MMBV3102LT1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features http://onsemi.com • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio • Pb−Free Package is Available 3 Cathode 1 Anode MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 Vdc Forward Current IF 200 mAdc Device Dissipation @ TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Junction Temperature TJ +125 °C Storage Temperature Range Tstg −55 to +150 °C 3 1 2 SOT−23 (TO−236) CASE 318 STYLE 8 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM M4CM G G 1 M4C = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMBV3102LT1 SOT−23 3,000 / Tape & Reel MMBV3102LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 3 1 Publication Order Number: MMBV3102LT1/D MMBV3102LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 30 − − Vdc IR − − 0.1 mAdc TCC − 300 − ppm/°C Reverse Breakdown Voltage (IR = 10 mAdc) Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz CR, Capacitance Ratio C3/C25 f = 1.0 MHz Min Nom Max Min Min Typ 20 22 25 200 4.5 4.8 MMBV3102LT1 TYPICAL CHARACTERISTICS 20 40 Q, FIGURE OF MERIT (x 1000) CT , DIODE CAPACITANCE (pF) 36 32 28 24 20 16 12 f = 1.0 MHz TA = 25°C 8.0 1.0 0.5 2.0 3.0 10 5.0 1.0 0 3.0 6.0 9.0 12 15 18 21 24 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance Figure 2. Figure of Merit C T, DIODE CAPACITANCE (NORMALIZED) I R , REVERSE CURRENT (nA) 3.0 2.0 0.3 0.2 20 30 100 10 VR = 20 Vdc 1.0 0.1 0.01 0.001 −60 5.0 0.5 4.0 0 0.3 TA = 25°C f = 50 MHz 10 −20 0 +20 +60 +100 1.03 VR = 3.0 Vdc f = 1.0 MHz 1.02 1.01 1.00 0.99 0.98 0.97 −50 −25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 3. Leakage Current Figure 4. Diode Capacitance NOTES ON TESTING AND SPECIFICATIONS 1. CR is the ratio of CT measured at 3.0 Vdc divided by CT measured at 25 Vdc. http://onsemi.com 2 30 1.04 0.96 −75 +140 27 +100 +125 MMBV3102LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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