IXYS IXGH20N120 Igbt Datasheet

IGBT
IXGH 20N120 VCES
IXGT 20N120 IC25
VCE(sat)
tfi(typ)
= 1200 V
= 40 A
= 2.5 V
= 380 ns
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1200
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
1200
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
40
A
IC90
TC = 90°C
20
A
ICM
TC = 25°C, 1 ms
80
A
ICM = 40
A
SSOA
VGE = 15 V, TVJ = 125°C, RG = 47 Ω
(RBSOA)
Clamped inductive load
PC
TC = 25°C
W
-55 ... +150
°C
150
°C
Tstg
-55 ... +150
°C
300
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
Weight
TO-247
TO-268
DS
TO-268 (IXGT)
G
150
TJM
Mounting torque (TO-247)
G
@ 0.8 VCES
TJ
Md
TO-247 (IXGH)
°C
260
1.13/10 Nm/lb.in.
E
C (TAB)
Features
•International
standard packages
JEDEC TO-247 and TO-268
•High current handling capability
•MOS Gate turn-on
- drive simplicity
6
5
g
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Min.
BVCES
IC = 1 mA, VGE = 0 V
1200
VGE(th)
IC = 250 µA, VCE = VGE
ICES
VCE = VCES
TJ = 25°C
250
µA
VGE = 0 V
TJ = 125°C
1
mA
±100
nA
2.5
V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = IC90, VGE = 15 V
© 2002 IXYS All rights reserved
Characteristic Values
Typ.
Max.
V
2.5
5.0
2.0
V
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
• Capacitor discharge
Advantages
• Easy to mount with one screw
• Reduces assembly time and cost
• High power density
DS98966 (11/02)
IXGH 20N120
IXGT 20N120
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
Characteristic Values
Min. Typ. Max.
IC = IC90; VCE = 10 V,
12
16
TO-247
TO-247 Outline
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
1750
pF
90
pF
31
pF
90
A
63
nC
13
nC
26
nC
28
ns
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
IC(ON)
VGE = 10V, VCE = 10V
Qg
Qge
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
Inductive load, TJ = 25°°C
tri
IC
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
= IC90, VGE = 15 V
20
VCE = 800 V, RG = Roff = 47 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
800
ns
380
700
ns
6.5
10.5
mJ
30
ns
27
ns
0.90
mJ
700
ns
550
ns
9.5
mJ
Inductive load, TJ = 125°°C
IC
= IC90, VGE = 15 V
VCE = 800 V, RG = Roff = 47 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
RthJC
RthCK
ns
400
0.83
TO-247
0.25
Dim.
Millimeter
Min.
Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
K/W
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
TO-268 Outline
K/W
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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