for low-capacitance bus loading in high-impedance state.
The FCT2827T has balanced output drive with current
limiting resistors. This offers low ground bounce, minimal
undershoot and controlled output fall times-reducing the need
for external series terminating resistors. FCT2827T parts are
plug-in replacements for FCT827T parts.
FUNCTIONAL BLOCK DIAGRAM
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
OE1 OE2
2573 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
1995 Integrated Device Technology, Inc.
6.22
6.22
AUGUST 1995
DSC-4217/5
1
1
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
INDEX
1
2
3 P24-1
4 D24-1
5 SO24-2
6 SO24-7
7 SO24-8
&
8
9 E24-1
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
VCC
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
OE2
D2
D3
D4
NC
D5
D6
D7
4 3 2
1 28 27 26
25
5
24
6
23
7
8
22
L28-1
9
21
20
10
19
11
1213 14 15 16 17 18
Y2
Y3
Y4
NC
Y5
Y6
Y7
D8
D9
GND
NC
OE2
Y9
Y8
OE1
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
GND
D1
D0
OE1
NC
VCC
Y0
Y1
PIN CONFIGURATIONS
2573 drw 02
2573 drw 03
DIP/SOIC/SSOP/QSOP/CERPACK
TOP VIEW
LCC
TOP VIEW
FUNCTION TABLE(1)
PIN DESCRIPTION
Names
I/O
DI
I
Description
When both are LOW the outputs are
enabled. When either one or both are
HIGH the outputs are High Z.
10-bit data input.
OEI
I
YI
O
10-bit data output.
Inputs
2573 tbl 01
ABSOLUTE MAXIMUM RATINGS(1)
Military
–0.5 to +7.0
Unit
V
–0.5 to
VCC +0.5
V
–55 to +125
°C
–65 to +135
°C
–65 to +150
°C
0.5
W
I OUT
–60 to +120
mA
–60 to +120
OE1
OE2
DI
YI
Function
L
L
H
X
L
L
X
H
L
H
X
X
L
H
Z
Z
Transparent
Three-State
NOTE:
1. H = HIGH, L = LOW, X = Don’t Care, Z = High Impedance
2573 tbl 02
CAPACITANCE (TA = +25°C, f = 1.0MHz)
Symbol
Rating
Commercial
VTERM(2) Terminal Voltage
–0.5 to +7.0
with Respect to
GND
VTERM(3) Terminal Voltage
–0.5 to
with Respect to
VCC +0.5
GND
TA
Operating
0 to +70
Temperature
TBIAS
Temperature
–55 to +125
Under Bias
TSTG
Storage
–55 to +125
Temperature
PT
Power Dissipation
0.5
DC Output
Current
Output
Symbol
Parameter(1)
CIN
Input
Capacitance
COUT
Output
Capacitance
Conditions
VIN = 0V
Typ.
6
VOUT = 0V
8
Max. Unit
10
pF
12
NOTE:
1. This parameter is measured at characterization but not tested.
pF
2573 lnk 04
2573 lnk 03
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability. No terminal voltage may exceed
VCC by +0.5V unless otherwise noted.
2. Input and VCC terminals only.
3. Outputs and I/O terminals only.
6.22
2
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10%
Symbol
VIH
VIL
Parameter
Input HIGH Level
Test Conditions(1)
Guaranteed Logic HIGH Level
Input LOW Level
Current(4)
II H
Input HIGH
II L
Input LOW Current (4)
I OZH
High Impedance Output Current
I OZL
(3-State Output
Min.
2.0
Typ.(2)
—
Max.
—
Unit
V
Guaranteed Logic LOW Level
—
—
0.8
V
VCC = Max.
VI = 2.7V
—
—
±1
µA
VI = 0.5V
—
—
±1
VO = 2.7V
—
—
±1
VO = 0.5V
—
—
±1
VCC = Max.
pins) (4)
Current(4)
II
Input HIGH
VIK
Clamp Diode Voltage
VH
Input Hysteresis
I CC
Quiescent Power Supply Current
µA
VCC = Max., VI = VCC (Max.)
—
—
±1
µA
VCC = Min., IIN = –18mA
—
–0.7
–1.2
V
—
—
200
—
mV
—
0.01
1
VCC = Max., VIN = GND or VCC
mA
2573 lnk 05
OUTPUT DRIVE CHARACTERISTICS FOR FCT827T
Symbol
VOH
Parameter
Output HIGH Voltage
VOL
Output LOW Voltage
I OS
Short Circuit Current
Test Conditions(1)
VCC = Min.
I OH = –6mA MIL.
VIN = VIH or V IL
I OH = –8mA COM'L.
I OH = –12mA MIL.
I OH = –15mA COM'L.
VCC = Min.
I OL = 32mA MIL.
VIN = VIH or V IL
I OL = 48mA COM'L.
VCC = Max., VO = GND (3)
Min.
2.4
Typ.(2)
3.3
Max.
—
Unit
V
2.0
3.0
—
V
—
0.3
0.5
V
–60
–120
–225
mA
2573 lnk 06
OUTPUT DRIVE CHARACTERISTICS FOR FCT2827T
Symbol
I ODL
Parameter
Output LOW Current
Test Conditions(1)
VCC = 5V, VIN = VIH or VIL, VOUT = 1.5V (3)
Min.
16
Typ.(2)
48
Max.
—
Unit
mA
I ODH
Output HIGH Current
VCC = 5V, VIN = VIH or V IL, VOUT = 1.5V (3)
–16
–48
—
mA
VOH
Output HIGH Voltage
2.4
3.3
—
V
VOL
Output LOW Voltage
VCC = Min.
VIN = VIH or VIL
VCC = Min.
VIN = VIH or V IL
—
0.3
0.50
V
I OH = –12mA MIL.
I OH = –15mA COM'L.
I OL = 12mA
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. The test limit for this parameter is ±5µA at TA = –55°C.
6.22
2573 lnk 07
3
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
Symbol
∆ICC
ICCD
IC
Parameter
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply Current (4)
Total Power Supply Current (6)
Test Conditions(1)
VCC = Max.
VIN = 3.4V(3)
VCC = Max.
Outputs Open
OE1 = OE2 = GND
One Input Toggling
50% Duty Cycle
VCC = Max.
Min.
—
Typ.(2)
0.5
Max.
2.0
Unit
mA
VIN = VCC FCT827T
VIN = GND
FCT2827T
—
0.15
0.25
mA/
MHz
—
0.06
0.12
VIN = VCC
—
1.5
3.5
FCT827T
Outputs Open
fi = 10MHz
50% Duty Cycle
VIN = GND FCT2827T
—
0.6
2.2
VIN = 3.4V
—
1.8
4.5
OE1 = OE2 = GND
VIN = GND FCT2827T
—
0.9
3.2
One Bit Toggling
VCC = Max.
VIN = VCC
—
3.0
6.0 (5)
FCT827T
FCT827T
Outputs Open
fi = 2.5MHz
50% Duty Cycle
VIN = GND FCT2827T
—
1.2
3.4 (5)
VIN = 3.4V
—
5.0
14.0 (5)
OE1 = OE2 = GND
VIN = GND FCT2827T
—
3.2
11.4 (5)
FCT827T
mA
Eight Bits Toggling
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 5.0V, +25°C ambient.
3. Per TTL driven input (VIN = 3.4V). All other inputs at VCC or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested.
6. IC = IQUIESCENT + IINPUTS + IDYNAMIC
IC = ICC + ∆ICC DHNT + ICCD (fCP/2 + fiNi)
ICC = Quiescent Current
∆ICC = Power Supply Current for a TTL High Input (VIN = 3.4V)
DH = Duty Cycle for TTL Inputs High
NT = Number of TTL Inputs at DH
ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
fCP = Clock Frequency for Register Devices (Zero for Non-Register Devices)
fi = Input Frequency
Ni = Number of Inputs at fi
All currents are in milliamps and all frequencies are in megahertz.
6.22
2573 tbl 08
4
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
FCT827AT/FCT2827AT
Com'l.
Symbol
tPLH
tPHL
tPZH
tPZL
tPHZ
tPLZ
Parameter
Propagation Delay
DI to YI
Output Enable Time
OEI to YI
Output Disable Time
OEI to YI
FCT827BT/FCT2827BT
Mil.
Com'l.
Mil.
Condition(1)
Min.(2)
Max.
Min.(2)
Max.
Min.(2)
Max.
Min.(2)
Max.
Unit
CL = 50pF
RL = 500Ω
CL = 300pF(3)
RL = 500Ω
CL = 50pF
RL = 500Ω
CL = 300pF(3)
RL = 500Ω
CL = 5pF(3)
RL = 500Ω
CL = 50pF
RL = 500Ω
1.5
8.0
1.5
9.0
1.5
5.0
1.5
6.5
ns
1.5
15.0
1.5
17.0
1.5
13.0
1.5
14.0
1.5
12.0
1.5
13.0
1.5
8.0
1.5
9.0
1.5
23.0
1.5
25.0
1.5
15.0
1.5
16.0
1.5
9.0
1.5
9.0
1.5
6.0
1.5
7.0
1.5
10.0
1.5
10.0
1.5
7.0
1.5
8.0
ns
ns
2573 tbl 09
FCT827CT/FCT2827CT
Com'l.
Symbol
tPLH
tPHL
tPZH
tPZL
tPHZ
tPLZ
Parameter
Propagation Delay
DI to YI
Output Enable Time
OEI to YI
Output Disable Time
OEI to YI
FCT827DT
Mil.
Com'l.
Mil.
Condition(1)
Min.(2)
Max.
Min.(2)
Max.
Min.(2)
Max.
Min.(2)
Max.
Unit
CL = 50pF
RL = 500Ω
CL = 300pF(3)
RL = 500Ω
CL = 50pF
RL = 500Ω
CL = 300pF(3)
RL = 500Ω
CL = 5pF(3)
RL = 500Ω
CL = 50pF
RL = 500Ω
1.5
4.4
1.5
5.0
1.5
3.8
—
—
ns
1.5
10.0
1.5
11.0
1.5
7.5
—
—
1.5
7.0
1.5
8.0
1.5
5.0
—
—
1.5
14.0
1.5
15.0
1.5
9.0
—
—
1.5
5.7
1.5
6.7
1.5
4.3
—
—
1.5
6.0
1.5
7.0
1.5
4.3
—
—
NOTES:
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. These conditions are guaranteed but not tested.
ns
ns
2573 tbl 10
6.22
5
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TEST CIRCUITS AND WAVEFORMS
SWITCH POSITION
TEST CIRCUITS FOR ALL OUTPUTS
V CC
7.0V
Closed
Open
2573 lnk 11
DEFINITIONS:
CL= Load capacitance: includes jig and probe capacitance.
RT = Termination resistance: should be equal to ZOUT of the Pulse
Generator.
D.U.T.
50pF
RT
Open Drain
Disable Low
All Other Tests
V OUT
Pulse
Generator
Switch
Enable Low
500Ω
VIN
Test
500Ω
CL
2573 drw 04
SET-UP, HOLD AND RELEASE TIMES
DATA
INPUT
TIMING
INPUT
ASYNCHRONOUS CONTROL
PRESET
CLEAR
ETC.
SYNCHRONOUS CONTROL
PRESET
CLEAR
CLOCK ENABLE
ETC.
tH
tSU
tREM
tSU
PULSE WIDTH
3V
1.5V
0V
3V
1.5V
0V
LOW-HIGH-LOW
PULSE
1.5V
tW
3V
1.5V
0V
HIGH-LOW-HIGH
PULSE
1.5V
2573 drw 06
3V
1.5V
0V
tH
2573 drw 05
PROPAGATION DELAY
ENABLE AND DISABLE TIMES
ENABLE
SAME PHASE
INPUT TRANSITION
tPLH
tPHL
OUTPUT
tPLH
OPPOSITE PHASE
INPUT TRANSITION
tPHL
3V
1.5V
0V
VOH
1.5V
VOL
DISABLE
3V
CONTROL
INPUT
1.5V
OUTPUT
NORMALLY
LOW
3V
1.5V
0V
SWITCH
CLOSED
3.5V
1.5V
tPZH
OUTPUT
NORMALLY
HIGH
2573 drw 07
SWITCH
OPEN
0V
tPLZ
tPZL
3.5V
0.3V
VOL
tPHZ
0.3V
VOH
1.5V
0V
0V
2573 drw 08
NOTES:
1. Diagram shown for input Control Enable-LOW and input Control DisableHIGH
2. Pulse Generator for All Pulses: Rate ≤ 1.0MHz; tF ≤ 2.5ns; tR ≤ 2.5ns
6.22
6
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ORDERING INFORMATION
IDT
XX
Temp. Range
FCT
X
Family
XX
Device Type
X
Package
X
Process
Blank
B
Commercial
MIL-STD-883, Class B
P
D
E
L
SO
PY
Q
Plastic DIP
CERDIP
CERPACK
Leadless Chip Carrier
Small Outline IC
Shrink Small Outline Package
Quarter-size Small Outline Package
827AT
827BT
827CT
827DT
Non-Inverting 10-Bit Buffer
Blank
2
High Drive
Balanced Drive
54
74
–55°C to +125°C
0°C to +70°C
2573 drw 09
6.22
7
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