ON MPSA29RLRP Darlington transistors npn silicon Datasheet

MPSA28, MPSA29
MPSA29 is a Preferred Device
Darlington Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
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COLLECTOR 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
MPSA28
MPSA29
VCES
80
100
Vdc
Collector −Base Voltage
MPSA28
MPSA29
VCBO
80
100
Vdc
Emitter −Base Voltage
EMITTER 1
VEBO
12
Vdc
Collector Current − Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
BASE
2
MARKING
DIAGRAM
TO−92
CASE 29−11
STYLE 1
1
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MPS
A2x
AYWW G
G
3
MPSA2x = Device Code
x = 8 or 9
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MPSA28
MPSA28G
MPSA28RLRP
MPSA28RLRPG
MPSA29
MPSA29G
MPSA29RLRP
MPSA29RLRPG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1
Package
Shipping
TO−92
5,000 Units/Box
TO−92
(Pb−Free)
5,000 Units/Box
TO−92
2,000/Ammo Pack
TO−92
(Pb−Free)
2,000/Ammo Pack
TO−92
5,000 Units/Box
TO−92
(Pb−Free)
5,000 Units/Box
TO−92
2,000/Ammo Pack
TO−92
(Pb−Free)
2,000/Ammo Pack
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MPSA28/D
MPSA28, MPSA29
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
80
100
−
−
−
−
80
100
−
−
−
−
12
−
−
−
−
−
−
100
100
−
−
−
−
500
500
−
−
100
10,000
10,000
−
−
−
−
−
−
0.7
0.8
1.2
1.5
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
V(BR)CES
MPSA28
MPSA29
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Vdc
V(BR)CBO
MPSA28
MPSA29
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
MPSA28
MPSA29
Collector Cutoff Current
(VCE = 60 Vdc, VBE = 0)
(VCE = 80 Vdc, VBE = 0)
MPSA28
MPSA29
Vdc
ICBO
nAdc
ICES
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
Vdc
nAdc
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
−
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.01 mAdc)
(IC = 100 mAdc, IB = 0.1 mAdc)
VCE(sat)
Base −Emitter On Voltage
(IC = 100 mAdc, VCE = 5.0 Vdc)
VBE(on)
−
1.4
2.0
Vdc
fT
125
200
−
MHz
Cobo
−
5.0
8.0
pF
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT = hfe S ftest.
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2
MPSA28, MPSA29
200
1.8
TA = 125°C
100
50
TA = 25°C
20
TA = −55°C
V, VOLTAGE (VOLTS)
h FE , DC CURRENT GAIN (k)
VCE = 5.0 V
10
5.0
2.0
5.0
10
20
100
50
200
1.0
VCE(S) @ IC/IB = 1.0 k
1.0
2.0
5.0
10
20
100
50
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
Figure 2. “ON” Voltages
500
1k
2.4
25°C to 125°C
−1.0
qVC for VCE(S)
−55°C to 25°C
−2.0
−3.0
25°C to 125°C
−55°C to 25°C
−4.0
qVB for VBE
−5.0
1.0
2.0
5.0
10
20
100
50
200
TA = 25°C
2.0
IC = 500 mA
1.6
1.2
IC = 100 mA
IC = 10 mA
IC = 250 mA
0.8
0.4
500
1.0 2.0
0.2
10
20
100 200
1 k 1.5 k
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 3. Temperature Coefficients
Figure 4. Collector Saturation Region
10
500
1.0 ms
h fe , HIGH FREQUENCY CURRENT GAIN
1k
I C , COLLECTOR CURRENT (mA)
VBE(ON) @ VCE = 5.0 V
1.2
0.6
1k
500
VCE , COLLECTOR VOLTAGE (VOLTS)
qV, TEMPERATURE COEFFICIENT (mV/° C)
1.0
0
100 ms
1.0 s
200
TC = 25°C
TA = 25°C
100
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPSA28
VALID FOR DUTY CYCLE v 10%
MPSA29
50
20
10
TA = 25°C
1.4
0.8
2.0
1.0
VBE(S) @ IC/IB = 1.0 k
1.6
1.0
2.0
5.0
10
20
50
100
5.0
VCE = 5.0 V
TA = 25°C
f = 100 MHz
2.0
1.0
0.5
0.2
0.1
0.3 0.5
1.0
2.0
5.0
10
20
50
100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 5. Active Region − Safe Operating Area
Figure 6. High Frequency Current Gain
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3
200 300
MPSA28, MPSA29
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MPSA28/D
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