NZL5V6AXV3T1 Series Preferred Devices Dual Common Anode ESD Protection Diodes SC−89 Package http://onsemi.com PIN 1. CATHODE 2. CATHODE 3. ANODE 1 3 2 MARKING DIAGRAM Specification Features: • SC−89 Package Allows Either Two Separate Unidirectional • • • • Configurations or a Single Bidirectional Configuration ESD Rating of Class N (exceeding 16 kV) per the Human Body Model Meets IEC61000−4−2 Level 4 Low Leakage < 5.0 mA These are Pb−Free Devices 3 Lx SC−89 CASE 463C STYLE 4 1 M These dual monolithic silicon ESD protection diodes are intended for use in voltage− and ESD−sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. G G 2 L = Device Code x = Specific Device M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Mechanical Characteristics: CASE: Void-free, Transfer-molded, Thermosetting Plastic Epoxy Meets UL 94, V−0 LEAD FINISH: 100% Matte Sn (Tin) ORDERING INFORMATION MOUNTING POSITION: Any Package Shipping † NZL5V6AXV3T1 SC−89* 3000/Tape & Reel NZL5V6AXV3T1G SC−89* 3000/Tape & Reel NZL6V8AXV3T1 NZL6V8AXV3T1G SC−89* SC−89* 3000/Tape & Reel 3000/Tape & Reel NZL6V8AXV3T3G SC−89* 10000/Tape & Reel NZL7V5AXV3T1 SC−89* 3000/Tape & Reel NZL7V5AXV3T1G SC−89* 3000/Tape & Reel Device QUALIFIED MAX REFLOW TEMPERATURE: 260°C Device Meets MSL 1 Requirements †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *This package is inherently Pb−Free. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2007 February, 2007 − Rev. 5 1 Publication Order Number: NZL5V6AXV3T1/D NZL5V6AXV3T1 Series MAXIMUM RATINGS Symbol Value Unit Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25°C Derate above 25°C Rating °PD° 240 1.9 °mW° mW/°C Thermal Resistance Junction to Ambient RqJA 525 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C TL 260 °C 10 kV Lead Solder Temperature − Maximum (10 Second Duration) IEC61000−4−2 (Contact) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 board with minimum recommended mounting pad. *Other voltages may be available upon request. ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol VRWM IR IF Parameter Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VBR VC VBR VRWM IT Test Current IF Forward Current VF Forward Voltage @ IF V IR VF IT Breakdown Voltage @ IT IPP Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max @ IF = 10 mA for all types) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) Breakdown Voltage IR @ VRWM VBR (Note 2) (V) Surge @ IzT VC (V) @ IPP = 1.0 A† VC (V) @ Max IPP† Max IPP (A)† Ppk (W)† Device Device Marking VRWM V mA Min Nom Max mA Typ Max NZL5V6AXV3T1 L0 3.0 5.0 5.32 5.6 5.88 5.0 7.0 10.1 4.8 50 NZL6V8AXV3T1 L2 4.5 1.0 6.46 6.8 7.14 5.0 7.9 11.9 6.7 73 NZL6V8AXV3T3 L2 4.5 1.0 6.46 6.8 7.14 5.0 7.9 11.9 6.7 73 NZL7V5AXV3T1 L3 5.0 1.0 7.12 7.5 7.88 5.0 8.8 13.5 5.7 75 2. VBR measured at pulse test current IT at an ambient temperature of 25°C. † Surge current waveform per Figure 5. http://onsemi.com 2 Typ NZL5V6AXV3T1 Series 9.0 250 200 7V5 8.0 IR (nA) BREAKDOWN VOLTAGE (VOLTS) (VBR @ IT) TYPICAL CHARACTERISTICS 6V8 7.0 150 5V6 100 6.0 6V8 5V6 5.0 −55 −5 50 + 45 + 95 TEMPERATURE (°C) 7V5 0 −55 + 145 −5 Figure 1. Typical Breakdown Voltage versus Temperature 300 PD, POWER DISSIPATION (mW) 45 40 35 30 5V6 25 6V8 7V5 20 15 10 5 0 0.4 0.8 1.2 1.6 250 200 150 100 FR−5 BOARD 50 0 2.0 VOLTAGE (V) 50 75 100 125 TEMPERATURE (°C) Figure 3. Typical Capacitance versus Bias Voltage 0 25 Figure 4. Steady State Power Derating Curve (Upper curve for each part is unidirectional mode, lower curve is bidirectional mode) 100 % OF PEAK PULSE CURRENT CAPACITANCE (pF) + 145 Figure 2. Typical Leakage Current versus Temperature 50 0 + 45 + 95 TEMPERATURE (°C) tr 90 PEAK VALUE IRSM @ 8 ms PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 60 t, TIME (ms) Figure 5. 8 X 20 ms Pulse Waveform http://onsemi.com 3 80 150 175 NZL5V6AXV3T1 Series Figure 6. Positive 8 kV contact per IEC 6100−4−2 − NZL6V8AXV3T1G Figure 7. Negative 8 kV contact per IEC 6100−4−2 − NZL6V8AXV3T1G http://onsemi.com 4 NZL5V6AXV3T1 Series TYPICAL COMMON ANODE APPLICATIONS A dual junction common anode design in an SC−89 package protects two separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of TVS applications are illustrated below. A KEYBOARD TERMINAL PRINTER ETC. B C I/O D FUNCTIONAL DECODER GND NZLxxxAXV3T1 Figure 8. Computer Interface Protection VDD VGG ADDRESS BUS RAM ROM DATA BUS CPU I/O NZLxxxAXV3T1 CLOCK CONTROL BUS GND NZLxxxAXV3T1 Figure 9. Microprocessor Protection http://onsemi.com 5 NZL5V6AXV3T1 Series PACKAGE DIMENSIONS SC−89, 3−LEAD CASE 463C−03 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C−01 OBSOLETE, NEW STANDARD 463C−02. A −X− 3 1 2 B −Y− S K DIM A B C D G H J K L M N S G 2 PL D 0.08 (0.003) M 3 PL X Y N M C MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 _ −−− −−− 10 _ 1.50 1.60 1.70 INCHES NOM MAX 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 BSC 0.021 REF 0.004 0.006 0.008 0.012 0.016 0.020 0.043 REF −−− −−− 10 _ −−− −−− 10 _ 0.059 0.063 0.067 MIN 0.059 0.030 0.024 0.009 J −T− STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE SEATING PLANE SOLDERING FOOTPRINT H H L G RECOMMENDED PATTERN OF SOLDER PADS ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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