IXYS IXGT16N170 High voltage igbt Datasheet

IXGH 16N170
IXGT 16N170
High Voltage
IGBT
VCES
IC25
VCE(sat)
= 1700
=
32
= 3.5
V
A
V
TO-268 (D3-Pak) (IXGT)
Symbol
Test Conditions
VCES
TJ = 25°C to 150°C
1700
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
32
A
IC90
TC = 90°C
16
A
ICM
TC = 25°C, 1 ms
80
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load
PC
Maximum Ratings
ICM = 40
@ 0.8 VCES
TC = 25°C
190
W
-55 ... +150
°C
150
°C
Tstg
-55 ... +150
°C
300
260
°C
°C
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
Mounting torque (M3)
Weight
TO-247 AD
TO-268
1.13/10Nm/lb.in.
6
4
E
C (TAB)
TO-247 (IXGH)
A
TJM
TJ
G
g
g
G
G = Gate,
E = Emitter,
C (TAB)
C
E
C = Collector,
TAB = Collector
Features
z
z
z
z
z
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
High current handling capability
MOS Gate turn-on
- drive simplicity
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
z
z
z
z
= 250 μA, VGE = 0 V
= 250 μA, VCE = VGE
BVCES
VGE(th)
IC
IC
ICES
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= IC90, VGE = 15 V
1700
3.0
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
© 2006 IXYS CORPORATION All rights reserved
2.7
3.3
5.0
V
V
50
500
μA
μA
±100
nA
3.5
V
V
z
z
Capacitor discharge & pulser circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
z
z
z
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98996C(07/06)
IXGH 16N170
IXGT 16N170
Symbol
Test Conditions
gfs
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
IC(ON)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
10
∅P
VGE = 10V, VCE = 10V
65
A
1650
pF
75
pF
26
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
Qg
Qge
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
Inductive load, TJ = 25°°C
tri
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 10 Ω
S
1
Cies
Coes
14
13
nC
Dim.
24
nC
45
ns
48
770
1100
ns
Eoff
9.3
14 mJ
48
ns
42
ns
1.5
mJ
Eon
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 10 Ω
430
ns
tfi
1170
ns
Eoff
11.2
mJ
td(off)
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXGT) Outline (D3-Pak)
0.65 °C/W
RthJC
RthCS
Millimeter
Min.
Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
ns
tfi
Inductive load, TJ = 125°°C
e
nC
ns
tri
3
78
600
td(on)
2
Terminals: 1 - Gate
3 - Source
400
td(off)
TO-247 (IXGH) Outline
(TO-247)
0.25
°C/W
Ref: IXYS CO 0052 RA
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
7,005,734 B2
IXGH 16N170
IXGT 16N170
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25 Deg. C
32
V G E = 1 7V
1 5V
1 3V
11V
28
24
V G E = 1 7V
140
9V
20
I C - Amperes
I C - Amperes
@ 25 deg. C
160
16
7V
12
120
15V
100
13V
80
60
8
40
4
20
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
1 1V
5
9V
7V
0
V CE - V olts
Fig. 3. Output Characteristics
@ 125 Deg. C
I C - Amperes
24
8
10
V CE - V olts
12
9V
7V
12
8
0
2.5
18
1.6
I C = 32A
1.4
I C = 1 6A
1.2
1
I C = 8A
0.8
4
1.5
16
V G E = 1 5V
16
0.5
14
1.8
20
3.5
4.5
5.5
0.6
6.5
-50
-25
V CE - V olts
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
Fig. 6. Input Admittance
vs. Gate-to-Emiiter voltage
56
10
T J = 25 º C
9
48
8
40
I C - Amperes
7
V CE - Volts
6
2
V G E = 1 7V
1 5V
1 3V
11V
28
4
Fig. 4. T emperature Dependence of V CE(sat)
V C E (sat) - Normalized
32
2
6
5
I C = 32A
4
24
T J = 1 25 º C
16
16A
3
32
25 º C
8
2
-40 º C
8A
1
0
5
6
7
8
9
10
11
12
V GE - V olts
© 2006 IXYS CORPORATION All rights reserved
13
14
15
3
4
5
6
7
V GE - V olts
8
9
10
IXGH 16N170
IXGT 16N170
Fig. 8. Dependence of Eoff on RG
Fig. 7. T ransconductance
21
24
TJ = -40 º C
25 º C
22
125 º C
20
18
E off - milliJoules
- Siemens
15
12
g
fs
9
6
= 32A
16
I
C
14
= 16A
10
0
8
0
8
16
24
32
40
48
56
0
10
20
30
40
50
60
I C - A mperes
R G - Ohms
Fig. 9. Dependence of Eoff on I C
Fig. 10. Dependence of Eoff on T emperature
31
24
TJ = 125 º C
V G E = 15V
V C E = 1360V
20
V G E = 15V
V C E = 1360V
25
R G = 50 Ohm s
18
R G = 10 Ohm s
R G = 50 Ohm s - - - - -
28
E off - milliJoules
22
16
R G = 10 Ohm s
14
22
I
C
= 32A
I
C
= 16A
19
16
13
12
10
10
7
16
18
20
22
24
26
28
30
0
32
25
50
75
100
125
150
TJ - Degrees Centigrade
I C - A mperes
Fig. 11. Gate Charge
Fig. 12. Capacitance
15
10000
f = 1M H z
V C E = 600V
I C = 1 6A
I G = 1 0m A
Capacitance - pF
12
V G E - Volts
C
T J = 125 º C
V G E = 15V
V C E = 1360V
18
12
3
E off - milliJoules
I
9
6
1000
C ies
C oes
100
3
C res
0
10
0
10
20
30
Q
40
50
60
70
80
G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
0
5
10
15
20
25
V CE - V olts
30
35
40
IXGH 16N170
IXGT 16N170
Fig. 13. Re ve rs e -Bias Safe
Ope rating Are a
45
40
I C - Amperes
35
30
25
20
15
TJ = 125 ºC
10
R G = 10Ω
5
dV/dT < 10V/ns
0
100
300
500
700
900
1100 1300 1500 1700
V C E - V olts
Fig. 14. Maximum T ransient T hermal Resistance
R (th) J C - (ºC/W)
1
0.1
0.01
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
© 2006 IXYS CORPORATION All rights reserved
1
10
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