NSC CD4512BC 8-channel buffered data selector Datasheet

CD4512BM/CD4512BC 8-Channel Buffered Data Selector
General Description
Features
The CD4512BM/CD4512BC buffered 8-channel data selector is a complementary MOS (CMOS) circuit constructed
with N- and P-channel enhancement mode transistors. This
data selector is primarily used as a digital signal multiplexer
selecting 1 of 8 inputs and routing the signal to a TRISTATEÉ output. A high level at the Inhibit input forces a low
level at the output. A high level at the Output Enable (OE)
input forces the output into the TRI-STATE condition. Low
levels at both the Inhibit and (OE) inputs allow normal operation.
Y
Y
Y
Y
Y
Wide supply voltage range
High noise immunity
TRI-STATE output
Low quiescent power dissipation
3.0V to 15V
0.45 VDD (typ.)
0.25 mW/package
(typ.) @ VCC e 5.0V
Plug-in replacement for Motorola MC14512
Connection Diagram and Truth Table
Dual-In-Line Package
Order Number CD4512B
TL/F/5993 – 1
Top View
Address Inputs
Control Inputs
Output
C
B
A
Inhibit
OE
Z
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
j
j
j
j
j
j
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
1
X0
X1
X2
X3
X4
X5
X6
X7
0
Hi-Z
j
j e Don’t care
Hi-Z e TRI-STATE condition
Xn e Data at input n
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.
C1995 National Semiconductor Corporation
TL/F/5993
RRD-B30M105/Printed in U. S. A.
CD4512BM/CD4512BC 8-Channel Buffered Data Selector
February 1988
Absolute Maximum Ratings (Notes 1 & 2)
Recommended Operating
Conditions (Note 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage (VDD)
b 0.5 to a 18 VDC
Input Voltage (VIN)
Storage Temperature Range (TS)
Power Dissipation (PD)
Dual-In-Line
Small Outline
Lead Temperature, (TL)
(Soldering, 10 seconds)
b 0.5 to VDD a 0.5 VDC
b 65§ C to a 150§ C
DC Supply Voltage (VDD)
3.0 to 15 VDC
Input Voltage (VIN)
Operating Temperature Range (TA)
CD4512BM
CD4512BC
0 to VDD VDC
b 55§ C to a 125§ C
b 40§ C to a 85§ C
700 mW
500 mW
260§ C
DC Electrical Characteristics CD4512BM (Note 2)
Symbol
Parameter
b 55§ C
Conditions
Min
a 25§ C
Max
Min
a 125§ C
Typ
Max
Min
Units
Max
IDD
Quiescent Device
Current
VDD e 5V, VIN e VDD or VSS
VDD e 10V, VIN e VDD or VSS
VDD e 15V, VIN e VDD or VSS
5.0
10
20
0.005
0.010
0.015
5.0
10
20
150
300
600
mA
mA
mA
VOL
Low Level
Output Voltage
VDD e 5V
VDD e 10V
VDD e 15V
0.05
0.05
0.05
0
0
0
0.05
0.05
0.05
0.05
0.05
0.05
V
V
V
VOH
High Level
Output Voltage
VDD e 5V
VDD e 10V
VDD e 15V
VIL
Low Level
Input Voltage
VDD e 5V, VO e 0.5V
VDD e 10V, VO e 1.0V
VDD e 15V, VO e 1.5V
VIH
High Level
Input Voltage
VDD e 5V, VO e 4.5V
VDD e 10V, VO e 9.0V
VDD e 15V, VO e 13.5V
3.5
7.0
11.0
3.5
7.0
11.0
2.75
5.50
8.25
3.5
7.0
11.0
V
V
V
IOL
Low Level Output
Current (Note 3)
VDD e 5V, VO e 0.4V
VDD e 10V, VO e 0.5V
VDD e 15V, VO e 1.5V
0.64
1.6
4.2
0.51
1.3
3.4
0.78
2.0
7.8
0.36
0.9
2.4
mA
mA
mA
IOH
High Level Output
Current (Note 3)
VDD e 5V, VO e 4.6V
VDD e 10V, VO e 9.5V
VDD e 15V, VO e 13.5V
b 0.25
b 0.62
b 1.8
b 0.2
b 0.5
b 1.5
b 0.14
b 0.35
b 1.1
mA
mA
mA
IIN
Input Current
VDD e 15V, VIN e 0V
VDD e 15V, VIN e 15V
IOZ
TRI-STATE
Output Current
(
(l
lIOLl k 1 mA
IOHl k 1 mA
4.95
9.95
14.95
4.95
9.95
14.95
1.5
3.0
4.0
VDD e 15V, VO e 0V
VDD e 15V, VO e 15V
5.0
10.0
15.0
2.25
4.50
6.75
4.95
9.95
14.95
1.5
3.0
4.0
V
V
V
1.5
3.0
4.0
V
V
V
b 0.1
b 10 b 5
b 0.1
b 1.0
0.1
10b5
0.1
1.0
mA
mA
g 0.1
b 10 b 5
g 0.1
g 3.0
mA
DC Electrical Characteristics CD4512BC (Note 2)
Symbol
Parameter
b 40§ C
Conditions
Min
IDD
Quiescent Device
Current
VDD e 5V, VIN e VDD or VSS
VDD e 10V, VIN e VDD or VSS
VDD e 15V, VIN e VDD or VSS
VOL
Low Level
Output Voltage
VDD e 5V
VDD e 10V
VDD e 15V
VOH
High Level
Output Voltage
VDD e 5V
VDD e 10V
VDD e 15V
VIL
Low Level
Input Voltage
VDD e 5V, VO e 0.5V
VDD e 10V, VO e 1.0V
VDD e 15V, VO e 1.5V
(
(l
lIOLl k 1 mA
Max
20
40
80
0.005
0.010
0.015
20
40
80
150
300
600
mA
mA
mA
0.05
0.05
0.05
0
0
0
0.05
0.05
0.05
0.05
0.05
0.05
V
V
V
4.95
9.95
14.95
5.0
10.0
15.0
2.25
4.50
6.75
Min
Units
Max
1.5
3.0
4.0
2
a 85§ C
Typ
4.95
9.95
14.95
IOHl k 1 mA
a 25§ C
Min
Max
4.95
9.95
14.95
1.5
3.0
4.0
V
V
V
1.5
3.0
4.0
V
V
V
DC Electrical Characteristics CD4512BC (Note 2) (Continued)
Symbol
Parameter
b 40§ C
Conditions
Min
a 25§ C
Max
Min
Typ
a 85§ C
Max
Min
Units
Max
VIH
High Level
Input Voltage
VDD e 5V, VO e 4.5V
VDD e 10V, VO e 9.0V
VDD e 15V, VO e 13.5V
3.5
7.0
11.0
3.5
7.0
11.0
2.75
5.50
8.25
3.5
7.0
11.0
V
V
V
IOL
Low Level Output
Current
(Note 3)
VDD e 5V, VO e 0.4V
VDD e 10V, VO e 0.5V
VDD e 15V, VO e 1.5V
0.52
1.3
3.6
0.44
1.1
3.4
0.78
2.0
7.8
0.36
0.9
2.4
mA
mA
mA
IOH
High Level Output
Current
(Note 3)
VDD e 5V, VO e 4.6V
VDD e 10V, VO e 9.5
VDD e 15V, VO e 13.5V
b 0.2
b 0.5
b 1.4
b 0.16
b 0.4
b 1.2
b 0.12
b 0.3
b 1.0
mA
mA
mA
IIN
Input Current
VDD e 15V, VIN e 0V
VDD e 15V, VIN e 15V
IOZ
TRI-STATE
Output Current
VDD e 15V, VO e 0V
VDD e 15V, VO e 15V
b 0.3
b 10 b 5
b 0.3
b 1.0
0.3
10b5
0.3
1.0
mA
mA
g 1.0
g 10 b 5
g 1.0
g 7.5
mA
AC Electrical Characteristics* TA e 25§ C, tr e tf e 20 ns, CL e 50 pF
Symbol
Parameter
CD4512BM
Conditions
Min
CD4512BC
Typ
Max
Min
Units
Typ
Max
tPHL
Propagation Delay
High-to-Low Level
VDD e 5V
VDD e 10V
VDD e 15V
225
75
57
500
175
130
225
75
57
750
200
150
ns
ns
ns
tPLH
Propagation Delay
Low-to-High Level
VDD e 5V
VDD e 10V
VDD e 15V
225
75
57
500
175
130
225
75
57
750
200
150
ns
ns
ns
tTHL, tTLH
Transition Time
VDD e 5V
VDD e 10V
VDD e 15V
70
35
25
200
100
80
70
35
25
200
100
80
ns
ns
ns
tPHZ, tPLZ
Propagation Delay into
TRI-STATE from Logic Level
VDD e 5V
VDD e 10V
VDD e 15V
50
25
19
125
75
60
50
25
19
125
75
60
ns
ns
ns
tPZH, tPZL
Propagation Delay to Logic
Level from TRI-STATE
VDD e 5V
VDD e 10V
VDD e 15V
50
25
19
125
75
60
50
25
19
125
75
60
ns
ns
ns
CIN
Input Capacitance
(Note 4)
7.5
15
7.5
15
pF
COUT
TRI-STATE Output
Capacitance
(Note 4)
7.5
15
7.5
15
pF
CPD
Power Dissipation Capacity
(Note 5)
150
150
pF
*AC Parameters are guaranteed by DC correlated testing.
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The tables of ‘‘Recommended Operating Conditions’’ and ‘‘Electrical Characteristics’’ provide conditions for actual device
operation.
Note 2: VSS e 0V unless otherwise specified.
Note 3: IOH and IOL are tested one output at a time.
Note 4: Capacitance guaranteed by periodic testing.
Note 5: CPD determines the no load AC power of any CMOS device. For complete explanation, see 54C/74C Family Characteristics Application Note, AN-90.
3
Logic Diagram
TL/F/5993 – 2
Typical Application
Serial Data Routing Interface
TL/F/5993 – 3
4
AC Test Circuit and Switching Time Waveforms
TL/F/5993 – 5
TL/F/5993 – 4
Input Connections for tr, tf, tPLH, tPHL
Test
Inhibit
A
X0
1
2
3
PG
GND
GND
GND
PG
GND
VDD
VDD
PG
TRI-STATE AC Test Circuit and Switching Time Waveforms
TL/F/5993 – 7
TL/F/5993 – 6
Switch Positions for TRI-STATE Test
Test
S1
S2
S3
S4
tPHZ Open Closed Closed Open
tPLZ Closed Open Open Closed
tPZL Closed Open Open Closed
tPZH Open Closed Closed Open
5
CD4512BM/CD4512BC 8-Channel Buffered Data Selector
Physical Dimensions inches (millimeters)
Ceramic Dual-In-Line Package (J)
Order Number CD4512BMJ or CD4512BCJ
NS Package Number J16A
Molded Dual-In-Line Package (N)
Order Number CD4512BMN or CD4512BCN
NS Package Number N16E
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