MAC9D, MAC9M, MAC9N Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State Current Rating of 8.0 Amperes RMS at 100°C • Uniform Gate Trigger Currents in Three Quadrants • High Immunity to dv/dt — 500 V/µs minimum at 125°C • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating di/dt — 6.5 A/ms minimum at 125°C • Device Marking: Logo, Device Type, e.g., MAC9D, Date Code http://onsemi.com TRIACS 8 AMPERES RMS 400 thru 800 VOLTS MT2 MT1 G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off–State Voltage(1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC9D MAC9M MAC9N VDRM, VRRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 100°C) IT(RMS) 8.0 Amps ITSM 80 Amps Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Volts 4 400 600 800 1 2 3 I2t 26 A2sec TO–220AB CASE 221A STYLE 4 PGM 16 Watts PIN ASSIGNMENT PG(AV) 0.35 Watt TJ – 40 to +125 °C Tstg – 40 to +150 °C 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Device Package Shipping MAC9D TO220AB 50 Units/Rail MAC9M TO220AB 50 Units/Rail MAC9N TO220AB 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 1999 February, 2000 – Rev. 2 1 Publication Order Number: MAC9/D MAC9D, MAC9M, MAC9N THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction to Case — Junction to Ambient Symbol Value Unit RθJC RθJA 2.2 62.5 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit — — — — 0.01 2.0 — 1.2 1.6 10 10 10 16 18 22 50 50 50 — 30 50 — — 20 30 50 80 0.5 0.5 0.5 0.69 0.77 0.72 1.5 1.5 1.5 0.2 — — (di/dt)c 6.5 — — A/ms dv/dt 500 — — V/µs OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 125°C IDRM, IRRM mA ON CHARACTERISTICS Peak On-State Voltage* (ITM = ± 11 A Peak) VTM Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) IGT Holding Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA) IH Latching Current (VD = 24 V, IG = 50 mA) MT2(+), G(+); MT2(–), G(–) MT2(+), G(–) IL Gate Trigger Voltage (VD = 12 V, RL = 100 Ω) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) VGT Gate Non–Trigger Voltage (VD = 12 V, RL = 100 Ω, TJ = 125°C) MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) VGD Volts mA mA mA Volts Volts DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current; See Figure 10. (VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/µs, Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) CL = 10 µF LL = 40 mH Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) *Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 MAC9D, MAC9M, MAC9N Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM IDRM Peak Forward Blocking Current VRRM IRRM VTM IH VTM Peak Repetitive Forward Off State Voltage Quadrant 1 MainTerminal 2 + on state IH IRRM at VRRM Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage off state IH Holding Current Quadrant 3 VTM MainTerminal 2 – Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 Quadrant I (+) IGT GATE (–) IGT GATE MT1 MT1 REF REF IGT – + IGT (–) MT2 (–) MT2 Quadrant III Quadrant IV (+) IGT GATE (–) IGT GATE MT1 MT1 REF REF – MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in–phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 + Voltage IDRM at VDRM MAC9D, MAC9M, MAC9N 125 12 PAV, AVERAGE POWER (WATTS) TC, CASE TEMPERATURE (°C) DC 120 α = 120, 90, 60, 30° 115 α = 180° 110 DC 105 100 0 1 2 3 4 5 6 IT(RMS), RMS ON-STATE CURRENT (AMP) 7 10 180° 8 6 60° 4 90° α = 30° 2 0 8 120° 0 1 100 TYPICAL AT TJ = 25°C MAXIMUM @ TJ = 125°C I T, INSTANTANEOUS ON-STATE CURRENT (AMP) 7 8 Figure 2. On-State Power Dissipation r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 1. RMS Current Derating 2 3 4 5 6 IT(RMS), ON-STATE CURRENT (AMP) 10 1 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1 · 104 1000 Figure 4. Thermal Response MAXIMUM @ TJ = 25°C 40 1 I H, HOLDING CURRENT (mA) 35 30 MT2 POSITIVE 25 20 15 MT2 NEGATIVE 10 0.1 0 0.5 3.5 4.5 1 1.5 2 2.5 3 4 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 5 – 50 5 Figure 3. On-State Characteristics – 30 – 10 10 30 50 70 90 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Holding Current Variation http://onsemi.com 4 110 130 MAC9D, MAC9M, MAC9N VGT, GATE TRIGGER VOLTAGE (VOLT) IGT, GATE TRIGGER CURRENT (mA) 100 Q2 Q3 Q1 10 1 – 50 – 30 – 10 30 70 10 50 90 TJ, JUNCTION TEMPERATURE (°C) 110 130 1 0.95 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 0.45 0.4 – 50 Q3 Q1 Q2 – 30 5000 110 130 100 (dv/dt) c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/µ s) 4.5K 4K 3.5K MT2 NEGATIVE 3K 2.5K 2K 1.5K 1K MT2 POSITIVE 500 0 10 70 30 50 90 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Gate Trigger Voltage Variation 1 10 100 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) TJ = 125°C 100°C tw VDRM f= 1 2 tw 6f I (di/dt)c = TM 1000 15 20 25 30 35 40 45 50 55 60 (di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 8. Critical Rate of Rise of Off-State Voltage (Exponential) Figure 9. Critical Rate of Rise of Commutating Voltage LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC CHARGE 75°C 10 1 10 1000 1N4007 MEASURE I TRIGGER CHARGE CONTROL NON-POLAR CL TRIGGER CONTROL dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s) Figure 6. Gate Trigger Current Variation – 10 – + 1N914 51 W 200 V MT2 MT1 G Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c http://onsemi.com 5 MAC9D, MAC9M, MAC9N PACKAGE DIMENSIONS TO–220AB CASE 221A–09 ISSUE Z –T– SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 4: PIN 1. 2. 3. 4. http://onsemi.com 6 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 MAC9D, MAC9M, MAC9N Notes http://onsemi.com 7 MAC9D, MAC9M, MAC9N ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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